Manufacturing apparatus and method for making silicon nanowires on carbon based powders for use in batteries

1. A method of manufacturing a carbon-based silicon nanowire composite, the method comprising:

providing a carbon-based substrate having catalyst nanoparticles deposited on the surface of the carbon-based substrate, wherein the carbon-based substrate comprises at least one of natural graphite particles or synthetic graphite particles, and the catalyst nanoparticles comprise Copper, or a Copper oxide;

loading the carbon-based substrate with the catalyst nanoparticles deposited thereon into a plurality of tumbler reactors;

inserting sequentially the plurality of tumbler reactors containing the carbon-based substrate with the catalyst nanoparticles deposited thereon into a LPCVD system comprising a sequence of N active zones separated from each other through N−1 buffer zones, said active zones comprising at least one heating zone, at least one reaction zone, and at least one cooling zone, and wherein the temperature in two or more of said zones is controlled independently;

heating the carbon-based substrate with the catalyst nanoparticles deposited thereon in one or more of the plurality of tumbler reactors positioned in the at least one heating zone until the carbon-based substrate reaches a specified temperature;

growing silicon-comprising nanowires on carbon-based substrate from the catalyst nanoparticles in one or more of the plurality of tumbler reactors positioned in the at least one reaction zone to form a carbon-based silicon nanowire composite via a Vapor-Solid-Solid (VSS) synthesis technique, wherein the growing comprises mixing the carbon-based substrate while injecting one or more process gases uniformly into one or more of the plurality of tumbler reactors via injection ports positioned along an injection member and wherein temperature and concentration of the one or more process gases into one or more of the plurality of tumbler reactors are controlled by computer with automatic software for the production; and

moving periodically the position of the plurality of tumbler reactors in the LPCVD system via the buffer zones under controlled conditions of pressure and temperature so that the at least one reaction zone is continuously growing silicon-comprising nanowires except for the periodic transition of the plurality of tumbler reactors from one active zone to the next.

2. The method of claim 1 wherein the carbon-based silicon nanowire composite has a silicon nanowire density of at least 12% silicon to carbon weight ratio.

3. The method of claim 1 wherein the carbon-based silicon nanowire composite has a silicon nanowire density between 16% and 32% silicon to carbon weight ratio.

4. The method of claim 1 wherein the one or more process gases comprise a silicon comprising precursor and the conversion of said silicon comprising precursor into silicon nanowires is greater than 90%.

5. The method of claim 1 wherein loading further comprises: loading a weight quantity greater than 10 kg of the carbon-based substrate with the catalyst nanoparticles deposited thereon into each of the plurality of tumbler reactors.

6. The method of claim 1 wherein loading further comprises: loading a weight quantity greater than 100 kg of the carbon-based substrate with the catalyst nanoparticles deposited thereon into each of the plurality of tumbler reactors.

7. A method of manufacturing a carbon-based silicon nanowire composite, the method comprising:

providing a carbon-based substrate having catalyst nanoparticles deposited on the surface of the carbon-based substrate, wherein the carbon-based substrate comprises at least one of natural graphite particles or synthetic graphite particles, and the catalyst nanoparticles comprise Copper, or a Copper oxide;

loading continuously the carbon-based substrate into an elongated chamber through a graphite injector, wherein the elongated chamber comprises an auger and a gas injection member, the auger and the gas injection member extending for at least a portion of the length of the elongated chamber, and wherein the elongated chamber comprises a sequence of one or more pre-heating zones, reaction zones and cooling zones;

heating the carbon-based substrate in the one or more pre-heating zones up to a specified temperature;

growing silicon-comprising nanowires on the carbon-based substrate from the catalyst nanoparticles in the one or more reaction zones to form a carbon-based silicon nanowires composite via a Vapor-Solid-Solid (VSS) synthesis technique, wherein the growing comprises mixing the carbon-based substrate while injecting one or more process gases uniformly via injection ports positioned along a section of the gas injection member extending in the one or more reaction zones and wherein temperature and concentration of the one or more process gases in the elongated chamber are controlled by computer with automatic software for the production;

cooling the carbon-based silicon composite in the one or more cooling zones; and

pushing the carbon-based substrate through the sequence of the one or more pre-heating zones, reaction zones and cooling zones by continuously rotating the auger, said zones being separated by isolation curtains to at least partially isolate the zones.

8. The method of claim 7 wherein the one or more process gases comprise a silicon comprising precursor and the conversion of said silicon comprising precursor into silicon nanowires is greater than 90%.

9. The method of claim 1 , wherein the mixing comprises rotating one or more of the plurality of tumbler reactors positioned in the at least one reaction zone while injecting the one or more process gases into one or more of the plurality of tumbler reactors during the nanowire growing process.

10. The method of claim 1 further comprising: scraping the inner walls of one or more of the plurality of tumbler reactors in the LPCVD system to minimize the buildup of carbon-based substrate on said inner walls.

11. The method of claim 7 further comprising: scraping the inner walls of the elongated chamber in one or more of the zones to minimize the buildup of carbon-based substrate on said inner walls.

12. The method of claim 7 further comprising: controlling the travel time of the carbon-based substrate through a zone by varying the pitch of the section of the auger extending in that zone.

13. The method of claim 7 , wherein the formed carbon-based silicon nanowire composite has a silicon nanowire density of at least 12% silicon to carbon weight ratio.

14. The method of claim 7 , wherein the formed carbon-based silicon nanowire composite has a silicon nanowire density between 16% and 32% silicon to carbon weight ratio.