Chip scale package and related methods
Implementations of semiconductor packages may include: a die coupled to a glass lid; one or more inner walls having a first material coupled to the die; an outer wall having a second material coupled to the die; and a glass lid coupled to the die at the one or more inner walls and at the outer wall; wherein the outer wall may be located at the edge of the die and the glass lid and the one or more inner walls may be located within the perimeter of the outer wall at a predetermined distance from the perimeter of the outer wall; and wherein a modulus of the first material may be lower than a modulus of the second material.
1. A method for forming a semiconductor package, the method comprising:
providing a glass lid;
patterning a first material on the glass lid;
patterning a second material on the glass lid;
coupling a wafer to the glass lid at the first material and at the second material; and
forming one or more semiconductor packages from the wafer and the glass lid by singulating the wafer and the glass lid;
wherein the second material forms an outer wall at the edge of the glass lid and the wafer and the first material forms an inner wall inside the perimeter of the outer wall at a predetermined distance from the perimeter of the outer wall; and
wherein a modulus of the first material is lower than a modulus of the second material.
2. The method of claim 1 , wherein a maximum cavity wall stress on the outer wall and on the one or more inner walls is less than 40 MPa.
3. The method of claim 1 , wherein the semiconductor package is capable of passing a moisture sensitivity level (MSL) 1 test.
4. The method of claim 1 , wherein the first material is a dry film and the second material is a solder mask.
5. A method for making a semiconductor package, the method comprising:
providing a wafer and a transparent lid;
patterning a first material to form an inner wall on the wafer;
patterning a second material on the transparent lid to form an outer wall; and
coupling the transparent lid with the wafer at the first material and at the second material;
wherein a modulus of the first material is lower than a modulus of the second material.
6. The method of claim 5 , wherein a maximum cavity wall stress on the outer wall and on the one or more inner walls is less than 40 MPa.
7. The method of claim 5 , wherein the semiconductor package is capable of passing a moisture sensitivity level (MSL) 1 test.
8. The method of claim 5 , wherein the first material is a dry film and the second material is a solder mask.
9. A method for forming a semiconductor package, the method comprising:
providing a transparent lid;
patterning a first material on the transparent lid;
patterning a second material on the transparent lid;
coupling a wafer to the transparent lid at the first material and at the second material; and
forming one or more semiconductor packages from the wafer and the transparent lid by singulating the wafer and the glass lid;
wherein the second material forms an outer wall at the edge of the transparent lid and the wafer and the first material forms an inner wall inside the perimeter of the outer wall at a predetermined distance from the perimeter of the outer wall; and
wherein a modulus of the first material is lower than a modulus of the second material.
10. The method of claim 9 , wherein a maximum cavity wall stress on the outer wall and on the one or more inner walls is less than 40 MPa.
11. The method of claim 9 , wherein the semiconductor package is capable of passing a moisture sensitivity level (MSL) 1 test.
12. The method of claim 9 , wherein the first material is a dry film and the second material is a solder mask.