Single-shot encapsulation
A semiconductor device includes a semiconductor wafer. A plurality of pillar bumps is formed over the semiconductor wafer. A solder is deposited over the pillar bumps. The semiconductor wafer is singulated into a plurality of semiconductor die after forming the pillar bumps while the semiconductor wafer is on a carrier. An encapsulant is deposited around the semiconductor die and pillar bumps while the semiconductor die remains on the carrier. The encapsulant covers an active surface of the semiconductor die between the pillar bumps.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
forming a plurality of pillar bumps over the semiconductor wafer;
depositing a solder over the pillar bumps with the pillar bumps between the solder and the semiconductor wafer;
disposing the semiconductor wafer over a carrier with the pillar bumps oriented toward the carrier;
singulating the semiconductor wafer into a plurality of semiconductor die after forming the pillar bumps and while the semiconductor wafer remains over the carrier; and
depositing an encapsulant around the semiconductor die and pillar bumps after singulating the semiconductor wafer and while the semiconductor wafer remains over the carrier.
2. The method of claim 1 , wherein depositing the encapsulant includes covering an active surface of the semiconductor die between the pillar bumps.
3. The method of claim 1 , wherein the solder contacts the carrier while depositing the encapsulant.
4. The method of claim 1 , further including forming a trench between the semiconductor die prior to singulating the semiconductor wafer.
5. The method of claim 4 , wherein singulating the semiconductor wafer includes backgrinding the semiconductor wafer to the trench.
6. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
forming a plurality of pillar bumps over the semiconductor wafer;
disposing the semiconductor wafer over a carrier after forming the plurality of pillar bumps with the pillar bumps oriented toward the carrier;
singulating the semiconductor wafer into a plurality of semiconductor die while the semiconductor wafer remains over the carrier; and
depositing an encapsulant around the semiconductor die.
7. The method of claim 6 , further including cutting through the encapsulant to separate the semiconductor die, wherein a plurality of semiconductor die remain connected by the encapsulant.
8. The method of claim 6 , further including:
transfer-mounting the semiconductor die from the carrier to a second carrier after singulating the semiconductor wafer; and
depositing the encapsulant around the semiconductor die while the semiconductor die are on the second carrier.
9. The method of claim 6 , further including depositing a solder over the pillar bumps prior to depositing the encapsulant.
10. The method of claim 9 , further including:
disposing the semiconductor die over a substrate with the encapsulant contacting the substrate; and
reflowing the solder onto a conductive layer of the substrate.
11. The method of claim 6 , further including:
forming a polyimide layer over the semiconductor die; and
forming the pillar bumps over the polyimide layer.
12. The method of claim 6 , wherein singulating the semiconductor wafer includes:
backgrinding the semiconductor wafer; and
removing a portion of the semiconductor wafer between the semiconductor die after backgrinding the semiconductor wafer.
13. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
forming a plurality of pillar bumps over the semiconductor wafer;
forming a plurality of solder caps over the plurality of pillar bumps with a solder cap over each respective pillar bump;
singulating the semiconductor wafer into a plurality of semiconductor die after forming the pillar bumps, wherein singulating creates a gap comprising a first distance between a first semiconductor die and a second semiconductor die of the plurality of semiconductor die; and
depositing an encapsulant over the semiconductor die, wherein a thickness of encapsulant between the first semiconductor die and second semiconductor die is equal to the first distance.
14. The method of claim 13 , wherein the solder caps include lead-free solder.
15. The method of claim 13 , further including transfer-mounting the semiconductor die after singulating the semiconductor wafer and prior to depositing the encapsulant.
16. The method of claim 13 , further including cutting through the encapsulant between the semiconductor die.
17. The method of claim 16 , wherein a plurality of semiconductor die remain packaged together after cutting through the encapsulant.
18. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
forming a plurality of bumps over a first surface of the semiconductor wafer;
disposing the semiconductor wafer on a carrier after forming the plurality of bumps with the plurality of bumps between the semiconductor wafer and carrier;
singulating the semiconductor wafer into a plurality of semiconductor die with the semiconductor wafer on the carrier; and
depositing an encapsulant to cover the first surface of the semiconductor wafer and a second surface of the semiconductor wafer opposite the first surface, wherein the bumps are exposed from the encapsulant.
19. The method of claim 18 , wherein the bumps include solder caps.
20. The method of claim 19 , wherein the solder caps include lead-free solder.
21. The method of claim 18 , further including transfer-mounting the semiconductor die prior to depositing the encapsulant.
22. The method of claim 18 , further including cutting through the encapsulant to separate the semiconductor die into a plurality of semiconductor packages.
23. The method of claim 22 , further including leaving a plurality of semiconductor die together in a semiconductor package of the plurality of semiconductor packages when cutting through the encapsulant.