Semiconductor device
View Patent ↗According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.
1. A semiconductor device comprising:
an insulating substrate;
a semiconductor layer on a layer above the insulating substrate;
a first electrode layer and a second electrode layer which are electrically connected to the semiconductor layer;
a third electrode layer including a gate electrode which at least partly overlaps the semiconductor layer;
a metal layer between the semiconductor layer and the insulating substrate which at least partly overlaps the semiconductor layer;
a first insulating film covering the metal layer;
a second insulating film on the third electrode layer; and
a fourth electrode layer on the second insulating film;
wherein the metal layer and the third electrode layer are electrically connected to each other via a contact hole in the first insulating film and via a side surface of the third electrode layer, and
the fourth electrode layer makes contact with an upper surface and the side surface of the third electrode layer.
2. The semiconductor device of claim 1 , wherein the first electrode layer, the second electrode layer, and the fourth electrode layer are all formed of the same material.
3. The semiconductor device of claim 1 , wherein the semiconductor layer is formed of an oxide semiconductor.
4. The semiconductor device of claim 1 , wherein the second insulating film covers the semiconductor layer.