Sputter target and sputtering methods
The present disclosure concerns sputter targets and sputtering methods. In particular, sputter targets and methods of sputtering using conventional sputter targets as well as sputter targets described herein, for highly uniform sputter deposition, are described.
1. A sputter target assembly comprising:
(a) a backing plate with a planar surface;
(b) two or more sputter target sections comprising the same sputter target material, the sections assembled adjacent to each other directly on the planar surface of the backing plate; and
(c) a continuous gap between any neighboring sections of the two or more sputter target sections, wherein the continuous gap allows orthogonal line of sight to the backing plate,
wherein the planar surface of the backing plate comprises a coating of material directly on the planar surface of the backing plate and having an emissivity that approximates the emissivity of the sputter target material of the neighboring sections of the two or more sputter target sections.
2. The sputter target assembly of claim 1 , wherein the continuous gap is not aligned with the path of a substrate past the sputter target assembly during sputter deposition of the sputter target material onto the substrate.
3. The sputter target assembly of claim 1 , wherein the edges of the neighboring sections forming the continuous gap are straight edges forming supplementary angles.
4. The sputter target assembly of claim 3 , wherein the bottom end of one continuous gap and the top end of a neighboring continuous gap are configured along a line, wherein the line is parallel with the path of the substrate past the sputter target assembly during sputter deposition of the target material onto the substrate.
5. The sputter target assembly of claim 1 , wherein the continuous gap is curved.
6. The sputter target assembly of claim 1 , wherein the continuous gap comprises one or more angled portions.
7. The sputter target assembly of claim 1 , wherein the sputter target material comprises a nickel tungsten alloy or a sintered nickel tungsten composite.
8. The sputter target assembly of claim 1 , wherein the sputter target material comprises W, Mo, V, Ti, Ni, Cu, Al, Si, Ta, Nb and alloys, oxides or nitrides thereof.
9. The sputter target assembly of claim 1 , wherein the sputter target material comprises indium tin oxide, aluminum zinc oxide or indium zinc oxide.
10. The sputter target assembly of claim 1 , wherein the sputter target material comprises lithium.
11. The sputter target assembly of claim 1 , wherein the sputter target material is lithium.
12. The sputter target assembly of claim 5 , wherein the continuous gap is entirely curved.
13. The sputter target assembly of claim 1 , wherein the coating is directly on the planar surface in the continuous gap between any neighboring sections of the two or more sputter target sections.
14. The sputter target assembly of claim 13 , wherein the coating is directly on the planar surface only in the continuous gap between any neighboring sections of the two or more sputter target sections.
15. The sputter target assembly of claim 1 , wherein the coating has substantially the same emissivity as the sputter target material of the neighboring sections of the two or more sputter target sections.