Light-emitting semiconductor chip

1. A semiconductor chip comprising:

a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence comprises an n-conductive multilayer structure, a p-conductive semiconductor layer and an active region provided for generating radiation, and wherein the active region is disposed between the n-conductive multilayer structure and the p-conductive semiconductor layer;

wherein the n-conductive multilayer structure has a doping profile comprising exactly one doping peak; and

wherein the n-conductive multilayer structure comprises barrier layers and a quantum structure with a plurality of first quantum layers, wherein the first quantum layers of the plurality of first quantum layers are separated by the barrier layers, wherein the quantum structure comprises a low doped sub-region in which the first quantum layers and the barrier layers are low doped,

wherein the doping peak is disposed between the low doped sub-region and the active region, and

wherein the doping peak has a distance from the active region that is between 2 nm and 20 nm, inclusive.

2. The semiconductor chip according to claim 1 , wherein the doping peak directly adjoins the low doped sub-region.

3. The semiconductor chip according to claim 1 , wherein the active region comprises a plurality of second quantum layers, wherein the doping peak is arranged between a first quantum layer of the plurality of first quantum layers of the n-conductive multilayer structure that is closest to the active region and a second quantum layer of the plurality of second quantum layers of the active region that is closest to the n-conductive multilayer structure.

4. The semiconductor chip according to claim 3 , wherein a band gap of the first quantum layer is at least as large as a band gap of the second quantum layer.

5. The semiconductor chip according to claim 1 , wherein a first doping concentration in the doping peak is at least five times as high as a second doping concentration in the low doped sub-region of the n-conductive multilayer structure.

6. The semiconductor chip according to claim 1 , wherein a third doping concentration in the doping peak is at least 4*10 18 cm −3 , and wherein a fourth doping concentration in the low doped sub-region is, at most, 8*10 17 cm −3 .

7. The semiconductor chip according to claim 1 , wherein the doping peak has a vertical extent that is between 1 nm and 30 nm, inclusive.

8. The semiconductor chip according to claim 1 , wherein the doping peak has a vertical extent that is between 5 nm and 20 nm, inclusive.

9. The semiconductor chip according to claim 1 , wherein the doping profile comprises a first doping peak and a second doping peak, wherein at least one quantum layer of the plurality of first quantum layers is disposed between the first doping peak and the second doping peak.

10. The semiconductor chip according to claim 1 , wherein the active region is based on a nitride compound semiconductor material.

11. The semiconductor chip according to claim 1 , wherein a crystal structure of the n-conductive multilayer structure comprises V-shaped indentations.

12. The semiconductor chip according to claim 1 , wherein a growth substrate for the semiconductor layer sequence is removed from the semiconductor body.

13. A semiconductor chip comprising:

a semiconductor body with a semiconductor layer sequence, wherein the semiconductor layer sequence comprises an n-conductive multilayer structure, a p-conductive semiconductor layer and an active region provided for generating radiation, and wherein the active region is disposed between the n-conductive multilayer structure and the p-conductive semiconductor layer;

wherein the n-conductive multilayer structure has a doping profile comprising exactly one doping peak; and

wherein the n-conductive multilayer structure comprises barrier layers and a quantum structure with a plurality of first quantum layers, wherein the first quantum layers of the plurality of first quantum layers are separated by the barrier layers, wherein the quantum structure comprises a low doped sub-region in which the first quantum layers and the barrier layers are low doped,

wherein the doping peak is disposed between the low doped sub-region and the active region, and

wherein the doping peak has a distance from the active region that is between 2 nm and 20 nm, inclusive, and

wherein a crystal structure of the n-conductive multilayer structure comprises V-shaped indentations.