Light-emitting element having a plurality of light-emitting structures

1. A light-emitting device, comprising:

a first semiconductor layer having an uppermost surface and a bottommost surface opposite to the uppermost surface;

a first light-emitting region, a second light-emitting region, and a third light-emitting region formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous;

a first trench formed between the first light-emitting region and the second light-emitting region, comprising a bottom portion exposing a first surface of the first semiconductor layer;

a second trench formed between the second light-emitting region and the third light-emitting region, comprising a bottom portion exposing the first surface of the first semiconductor layer;

a third trench formed in one of the first, the second and the third light-emitting regions, exposing the first semiconductor layer and extending along a first direction, wherein the first direction is parallel with the uppermost surface of the first semiconductor layer;

an insulating bridge part formed in the first trench and the second trench, connecting the first, the second, and the third light-emitting regions;

a first electrode formed in the third trench, electrically connecting to the first semiconductor layer; and

a second electrode, comprising a second pad formed on one of the first, the second, and the third light-emitting regions and a second extending part extending from the second pad;

wherein the first, the second and the third trenches pass through the uppermost surface of the first semiconductor layer but does not extend to the bottommost surface of the first semiconductor layer;

wherein the second extending part is formed on the insulating bridge part and extends to the first, the second, and the third light-emitting regions.

2. The light-emitting device of claim 1 , wherein the first light emitting region and the second light emitting region comprise:

an active layer on the first semiconductor layer;

a second semiconductor layer on the active layer; and

a transparent conductive layer on the second semiconductor layer.

3. The light-emitting device of claim 1 , wherein the first electrode comprises a first pad and a first extending part extending from the first pad.

4. The light-emitting device of claim 1 , wherein the first electrode comprises an extending direction parallel to the third trench.

5. The light-emitting device of claim 3 , further comprising a first side, a second side, a third side, and a fourth side, wherein the first side is opposite to the third side and the second side is opposite to the fourth side; wherein the first pad is adjacent to the first side and the second pad is adjacent to the third side.

6. The light-emitting device of claim 1 , wherein the second electrode comprises a plurality of second extending parts, wherein the first electrode is located between the second extending parts.

7. The light-emitting device of claim 1 , wherein the first trench comprises an equal width from a top view.

8. The light-emitting device of claim 1 , wherein the first trench and/or the second trench is devoid of the first electrode formed therein.

9. The light-emitting device of claim 1 , further comprising an exposing part surrounding the first light emitting region, the second light emitting region, and the third light emitting region.