Organic light-emitting device having multi-layered electron blocking layer and P-doped layer
An organic light-emitting device includes a first electrode layer; a hole injection layer on the first electrode layer; a hole transport layer on the hole injection layer; an electron blocking layer on the hole transport layer, and including a plurality of layers; a light-emitting layer on the electron blocking layer; an electron transport layer on the light-emitting layer; an electron injection layer on the electron transport layer; and a second electrode layer on the electron transport layer, wherein the electron blocking layer has a highest occupied molecular orbital value which is lower than a highest occupied molecular orbital value of the hole transport layer, and the light-emitting layer has a HOMO value which is lower than a highest occupied molecular orbital value of the electron blocking layer.
1. An organic light-emitting device comprising:
a first electrode layer;
a hole injection layer on the first electrode layer;
a hole transport layer on the hole injection layer;
an electron blocking layer on the hole transport layer, and comprising a plurality of layers;
a light-emitting layer on the electron blocking layer;
an electron transport layer on the light-emitting layer;
an electron injection layer on the electron transport layer; and
a second electrode layer on the electron transport layer
wherein the electron blocking layer has a highest occupied molecular orbital value which is lower than a highest occupied molecular orbital of the hole transport layer, and the light-emitting layer has a highest occupied molecular orbital value which is lower than a highest occupied molecular orbital value of the electron blocking layer, and
the highest occupied molecular orbital values of the hole transport layer, the electron blocking layer, and the light-emitting layer decrease according to the order of the layers.
2. The organic light-emitting device of claim 1 , wherein the electron blocking layer comprising the plurality of layers comprises:
a first electron blocking layer on the hole transport layer; and
a second electron blocking layer on the first electron blocking layer,
wherein the second electron blocking layer has a highest occupied molecular orbital value lower than a highest occupied molecular orbital of the first electron blocking layer.
3. The organic light-emitting device of claim 2 , further comprising a P-doped layer between the hole transport layer and the first electron blocking layer.
4. The organic light-emitting device of claim 3 , wherein the electron blocking layer has a thickness in a range from about 25 angstroms to about 300 angstroms.
5. The organic light-emitting device of claim 3 , wherein the P-doped layer has a thickness which is less than 25% of a thickness of the electron blocking layer.
6. The organic light-emitting device of claim 3 , wherein the P-doped layer has a thickness in a range from about 5 angstroms to about 75 angstroms.
7. The organic light-emitting device of claim 2 , further comprising a P-doped layer inserted in the electron blocking layer.
8. The organic light-emitting device of claim 7 , wherein the electron blocking layer has a thickness in a range from about 25 angstroms to about 300 angstroms.
9. The organic light-emitting device of claim 7 , wherein the P-doped layer has a thickness which is less than 25% of a thickness of the electron blocking layer.
10. The organic light-emitting device of claim 7 , wherein the P-doped layer has a thickness which is greater than 25% of a thickness of the electron blocking layer and less than 100% of the thickness of the electron blocking layer.
11. The organic light-emitting device of claim 7 , wherein the P-doped layer has a thickness in a range from about 5 angstroms to about 75 angstroms.
12. The organic light-emitting device of claim 7 , wherein the P-doped layer comprises a first surface on a side of the light-emitting layer and a second surface on a side of the hole transport layer, wherein a distance from the light-emitting layer to the first surface of the P-doped layer is smaller than a thickness of the electron blocking layer.
13. The organic light-emitting device of claim 12 , wherein the P-doped layer is in contact with the light-emitting layer.
14. The organic light-emitting device of claim 12 , wherein the P-doped layer is in contact with the hole transport layer.
15. An organic light-emitting device comprising:
a first electrode layer;
a hole injection layer on the first electrode layer;
a hole transport layer on the hole injection layer;
a multilayer electron blocking layer on the hole transport layer;
a light-emitting layer on the electron blocking layer;
an electron transport layer on the light-emitting layer;
an electron injection layer on the electron transport layer; and
a second electrode layer on the electron transport layer,
wherein the multilayer electron blocking layer comprises a first electron blocking layer, a second electron blocking layer, and a P-doped layer, wherein the P-doped layer is inserted in the first electron blocking layer, the second electron blocking layer, or in a combination of the first electron blocking layer and the second electron blocking layer, and
the highest occupied molecular orbital values of the hole transport layer, the electron blocking layer, and the light-emitting layer decrease according to the order of the layers.
16. The organic light-emitting device of claim 15 , wherein the P-doped layer is in contact with the hole transport layer.
17. The organic light-emitting device of claim 15 , wherein the P-doped layer is in contact with the hole transport layer and the light-emitting layer.