Method and apparatus for constant response from shape memory alloy

1. A system, comprising:

an actuator comprising a shape memory alloy;

actuator drive circuitry coupled to the shape memory alloy and configured to apply a current to the shape memory alloy;

measurement circuitry coupled to the shape memory alloy and configured to:

provide a first output to a processing system; and

provide, after providing the first output, a second output to the processing system; and

the processing system comprising circuitry coupled to the actuator drive circuitry and the measurement circuitry, and configured to:

determine a first resistance of the shape memory alloy using the first output;

determine, after determining the first resistance, a second resistance of the shape memory alloy using the second output;

perform a comparison between the first resistance and the second resistance to detect a resistance change;

based on the detected resistance change, detect that the shape memory alloy underwent at least a partial phase transition resulting in actuation of the actuator; and

cause the actuator drive circuitry to cease application of the current based on the detected partial phase transition.

2. The system of claim 1 , wherein:

the measurement circuitry comprises a voltage divider comprising the shape memory alloy and a sensing resistor,

the first output is based on a first voltage divider output and a first input voltage to the shape memory alloy, and

the second output is based on a second voltage divider output and a second input voltage to the shape memory alloy.

3. The system of claim 1 , wherein the resistance change is a detection that the second resistance differs from the first resistance by a pre-determined threshold.

4. The system of claim 3 , wherein the detection that the second resistance is different than the first resistance by a pre-determined threshold comprises a second detection that the second resistance is lower than the first resistance.

5. The system of claim 1 , wherein undergoing the partial phase transition causes a contraction of the shape memory alloy.

6. The input device of claim 5 , wherein the contraction causes a displacement of a portion of the actuator, the displacement causing a movement of the portion in a planar direction.

7. The system of claim 1 , wherein the processing system is further configured to detect, before the current is applied, that a force to an input surface coupled to the actuator exceeds a force threshold, and wherein the current is applied to the shape memory alloy in response to the detection that the force to the input surface exceeds the force threshold.

8. The system of claim 1 , wherein the processing system is further configured to:

detect, before the current is applied by the actuator drive circuitry, a user input, wherein the current is applied in response to the detection of the user input.

9. The system of claim 1 , wherein, the actuator drive circuitry comprises a capacitor and a transistor and is further configured to:

store charge in the capacitor; and

switch on the transistor to use the charge stored in the capacitor to apply the current to the shape memory alloy.

10. The system of claim 1 , wherein:

the processing system comprises an analog-to-digital converter (ADC), and

the measurement circuitry comprises a plurality of resistors coupled to an operational amplifier, the operational amplifier being configured to provide the first output and the second output to the ADC.

11. A method, comprising:

applying a current to a shape memory alloy of an actuator;

determining a first resistance of the shape memory alloy;

determining, after measuring the first resistance, a second resistance of the shape memory alloy;

performing a comparison between the first resistance and the second resistance to detect a resistance change;

based on the detected resistance change, detecting that the shape memory alloy underwent at least a partial phase transition resulting in actuation of the actuator; and

ceasing, based on the detected partial phase transition, application of the current to the shape memory alloy.

12. The method of claim 11 , wherein measuring the first resistance and measuring the second resistance comprises using a voltage divider with the shape memory alloy being a first voltage divider resistor and a sense resistor being a second voltage divider resistor.

13. The method of claim 11 , wherein the detecting the resistance change is a detection that the second resistance is different than the first resistance by a pre-determined threshold.

14. The method of claim 13 , wherein the detection that the second resistance is different than the first resistance by a pre-determined threshold comprises a detection that the second resistance is lower than the first resistance.

15. The method of claim 11 , wherein undergoing the partial phase transition causes a contraction of the shape memory alloy.

16. The method of claim 11 , further comprising:

detecting, before applying the current, a user input, wherein the current is applied in response to the detection of the user input.

17. The method of claim 11 , further comprising:

detecting, before applying the current, that a force applied to an input surface coupled to the actuator exceeds a force threshold, wherein the current is applied in response to the detection that the force applied to the input surface coupled to the actuator exceeds the force threshold.

18. The method of claim 11 , wherein applying a current to a shape memory alloy of the actuator comprises:

storing charge in a capacitor; and

switching on a transistor to use the charge stored in the capacitor for applying the current to the shape memory alloy.