Optoelectronic semiconductor chip
View Patent ↗An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1 b . The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.
1. An optoelectronic semiconductor chip comprising:
a semiconductor body of semiconductor material;
a p-contact layer; and
an n-contact layer,
wherein:
the semiconductor body comprises an active layer intended for generating radiation,
the semiconductor body comprises a p-side and an n-side, between which the active layer is arranged,
the p-contact layer is capable of electrically contacting the p-side of the semiconductor body,
the n-contact layer is capable of electrically contacting the n-side of the semiconductor body,
the n-contact layer contains a TCO layer and a mirror layer,
the TCO layer is arranged between the n-side of the semiconductor body and the mirror layer, and
the n-contact layer is not in direct contact with the semiconductor body.
2. The optoelectronic semiconductor chip according to claim 1 , wherein the n-contact layer passes to the n-side by means of a hole through the p-contact layer and through the p-side of the semiconductor body.
3. The optoelectronic semiconductor chip according to claim 2 , wherein the TCO layer is arranged directly on the hole.
4. The optoelectronic semiconductor chip according to claim 2 , wherein the hole is lined with an electrically insulating layer, the electrically insulating layer directly adjoining the TCO layer.
5. The optoelectronic semiconductor chip according to claim 1 , wherein the TCO layer forms an ohmic contact on the n-side.
6. The optoelectronic semiconductor chip according to claim 1 , wherein the mirror layer contains silver.
7. The optoelectronic semiconductor chip according to claim 1 , wherein the p-contact layer and the n-contact layer are arranged on the same side of the semiconductor body.
8. The optoelectronic semiconductor chip according to claim 7 , wherein:
the p-contact layer directly adjoins the p-side of the semiconductor body,
the n-contact layer is arranged on the side of the p-contact layer remote from the semiconductor body, and
an electrically insulating layer is arranged between the p-contact layer and the n-contact layer.
9. The optoelectronic semiconductor chip according to claim 1 , wherein the TCO layer contains ZnO or ITO.
10. The optoelectronic semiconductor chip according to claim 1 , wherein the TCO layer exhibits a thickness of greater than 0.5 nm.
11. The optoelectronic semiconductor chip according to claim 1 , wherein the TCO layer exhibits a thickness in a range of between 15 nm and 25 nm inclusive.
12. The optoelectronic semiconductor chip according to claim 1 , wherein the semiconductor body comprises oblique side faces.
13. The optoelectronic semiconductor chip according to claim 1 , wherein the semiconductor body is based on GaN.