IP Library Granted Patent US 10,263,595
Granted Patent B2
US 10,263,595 · App. 15/673,613 · Granted Apr 16, 2019

Method and apparatus for adapting a variable impedance network

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Quick Facts
Patent No.
US 10,263,595
App. No.
15/673,613
Granted
Apr 16, 2019
Kind
B2
Abstract

The present disclosure may include, for example, a tunable capacitor having a decoder for generating a plurality of control signals, and an array of tunable switched capacitors comprising a plurality of fixed capacitors coupled to a plurality of switches. The plurality of switches can be controlled by the plurality of control signals to manage a tunable range of reactance of the array of tunable switched capacitors. Additionally, the array of tunable switched capacitors is adapted to have non-uniform quality (Q) factors. Additional embodiments are disclosed.

Claims (33)

1. A device comprising:

a tunable array of switched capacitors comprising a plurality of capacitors coupled to a plurality of switches, each of the plurality of capacitors having a fixed capacitance value, each of the plurality of switches having a resistance associated therewith;

wherein the capacitance values of the plurality of capacitors comprise a non-binary array, and

wherein the array of switched capacitors is adapted to have non-uniform quality (Q) factors.

2. The device of claim 1 , wherein each combination of a capacitor of the plurality of capacitors and a switch of the plurality of switches has a quality (Q) factor, and the array corresponds to a plurality of combinations having different Q factors.

3. The device of claim 1 , wherein a first capacitor and a second capacitor of the array of switched capacitors each have a capacitance value equal to a largest capacitance value of the non-binary array.

4. The device of claim 1 ,

wherein the device comprises a matching network operating in a frequency range having a low-frequency portion and a high-frequency portion,

wherein a first capacitor having a capacitance value equal to a largest capacitance value of the array is connected to a first resistance of a first switch to maintain a target quality (Q) factor for the matching network while operating in the low-frequency portion of the frequency range, and is not connected to the first resistance while the matching network is operating in the high-frequency portion of the frequency range.

5. The device of claim 1 , wherein at least a portion of the array of switched capacitors is contained on a die.

6. The device of claim 1 , wherein the resistance associated with at least one switch of the plurality of switches comprises a parasitic resistance.

7. The device of claim 1 , wherein at least one switch of the plurality of switches comprises a semiconductor switch.

8. The device of claim 1 , wherein at least one switch of the plurality of switches comprises a micro-electro-mechanical systems (MEMS) switch.

9. A device comprising:

a tunable array of switched capacitors comprising a plurality of capacitors coupled to a plurality of switches, each of the plurality of capacitors having a fixed capacitance value, each of the plurality of switches having a resistance associated therewith,

wherein the array of switched capacitors is adapted to have non-uniform quality (Q) factors, the array of switched capacitors thereby adapted to maintain a Q factor for the array over a predetermined portion of a frequency range of the device.

10. The device of claim 9 , wherein each combination of a capacitor of the plurality of capacitors and a switch of the plurality of switches has a Q factor, and the array corresponds to a plurality of combinations having different Q factors.

11. The device of claim 9 ,

wherein the device comprises a matching network operating in the frequency range, the frequency range having a low-frequency portion and a high-frequency portion,

wherein a first capacitor having a capacitance value equal to a largest capacitance value of the array is connected to a first resistance of a first switch to maintain a target quality (Q) factor for the matching network while operating in the low-frequency portion of the frequency range, and is not connected to the first resistance while the matching network is operating in the high-frequency portion of the frequency range.

12. The device of claim 9 , wherein at least a portion of the array of switched capacitors is contained on a die.

13. The device of claim 9 , wherein the resistance associated with at least one switch of the plurality of switches comprises a parasitic resistance.

14. The device of claim 9 , wherein at least one switch of the plurality of switches comprises a semiconductor switch.

15. The device of claim 9 , wherein at least one switch of the plurality of switches comprises a micro-electro-mechanical systems (MEMS) switch.

16. A device comprising:

a tunable array of switched reactive elements comprising a plurality of reactive elements coupled to a plurality of switches, each of the plurality of reactive elements having a fixed reactance value, each of the plurality of switches having a resistance associated therewith,

wherein the array of switched reactive elements is adapted to have non-uniform quality (Q) factors, the array of switched reactive elements thereby adapted to maintain a Q factor for the array over a predetermined portion of a frequency range of the device.

17. The device of claim 16 , wherein at least one switch of the plurality of switches comprises a semiconductor switch.

18. The device of claim 16 , wherein at least one switch of the plurality of switches comprises a micro-electro-mechanical systems (MEMS) switch.

19. The device of claim 16 , wherein the array comprises a plurality of capacitors coupled to the plurality of switches, wherein each of the plurality of switches has a parasitic capacitance, and wherein the resistance associated with at least one switch of the plurality of switches comprises a parasitic resistance.

20. The device of claim 19 ,

wherein the device comprises a matching network operating in the frequency range, the frequency range having a low-frequency portion and a high-frequency portion,

wherein a first capacitor having a capacitance value equal to a largest capacitance value of the plurality of capacitors is connected to a first resistance of a first switch to maintain a target Q factor for the matching network while operating in the low-frequency portion of the frequency range, and is not connected to the first resistance while the matching network is operating in the high-frequency portion of the frequency range.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 5, 2020
From: BLACKBERRY LIMITED
To: NXP USA, INC.
Reel/Frame 052095/0443 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2017
From: MANSSEN, KEITH R.; GREENE, MATTHEW R.
To: PARATEK MICROWAVE, INC.
Reel/Frame 043741/0665 →
CHANGE OF NAME Recorded Sep 29, 2017
From: PARATEK MICROWAVE, INC.
To: RESEARCH IN MOTION RF, INC.
Reel/Frame 044070/0312 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2017
From: RESEARCH IN MOTION RF, INC.
To: RESEARCH IN MOTION CORPORATION
Reel/Frame 044070/0346 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2017
From: RESEARCH IN MOTION CORPORATION
To: BLACKBERRY LIMITED
Reel/Frame 044070/0491 →