Apparatuses and methods for laser processing
A workpiece may be laser processed by a method that may include forming a contour line in the workpiece, and directing an infrared laser beam onto the workpiece along or near the contour line to separate the workpiece along the contour line. The contour line may include defects in the workpiece. The infrared laser beam may have a beam profile such that a greater distribution of cumulated energy from the infrared laser beam is located in areas adjacent to the contour line than directly on the contour line.
1. A method for laser processing a workpiece, the method comprising:
forming a contour line in the workpiece, the contour line comprising defects in the workpiece; and
directing an infrared laser beam onto the workpiece along or near the contour line to separate the workpiece along the contour line, wherein the infrared laser beam has an annular beam profile such that a greater distribution of cumulated energy from the infrared laser beam is located in areas adjacent to the contour line than directly on the contour line.
2. The method of claim 1 , wherein an outer diameter of the annular beam profile is from about 0.5 mm to about 20 mm.
3. The method of claim 2 , wherein an inner diameter of the annular beam profile is from about 5% to about 95% of the outer beam diameter.
4. The method of claim 1 , wherein a greater distribution of cumulated energy from the infrared laser beam is located in areas adjacent to the contour line on both sides of the contour line than directly on the contour line.
5. The method of claim 1 , wherein the infrared laser beam is centered on the contour line.
6. The method of claim 1 , wherein the infrared laser beam is produced by a carbon dioxide laser, a carbon monoxide laser, a solid state laser, a laser diode, or combinations thereof.
7. The method of claim 1 , wherein the workpiece comprises an alkaline earth boroaluminosilicate glass, sapphire, fused silica, or combinations thereof.
8. The method of claim 1 , wherein the infrared laser beam and the workpiece are translated relative to one another at a speed from about 1 mm/s to about 10 m/s.
9. The method of claim 1 , wherein the infrared laser beam has a power of from about 20 W to about 1000 W.
10. The method of claim 1 , wherein the workpiece has a CTE of less than or equal to about 5×10 −6 /K.
11. The method of claim 1 , wherein workpiece has a thickness of from about 50 microns to about 10 mm.
12. The method of claim 1 , wherein forming the contour line comprises:
focusing a pulsed laser beam into a pulsed laser beam focal line oriented along a beam propagation direction and directed into the workpiece, the pulsed laser beam focal line generating an induced absorption within the workpiece, and the induced absorption producing a line defect along the pulsed laser beam focal line within the workpiece;
translating the workpiece and the pulsed laser beam focal line relative to each other along the contour line, thereby laser forming a plurality of line defects along the contour line within the workpiece, wherein a spacing between adjacent line defects is from 1 microns to 30 microns; and
wherein the pulsed laser produces pulse bursts with from about 1 pulse per pulse burst to about 30 pulses per pulse burst and the pulse burst energy is from about 100 μJ to about 600 μJ per pulse burst.
13. The method of claim 12 , wherein the pulsed laser beam produces pulse bursts with from about 9 pulses per pulse burst to about 20 pulses per pulse burst, and the pulse burst energy is from about 300 gj per pulse burst to about 500 gj per pulse burst.
14. The method according to claim 12 , wherein:
the spacing between adjacent line defects is from about 7 microns to about 12 microns; and
the pulsed laser beam produces pulse bursts with from about 5 pulses per pulse burst to about 15 pulses per pulse burst, and the pulse burst energy is from about 400 pJ per pulse burst to about 600 micro Joules per pulse burst.
15. The method according to claim 12 , wherein the pulses of the pulse bursts have a duration of from about 1 picosecond to about 100 picoseconds.
16. The method according to claim 12 , wherein the pulse bursts have a repetition rate in a range of from about 10 kHz and about 3 MHz.
17. The method according to claim 12 , wherein the pulsed laser beam focal line has an average spot diameter in a range of from about 0.1 micron to about 10 microns.
18. A method for laser processing a workpiece, the method comprising:
focusing a pulsed laser beam into a pulsed laser beam focal line directed into the workpiece, the pulsed laser beam focal line producing a line defect within the workpiece;
translating the workpiece and the pulsed laser beam focal line relative to each other thereby laser forming a plurality of line defects along a contour line within the workpiece, wherein a spacing between adjacent line defects is from 5 microns to 15 microns; and
directing an infrared laser beam onto the workpiece along or near the contour line to separate the workpiece along the contour line, wherein the infrared laser beam has a beam profile such that a greater distribution of cumulated energy from the infrared laser beam is located in areas adjacent to the contour line on both sides of the contour line than directly on the contour line.
19. The method of claim 18 , wherein the infrared laser beam has an annular beam profile and is centered on the contour line.
20. The method of claim 18 , wherein the infrared laser beam is produced by a carbon dioxide laser, a carbon monoxide laser, a solid state laser, a laser diode, or combinations thereof.