Method of manufacturing a semiconductor device
Provided is a method of manufacturing a semiconductor device having a photodiode that has a shallow p-n junction and thus achieves high sensitivity to an ultraviolet ray, in which an oxide containing impurities at high concentration is deposited on the surface of the silicon substrate, and thereafter a diffusion region is formed to have a shallow junction by performing thermal diffusion of a rapid temperature change, with the use of a high-speed temperature rising and falling apparatus without using ion implantation into the silicon substrate.
1. A method of manufacturing a semiconductor device having a photodiode of a p-n junction in a surface of a silicon substrate, the method comprising:
removing an oxide film formed on the surface of the silicon substrate;
depositing a first oxide containing phosphorus on the surface of the silicon substrate;
forming the first oxide on a surface region of the silicon substrate;
forming a first n-type diffusion region by performing a first annealing on the first oxide at a high temperature of 1,000° C. or more for 3 minutes or less, to thereby thermally diffuse the phosphorus contained in the first oxide into the surface of the silicon substrate;
depositing a second oxide containing phosphorus directly in contact with the surface first n-type diffusion region in the silicon substrate after removing the first oxide;
forming the second oxide so that the second oxide is connected to the first n-type diffusion region; and
forming a second n-type diffusion region by performing a second annealing on the second oxide to connect to the first n-type diffusion region, the second annealing at a temperature equal to or higher than that of the first annealing for a time equal to or shorter than that of the first annealing, to thereby thermally diffuse the phosphorus contained in the second oxide into the surface of the silicon substrate.
2. A method of manufacturing a semiconductor device according to claim 1 , wherein each of the first oxide and the second oxide comprises a silicon oxide.
3. A method of manufacturing a semiconductor device according to claim 1 , wherein the first n-type diffusion region and the second n-type diffusion region overlap each other to form a cathode region of the photodiode.
4. A method of manufacturing a semiconductor device according to claim 1 , wherein the first oxide contains the phosphorus at 10 19 cm −3 or more, and the second oxide contains the phosphorus at 5×10 19 cm −3 or more.
5. A method of manufacturing a semiconductor device according to claim 1 , wherein the temperature of the second annealing is equal to or higher than 1,000° C. and the time for the second annealing is equal to or shorter than 10 seconds.
6. A method of manufacturing a semiconductor device having a photodiode of a p-n junction in a surface of a silicon substrate, the method comprising:
forming an oxide film on an entire surface of the silicon substrate;
exposing a surface area of the silicon substrate, by selectively removing the oxide film in a photodiode forming region;
depositing a first oxide containing phosphorus on the entire surface of the silicon substrate so that the first oxide is directly in contact with the exposed surface of the silicon in the photodiode forming region;
forming a first n-type diffusion region by performing first annealing on the first oxide at a high temperature of 1,000° C. or more for 3 minutes or less, to thereby thermally diffuse the phosphorus contained in the first oxide into the surface area of the silicon substrate;
exposing the surface area of the silicon substrate, in the photodiode forming region by selectively removing the first oxide;
depositing a second oxide containing phosphorus on the entire surface of the silicon substrate so that the second oxide is directly in contact with the exposed surface area in the photodiode forming region; and
forming a second n-type diffusion region on a surface of the first n-type diffusion region by performing a second annealing on the second oxide at a temperature equal to or higher than that of the first annealing for a time equal to or shorter than that of the first annealing, to thereby thermally diffuse the phosphorus contained in the second oxide into the surface area of the silicon substrate.
7. A method of manufacturing a semiconductor device according to claim 6 , wherein each of the first oxide and the second oxide comprises a silicon oxide.
8. A method of manufacturing a semiconductor device according to claim 6 , wherein the first n-type diffusion region and the second n-type diffusion region overlap each other to form a cathode region of the photodiode.
9. A method of manufacturing a semiconductor device according to claim 6 , wherein the first oxide contains the phosphorus at 10 19 cm −3 or more, and the second oxide contains the phosphorus at 5×10 19 cm −3 or more.
10. A method of manufacturing a semiconductor device according to claim 6 , wherein the temperature of the second annealing is equal to or higher than 1,000° C. and the time for the second annealing is equal to or shorter than 10 seconds.
11. A method of manufacturing a semiconductor device having a photodiode of a p-n junction in a surface of a silicon substrate, the method comprising:
forming an oxide film on an entire surface of the silicon substrate;
exposing a surface area of the silicon substrate, by selectively removing the oxide film in a photodiode forming region;
depositing a first oxide containing phosphorus on the entire surface of the silicon substrate so that the first oxide is directly in contact with the exposed surface area in the photodiode forming region;
forming a first n-type diffusion region by performing first annealing on the first oxide at a high temperature of 1,000° C. or more for 3 minutes or less, to thereby thermally diffuse the phosphorus contained in the first oxide into the surface area of the silicon substrate;
introducing phosphorus into the first oxide by ion implantation; and
forming a second n-type diffusion region on a surface of the first n-type diffusion region by performing a second annealing on the first oxide, into which the phosphorus is introduced, at a temperature equal to or higher than that of the first annealing for a time equal to or shorter than that of the first annealing, to thereby thermally diffuse the phosphorus contained in the first oxide into the surface area of the silicon substrate.
12. A method of manufacturing a semiconductor device according to claim 11 , wherein the temperature of the second annealing is equal to or higher than 1,000° C. and the time for the second annealing is equal to or shorter than 10 seconds.