Eutectic bonding with AlGe
A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
1. A MEMS structure comprising a MEMS device formed in a cavity of a first semiconductor substrate, the MEMS device being sealed in an AlGeSi sealant, said AlGeSi sealant formed in response to eutectic bonding between an Aluminum Germanium structure formed in the first substrate and a polysilicon layer formed in a second substrate, wherein said Germanium Aluminum structure comprises a layer of Germanium overlaying a layer of Aluminum.
2. A MEMS structure comprising a MEMS device formed in a cavity of a first semiconductor substrate, the MEMS device being sealed in an AlGeSi sealant, said AlGeSi sealant formed in response to eutectic bonding between an Aluminum Germanium structure formed in the first substrate and a polysilicon layer formed in a second substrate, wherein said MEMS structure further comprises an adhesive layer below the Aluminum Germanium structure.
3. The MEMS structure of claim 2 wherein said MEMS structure further comprises an Alumina layer disposed between the Aluminum Germanium structure and the adhesive layer.
4. The MEMS structure of claim 3 wherein said adhesive layer is a Titanium Nitride layer.
5. A MEMS structure comprising a MEMS device formed in a cavity of a first semiconductor substrate, the MEMS device being sealed in an AlGeSi sealant, said AlGeSi sealant formed in response to eutectic bonding between an Aluminum Germanium structure formed in the first substrate and a polysilicon layer formed in a second substrate, wherein said MEMS structure further comprises an Alumina layer below the Polysilicon layer in the second substrate.
6. A MEMS structure comprising a MEMS device formed in a cavity of a first semiconductor substrate, the MEMS device being sealed in an AlGeSi sealant, said AlGeSi sealant formed in response to eutectic bonding between an Aluminum Germanium structure formed in the first substrate and a polysilicon layer formed in a second substrate, wherein said MEMS structure further comprises a Polycide layer below the Polysilicon layer in the second substrate.
7. A MEMS structure comprising a MEMS device formed in a cavity of a first semiconductor substrate, the MEMS device being sealed in an AlGeSi sealant, said AlGeSi sealant formed in response to eutectic bonding between an Aluminum Germanium structure formed in the first substrate and a polysilicon layer formed in a second substrate, wherein said MEMS structure further comprises an Alumina layer below the polysilicon layer and an adhesive layer below the Alumina layer in the second substrate.