IP Library Granted Patent US 9,929,299
Granted Patent B1
US 9,929,299 · App. 15/663,187 · Granted Mar 27, 2018

Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions

Inventor: Mohamed M. Hilali (San Ramon, CA)
Assignee: Zhejiang Kaiying New Materials Co., Ltd.
H01L31/0682H01L31/02363H01L31/035272H01L31/18H01L33/44
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Quick Facts
Patent No.
US 9,929,299
App. No.
15/663,187
Granted
Mar 27, 2018
Kind
B1
Abstract

Screen-printable metallization pastes for forming thin oxide tunnel junctions on the back-side surface of solar cells are disclosed. Interdigitated metal contacts can be deposited on the oxide tunnel junctions to provide all-back metal contact to a solar cell.

Claims (44)

1. A solar cell comprising:

a back surface comprising a first region and a second region;

a positively-charged silicon oxide layer overlying the first region;

a negatively-charged aluminum oxide layer overlying the second region;

a positive electrode grid overlying the positively-charged silicon oxide layer; and

a negative electrode grid overlying the negatively-charged aluminum oxide layer.

2. The solar cell of claim 1 ,

wherein the positively-charged silicon oxide layer and the negatively-charged aluminum oxide layer are interdigitated; and

wherein the positive electrode grid and the negative electrode grid are interdigitated.

3. The solar cell of claim 2 , wherein each of the positively-charged silicon oxide layer and the negatively-charged aluminum oxide layer are characterized by a thickness from 1 Å to 45 Å.

4. The solar cell of claim 2 , wherein each of the positive electrode grid and the negative electrode grid comprise copper particles, copper alloy particles, silver particles, silver alloy particles, or a combination of any of the foregoing.

5. The solar cell of claim 2 , wherein each of the positive electrode grid and the negative electrode grid comprise amorphous metal glass.

6. The solar cell of claim 2 , wherein the back surface comprises a back surface of a N-type silicon solar cell.

7. The solar cell of claim 2 , wherein the back surface comprises a back surface of a P-type silicon solar cell.

8. The solar cell of claim 2 , wherein each of the positive electrode grid and the negative electrode grid comprise silver particles, silver alloy particles, silver coated with a metallic glass, a silver alloy coated with a metallic glass, copper particles, copper alloy particles, copper coated with a metallic glass, a copper alloy coated with a metallic glass, or a combination of any of the foregoing.

9. The solar cell of claim 1 ,

wherein each of the positively-charged silicon oxide layer and the negatively-charged aluminum oxide layer are characterized by a thickness from 1 Å to 45 Å.

10. The solar cell of claim 9 , wherein,

the positively-charged silicon oxide layer and the negatively-charged aluminum oxide layer are interdigitated; and

the positive electrode grid and the negative electrode grid are interdigitated.

11. The solar cell of claim 9 , wherein each of the positive electrode grid and the negative electrode grid comprise copper particles, copper alloy particles, silver particles, silver alloy particles, or a combination of any of the foregoing.

12. The solar cell of claim 9 , wherein each of the positive electrode grid and the negative electrode grid comprise amorphous metal glass.

13. The solar cell of claim 9 , wherein the back surface comprises a back surface of a N-type silicon solar cell.

14. The solar cell of claim 9 , wherein the back surface comprises a back surface of a P-type silicon solar cell.

15. The solar cell of claim 9 , wherein each of the positive electrode grid and the negative electrode grid comprise silver particles, silver alloy particles, silver coated with a metallic glass, a silver alloy coated with a metallic glass, copper particles, copper alloy particles, copper coated with a metallic glass, a copper alloy coated with a metallic glass, or a combination of any of the foregoing.

16. The solar cell of claim 1 ,

wherein each of the positive electrode grid and the negative electrode grid comprise copper particles, copper alloy particles, silver particles, silver alloy particles, or a combination of any of the foregoing.

17. The solar cell of claim 16 , wherein,

the positively-charged silicon oxide layer and the negatively-charged aluminum oxide layer are interdigitated; and

the positive electrode grid and the negative electrode grid are interdigitated.

18. The solar cell of claim 16 , wherein each of the positively-charged silicon oxide layer and the negatively-charged aluminum oxide layer are characterized by a thickness from 1 Å to 45 Å.

19. The solar cell of claim 16 , wherein each of the positive electrode grid and the negative electrode grid comprise amorphous metal glass.

20. The solar cell of claim 16 , wherein the back surface comprises a back surface of a N-type silicon solar cell.

21. The solar cell of claim 16 , wherein the back surface comprises a back surface of a P-type silicon solar cell.

22. The solar cell of claim 16 , wherein each of the positive electrode grid and the negative electrode grid comprise silver particles, silver alloy particles, silver coated with a metallic glass, a silver alloy coated with a metallic glass, copper particles, copper alloy particles, copper coated with a metallic glass, a copper alloy coated with a metallic glass, or a combination of any of the foregoing.

23. The solar cell of claim 1 , wherein each of the positive electrode grid and the negative electrode grid comprise amorphous metal glass.

24. The solar cell of claim 23 , wherein,

the positively-charged silicon oxide layer and the negatively-charged aluminum oxide layer are interdigitated; and

the positive electrode grid and the negative electrode grid are interdigitated.

25. The solar cell of claim 23 , wherein each of the positively-charged silicon oxide layer and the negatively-charged aluminum oxide layer are characterized by a thickness from 1 Å to 45 Å.

26. The solar cell of claim 23 , wherein each of the positive electrode grid and the negative electrode grid comprise copper particles, copper alloy particles, silver particles, silver alloy particles, or a combination of any of the foregoing.

27. The solar cell of claim 23 , wherein the back surface comprises a back surface of a N-type silicon solar cell.

28. The solar cell of claim 23 , wherein the back surface comprises a back surface of a P-type silicon solar cell.

29. The solar cell of claim 23 , wherein each of the positive electrode grid and the negative electrode grid comprise silver particles, silver alloy particles, silver coated with a metallic glass, a silver alloy coated with a metallic glass, copper particles, copper alloy particles, copper coated with a metallic glass, a copper alloy coated with a metallic glass, or a combination of any of the foregoing.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 28, 2017
From: HILALI, MOHAMED M.
To: ZHEJIANG KAIYING NEW MATERIALS CO., LTD.
Reel/Frame 043372/0313 →
Continuity (1)
Continuation PCTCN2016111035 · Dec 20, 2016