Compositions and Methods Using Same for Carbon Doped Silicon Containing Films

1 ) A composition comprising:

(a) at least one silicon precursor compound having one Si—C—Si or two Si—C—Si linkages selected from the group consisting of 1,1,1,3,3,3-hexachloro-1,3-disilapropane, 1,1,1,3,3,3-hexachloro-2-methyl-1,3-disilapropane, 1,1,1,3,3,3-hexachloro-2,2-dimethyl-1,3-disilapropane, 1,1,1,3,3,3-hexachloro-2-ethyl-1,3-disilapropane, 1-chloro-1,3-disilacyclobutane, 1-bromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-1,3-disilacyclobutane, 1,3-dibromo-1,3-disilacyclobutane, 1,1,3-trichloro-1,3-disilacyclobutane, 1,1,3-tribromo-1,3-disilacyclobutane, 1,1,3,3-tetrabromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-dimethyl-1,3-disilacyclobutane, 1,3-bromo-1,3-dimethyl-1,3-disilacyclobutane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,1,3,3,5,5,5-octachloro-1,5-dimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-3,3-dimethyl-1,3,5-trisilapentane, 1,1,3,5,5,5-pentachloro-1,3,5-trimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-1,3,5-trisilapentane, 1,1,5,5-tetraachloro-1,3,5-trisilapentane; and;

(b) at least one solvent.

2 ) The composition of claim 1 where in the solvent comprises at least one member selected from the group consisting of ether, tertiary amine, siloxanes, alkyl hydrocarbon, aromatic hydrocarbon, and tertiary aminoether.

3 ) The composition of claim 1 wherein the difference between the boiling point of the silicon precursor and the boiling point of the solvent is about 40° C. or less.

4 ) The composition of claim 1 comprising less than 5 ppm of at least one metal ions selected from the group consisting of Al 3+ ions, Fe 2+ , Fe 3+ , Ni 2+ , and Cr 3+ .

5 ) The composition of claim 1 where in the solvent comprises at least one member selected from the group consisting of heptane, octane, nonane, decane, dodecane, cyclooctane, cyclononane, cyclodecane, toluene, and mesitylene.

6 ) A method for forming a carbon doped silicon oxide film having carbon content ranging from 15 at. % to 30 at. % via a thermal ALD process, the method comprising:

a) placing one or more substrates comprising a surface feature into a reactor;

b) heating to reactor to one or more temperatures ranging from ambient temperature to about 550° C. and optionally maintaining the reactor at a pressure of 100 torr or less;

c) introducing into the reactor at least one silicon precursor having two Si—C—Si linkages selected from the group consisting of 1-chloro-1,3-disilacyclobutane, 1-bromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-1,3-disilacyclobutane, 1,3-dibromo-1,3-disilacyclobutane, 1,1,3-trichloro-1,3-disilacyclobutane, 1,1,3-tribromo-1,3-disilacyclobutane, 1,1,3,3-tetrachloro-1,3-disilacyclobutane, 1,1,3,3-tetrabromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-dimethyl-1,3-disilacyclobutane, 1,3-bromo-1,3-dimethyl-1,3-disilacyclobutane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,1,3,3,5,5,5-octachloro-1,5-dimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-3,3-dimethyl-1,3,5-trisilapentane, 1,1,3,5,5,5-pentachloro-1,3,5-trimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-1,3,5-trisilapentane, 1,1,5,5-tetraachloro-1,3,5-trisilapentane;

d) purge with an inert gas;

e) providing a nitrogen source into the reactor to react with the surface to form a carbon doped silicon nitride film;

f) purge with inert gas to remove reaction by-products;

g) steps c to f are repeated to provide a desired thickness of carbon doped silicon nitride;

h) treating the resulting carbon doped silicon nitride film with an oxygen source at one or more temperatures ranging from about ambient temperature to 1000° C. or from about 100° to 400° C. to convert the carbon doped silicon nitride film into a carbon doped silicon oxide film; and

i) providing post-deposition exposing the carbon doped silicon oxide film to a plasma comprising hydrogen.

7 ) method of claim 6 wherein the silicon precursor comprises the composition of claim 1 .

8 ) A film formed according to the method of claim 6 having a k of less than about 4, a carbon content of at least about 10 at. %.

9 ) A film formed according to the method of claim 6 having an etch rate of at least 0.5 times less than thermal silicon oxide.

10 ) A film formed according to the method of claim 6 having an etch rate of at least 0.1 times less than thermal silicon oxide.

11 ) A film formed according to the method of claim 6 having an etch rate of at least 0.05 times less than thermal silicon oxide.

12 ) A film formed according to the method of claim 6 having an etch rate of at least 0.01 times less than thermal silicon oxide.

13 ) A film formed according to the method of claim 6 having less damage layer (50 Å or less) when exposing to oxygen ashing process.

14 ) A film formed according to the method of claim 6 having less damage layer (20 Å or less) when exposing to oxygen ashing process.

15 ) A film formed according to the method of claim 6 having less damage layer (10 Å or less) when exposing to oxygen ashing process.

16 ) A film formed according to the method of claim 6 having less damage layer (5 Å or less) when exposing to oxygen ashing process.

17 ) A stainless steel container housing the composition of claim 1 .

18 ) A method for forming a carbon doped silicon oxide film having carbon content ranging from 15 at % to 30 at. % via a thermal ALD process, the method comprising the method comprising:

a. placing one or more substrates comprising a surface feature into a reactor;

b. heating the reactor to one or more temperatures ranging from ambient temperature to about 150° C. and optionally maintaining the reactor at a pressure of 100 torr or less;

c. introducing into the reactor at least precursor having two Si—C—Si linkages selected from the group consisting of 1-chloro-1,3-disilacyclobutane, 1-bromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-1,3-disilacyclobutane, 1,3-dibromo-1,3-disilacyclobutane, 1,1,3-trichloro-1,3-disilacyclobutane, 1,1,3-tribromo-1,3-disilacyclobutane, 1,1,3,3-tetrachloro-1,3-disilacyclobutane, 1,1,3,3-tetrabromo-1,3-disilacyclobutane, 1,3-dichloro-1,3-dimethyl-1,3-disilacyclobutane, 1,3-bromo-1,3-dimethyl-1,3-disilacyclobutane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,1,3,3,5,5,5-octachloro-1,3,5-trisilapentane, 1,1,1,3,3,5,5,5-octachloro-1,5-dimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-3,3-dimethyl-1,3,5-trisilapentane, 1,1,3,5,5,5-pentachloro-1,3,5-trimethyl-1,3,5-trisilapentane, 1,1,1,5,5,5-hexachloro-1,3,5-trisilapentane, 1,1,5,5-tetraachloro-1,3,5-trisilapentane and a catalyst;

d. purge with an inert gas

e. providing vapors of water into the reactor to react with the precursor as well as a catalyst to form a carbon doped silicon oxide as-deposited film;

f. purge with inert gas to remove reaction by-products;

g. steps c to f are repeated to provide a desired thickness of carbon doped silicon oxide;

19 ) The method of claim 18 further comprising post-deposition treatment of the carbon doped silicon oxide film with a thermal anneal at temperatures from 300 to 700° C.

20 ) The method of claim 18 further comprising hydrogen plasma treatment of the carbon doped silicon oxide film with a plasma comprising hydrogen.