Interconnect structures for a security application

1. A method comprising:

forming a sacrificial masking layer that includes a plurality of particles arranged with a first random distribution;

forming a first etch mask by selectively removing the particles from the sacrificial masking layer to define a first plurality of openings in the sacrificial masking layer that have a second random distribution identical to the first random distribution of the particles;

etching a first hardmask masked by the first etch mask to define a second plurality of openings arranged with a third random distribution identical to the second random distribution of the first plurality of openings;

etching a dielectric layer masked by the first hardmask to form a third plurality of openings in the dielectric layer that are arranged with a fourth random distribution identical to the third random distribution of the second plurality of openings; and

filling the third plurality of openings in the dielectric layer with a conductor to define a first plurality of conductive features.

2. The method of claim 1 further comprising:

after etching the first hardmask, removing the first etch mask;

etching the first hardmask using a second etch mask to form a pattern that includes a plurality of lines and a plurality of spaces arranged to alternate with the lines; and

forming a plurality of trenches in the dielectric layer based on the pattern when the dielectric layer is etched,

wherein the third plurality of openings in the dielectric layer are superimposed on the trenches in the dielectric layer.

3. The method of claim 2 further comprising

filling the trenches with the conductor to define a second plurality of conductive features,

wherein the first plurality of conductive features and the second plurality of conductive features are located in a metallization level, and at least one of the first plurality of conductive features connects a pair of the second plurality of conductive features to provide an electrical short.

4. The method of claim 3 further comprising:

applying a ramped voltage to the second plurality of conductive features to cause a change in the at least one of the first plurality of conductive features to provide the electrical short connecting the pair of the second plurality of conductive features.

5. The method of claim 2 further comprising

filling the plurality of trenches with the conductor to define a second plurality of conductive features,

wherein the first plurality of conductive features are located in a first metallization level and the second plurality of conductive features are located in a second metallization level, and at least one of the first plurality of conductive features connects one of the second plurality of conductive features with a third conductive feature in a third metallization level to provide an electrical short.

6. The method of claim 2 wherein the third plurality of openings are formed in the dielectric layer before the plurality of trenches are formed in the dielectric layer.

7. The method of claim 2 wherein the third plurality of openings and the plurality of trenches are concurrently formed in the dielectric layer.

8. A method comprising:

forming a sacrificial masking layer that includes a plurality of particles arranged with a first random distribution;

forming a first etch mask by selectively removing the sacrificial masking layer relative to the plurality of particles such that the plurality of particles provide the first etch mask;

etching a first hardmask masked by the first etch mask to recess a top surface of the first hardmask over areas not masked by the plurality of particles and define a plurality of regions of increased thickness in the first hardmask that are arranged with a second random distribution identical to the first random distribution;

etching a dielectric layer to form a plurality of openings in the dielectric layer that are arranged with a third random distribution identical to the second random distribution of the regions of increased thickness of the first hardmask; and

filling the plurality of openings in the dielectric layer with a conductor to define a first plurality of conductive features.

9. The method of claim 8 further comprising:

after the first hardmask is etched, removing the first etch mask;

forming a second hardmask surrounding the plurality of regions of increased thickness;

etching the second hardmask using a second etch mask to form a pattern that includes a plurality of lines and a plurality of spaces arranged to alternate with the lines; and

forming a plurality of trenches in the dielectric layer based on the pattern when the dielectric layer is etched,

wherein the plurality of openings in the dielectric layer are superimposed on the plurality of trenches in the dielectric layer.

10. The method of claim 9 further comprising

filling the plurality of trenches with the conductor to define a second plurality of conductive features,

wherein the first plurality of conductive features and the second plurality of conductive features are located in a metallization level, and at least one of the first plurality of conductive features connects a pair of the second plurality of conductive features to provide an electrical short.

11. The method of claim 10 further comprising:

applying a ramped voltage to the second plurality of conductive features to cause a change in the at least one of the first plurality of conductive features to provide the electrical short connecting the pair of the second plurality of conductive features.