Driving device for insulated gate semiconductor element, and driving system for the same element
View Patent ↗A driving device includes: a driving circuit operating with a single power supply in accordance with a driving signal; a first parallel circuit formed of a first capacitor and a first zener diode connected together in parallel, and having a first end connected to an output terminal of the driving circuit; a series circuit connected between a second end of the first parallel circuit and a ground of the driving circuit, and formed of a diode and a second parallel circuit (of a second capacitor and a second zener diode) connected to each other in series; and a resistor is connected between the second end of the first parallel circuit and the ground of the driving circuit. A voltage across the resistor is used as an output voltage for driving the insulated gate semiconductor element. A voltage across the first capacitor is superimposed negative-wise on the output voltage.
1. A driving device for an insulated gate semiconductor element driving the insulated gate semiconductor element in accordance with a given driving signal, the driving device comprising:
a driving circuit operating with a single power supply in accordance with the driving signal;
a first parallel circuit formed of a first capacitor and a first zener diode, and having a first end connected to an output terminal of the driving circuit;
a series circuit connected between a second end of the first parallel circuit and a ground of the driving circuit, and formed of a diode and a second parallel circuit connected to each other in series, the second parallel circuit being formed of a second capacitor and a second zener diode; and
a resistor connected between the second end of the first parallel circuit and the ground of the driving circuit,
wherein a voltage across the resistor is used as an output voltage for driving the insulated gate semiconductor element, and
wherein a voltage across the first capacitor is superimposed negative-wise on the output voltage for generating a negative voltage of the output voltage.
2. The driving device for the insulated gate semiconductor element according to claim 1 , wherein the output terminal of the driving circuit is connected to a cathode of the first zener diode, and an anode of the first zener diode is connected to an anode of the diode, and
wherein a cathode of the diode is connected to a cathode of the second zener diode, and an anode of the second zener diode is connected to the ground of the driving circuit.
3. The driving device for the insulated gate semiconductor element according to claim 1 , wherein the output terminal of the driving circuit is connected to a cathode of the first zener diode, an anode of the first zener diode is connected to a cathode of the second zener diode, and
wherein an anode of the second zener diode is connected to an anode of the diode, and a cathode of the diode is connected to the ground of the driving circuit.
4. A driving system for an insulated gate semiconductor element, the driving system comprising:
a first driving device for the insulated gate semiconductor element that is the driving device as defined in claim 1 ;
a second driving device for the insulated gate semiconductor element that is the driving device as defined in claim 1 ;
a third capacitor connected between both terminals of a power supply of a driving circuit of the second driving device, the driving circuit working as an input-output isolation type driving circuit;
a first single power supply, viz. the single power supply for driving a driving circuit of the first driving device and the driving circuit of the second driving device; and
a second diode connected between the first single power supply and the driving circuit of the second driving device,
wherein the driving circuit of the first driving device and the driving circuit of the second driving device are driven in different time periods from each other by a pair of driving signals having reverse polarities to each other.
5. The driving system for the insulated gate semiconductor element according to claim 4 , further comprising a second single power supply between an output terminal of the second driving device and a ground of the driving circuit of the first driving device via an insulated gate semiconductor element to be driven by the second driving device.