Semiconductor laser with integrated phototransistor
The present invention relates to a semiconductor laser for use in an optical module for measuring distances and/or movements, using the self-mixing effect. The semiconductor laser comprises a layer structure including an active region ( 3 ) embedded between two layer sequences ( 1, 2 ) and further comprises a photodetector arranged to measure an intensity of an optical field resonating in said laser. The photodetector is a phototransistor composed of an emitter layer (e), a collector layer (c) and a base layer (b), each of which being a bulk layer and forming part of one of said layer sequences ( 1, 2 ). With the proposed semiconductor laser an optical module based on this laser can be manufactured more easily, at lower costs and in a smaller size than known modules.
1. A vertical cavity surface emitter laser (VCSEL) comprising:
a first distributed Bragg reflector (DBR),
a second DBR, and
an active region situated between the first and second DBRs,
wherein each of the first and second DBRs includes multiple DBR layers,
wherein each DBR layer comprises a material having different optical properties than a material of an adjacent DBR layer,
wherein each DBR layer of the first DBR is a bulk layer that does not include a quantum well and has a refractive index that differs from an adjacent DBR layer, and
wherein a single interior DBR layer of the DBR includes an n-doped layer and a p-doped layer, such that the interior DBR layer and a corresponding adjacent DBR layer form a phototransistor within the first DBR.
2. The VCSEL of claim 1 , wherein the corresponding adjacent DBR layer is n-doped, thereby forming an NPN structure that forms the phototransistor within the first DBR.
3. The VCSEL of claim 1 , wherein a DBR layer of the first DBR closest to the active region forms an emitter of the phototransistor.
4. The VCSEL of claim 1 , wherein one of the n-doped layer and the p-doped layer forms a base of the phototransistor, and an opposite-doped one of the p-doped layer and the n-doped layer forms an emitter of the phototransistor.
5. The VCSEL of claim 4 , wherein a bandgap of the base is substantially equal to the bandgap of the emitter.
6. The VCSEL of claim 4 , wherein, in operation, an optical intensity of the VCSEL at the emitter is substantially lower than the optical intensity at the base.
7. The VCSEL of claim 4 , wherein the corresponding adjacent DBR layer forms a collector of the phototransistor.
8. The VCSEL of claim 7 , wherein a bandgap of the collector is substantially higher than a bandgap of the base of the phototransistor.
9. The VCSEL of claim 1 , wherein the interior DBR layer comprises GaAs.
10. The VCSEL of claim 9 , wherein the corresponding adjacent DBR layer comprises AlAs.
11. The VCSEL of claim 1 , wherein a thickness of each DBR layer in the first DBR is substantially equal to a quarter wavelength of light emitted from the active region.
12. The VCSEL of claim 11 , wherein a thickness of the n-doped layer and the p-doped layer in the interior DBR layer are substantially equal.
13. The VCSEL of claim 1 , wherein the refractive index of the corresponding adjacent DBR layer is substantially lower than the refractive index of the interior DBR layer.
14. A vertical cavity surface emitter laser (VCSEL) comprising:
a first distributed Bragg reflector (DBR),
a second DBR, and
an active region situated between the first and second DBRs,
wherein each of the first and second DBRs includes multiple DBR layers,
wherein each DBR layer comprises a material having different optical properties than a material of an adjacent DBR layer,
wherein each of the DBR layers of the first DBR is a bulk layer that does not include a quantum well and has a refractive index that differs from an adjacent DBR layer,
wherein at least one single DBR layer of the DBR layers in the first DBR is doped differently from a corresponding adjacent DBR layer in the first DBR; and
wherein the at least one single DBR layer of the DBR layers includes an n-doped layer and a p-doped layer, so that the at least one single DBR layer of the DBR layers and the corresponding adjacent DBR layer form a phototransistor within the first DBR.
15. The VCSEL of claim 14 , wherein the at least one layer of the first DBR includes less Al than the corresponding adjacent DBR layer.
16. The VCSEL of claim 14 , wherein the at least one DBR layer of the first DBR comprises GaAs.
17. The VCSEL of claim 16 , wherein the corresponding adjacent DBR layer comprises AlGaAs.
18. The VCSEL of claim 14 , wherein the doping of the at least one DBR layer of the first DBR forms a base and an emitter of the phototransistor, the corresponding adjacent DBR layer forms a collector of the phototransistor, and a bandgap of the collector is substantially higher than a bandgap of the base and a bandgap of the emitter.
19. A method of forming a vertical cavity surface emitter laser (VCSEL) with an embedded phototransistor comprising:
forming a first distributed Bragg reflector (DBR),
forming a second DBR, and
forming an active region between the first DBR and the second DBR;
wherein forming each of the first and second DBRs includes forming multiple DBR layers,
wherein each DBR layer comprises a material having different optical properties than a material of an adjacent DBR layer,
wherein each DBR layer of the first DBR is a bulk layer that does not include a quantum well and has a refractive index that differs from an adjacent DBR layer,
wherein forming the first DBR includes doping each DBR layer of the first DBR,
wherein the doping of one single DBR layer of the DBR layers differs from the doping of an adjacent DBR layer, and
wherein the one single DBR layer of the DBR layers comprises an n-doped layer and a p-doped layer, so that the one of the DBR layers and a corresponding adjacent DBR layer form the embedded phototransistor within the first DBR.
20. The method of claim 19 , wherein a DBR layer of the first DBR closest to the active region forms an emitter of the phototransistor.