Organic light-emitting diode (OLED) display panel, fabrication method and electronic device thereof
An OLED display panel is provided. The OLED display panel comprises a first electrode; an opposite second electrode; and a plurality of stacking layers sandwiched between the first electrode and the second electrode. The plurality of stacking layers at least comprises a first auxiliary light-emitting layer and a light-emitting layer sequentially disposed on the first electrode. The first auxiliary light-emitting layer comprises a host material and a dopant material, and the dopant material comprises a compound of the following chemical formula (I): where n is an integer equal to or larger than 1, X 1 , X 2 and X n+2 each independently has a chemical structure of R′ is selected from any one of a substituted aryl group and a substituted heteroaryl group, and a substituent in the substituted aryl group and a substituent in the substituted heteroaryl group each includes at least one electron acceptor group.
1. An organic light-emitting diode (OLED) display panel, comprising:
a first electrode, a hole injection buffer layer, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a second electrode sequentially stacked on a substrate, wherein:
the hole injection buffer layer is a first auxiliary light-emitting layer, and the electron transport layer is a second auxiliary light-emitting layer;
the first auxiliary light-emitting layer includes a host material and a dopant material, and the dopant material includes a compound of the following chemical formula:
and
the host material includes a compound of the following chemical formula:
2. The OLED display panel according to claim 1 , wherein:
in the first auxiliary light-emitting layer, the dopant material has a volume percentage of less than or equal to approximately 10%.
3. The OLED display panel according to claim 1 , wherein:
the first auxiliary light-emitting layer has a thickness of equal to or smaller than approximately 150 Å.
4. The OLED display panel according to claim 1 , wherein
the second auxiliary light-emitting layer at least comprises a first electron type material.
5. The OLED display panel according to claim 4 , wherein:
the first electron type material at least comprises a first group,
wherein the first group has a conjugated structure containing at least three consecutive benzene rings, and at least one of carbon atoms on the at least three consecutive benzene rings is substituted with a nitrogen atom.
6. The OLED display panel according to claim 5 , wherein:
the first group comprise
7. The OLED display panel according to claim 1 , wherein:
the second auxiliary light-emitting layer is doped with an N-type dopant material.
8. The OLED display panel according to claim 7 , wherein:
the N-type dopant material is a second main group metal and compound, a third main group metal and compound or a rare earth metal.
9. The OLED display panel according to claim 8 , wherein:
the N-type dopant material is ytterbium.
10. The OLED display panel according to claim 7 , wherein:
in the second auxiliary light-emitting layer, the N-type dopant material has a doping volume percentage of approximately 1%-5%.
11. An electronic device, comprising:
an organic light-emitting diode (OLED) display panel that includes:
a first electrode, a hole injection buffer layer, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and a second electrode sequentially stacked on a substrate, wherein:
the hole injection buffer layer is a first auxiliary light-emitting layer, and the electron transport layer is a second auxiliary light-emitting layer;
the first auxiliary light-emitting layer includes a host material and a dopant material, and the dopant material includes a compound of the following chemical formula:
and
the host material includes a compound of the following chemical formula: