Display device and manufacturing method thereof
View Patent ↗The purpose of the present invention is to form both LTPS TFT and Ply-Si TFT on a same substrate. The feature of the display device to realize the above purpose is that: a display device comprising: a substrate including a first TFT having an oxide semiconductor layer and a second TFT having a Poly-Si layer, an undercoat is formed on the substrate, the oxide semiconductor layer is formed on or above the undercoat, a first interlayer insulating film is formed on or above the oxide semiconductor layer, the Poly-Si layer is formed on or above the first interlayer insulating film.
1. A display device comprising:
a substrate including a first TFT having an oxide semiconductor layer and a second TFT having a Poly-Si layer,
an undercoat is formed on the substrate, the oxide semiconductor layer is formed on or above the undercoat,
a first interlayer insulating film is formed on or above the oxide semiconductor layer,
the Poly-Si layer is formed on or above the first interlayer insulating film,
wherein a second interlayer insulating film is formed on or above the Poly-Si layer,
a second through hole is formed through the second interlayer insulating film and a second gate insulating film formed on the Poly-Si layer,
a second source/drain electrode connects with the second TFT through the second through hole,
a first through hole is formed through the second interlayer insulating film, the second gate insulating film and the first interlayer insulating film, and
a first source/drain electrode connects with the first TFT through the first through hole.
2. The display device according to claim 1 ,
wherein the first interlayer insulating film is formed by plural layers including a SiO layer and a SiN layer,
the SiO layer is formed on or above the oxide semiconductor layer.
3. The display device according to claim 1 ,
wherein the first through hole further penetrates a first gate insulating film that covers the oxide semiconductor layer,
the first source/drain electrode connects with the first TFT through the first through hole.
4. The display device according to claim 1 ,
wherein the first TFT is a bottom gate type TFT.
5. The display device according to claim 1 ,
wherein the first TFT is a top gate type TFT.
6. The display device according to claim 1 ,
wherein the undercoat includes a SiO layer, the SiO layer contacts the oxide semiconductor layer.
7. A display device comprising:
a substrate including a first TFT having an oxide semiconductor layer and a second TFT having a Poly-Si layer,
an undercoat is formed on the substrate,
the first TFT is formed on the undercoat,
an AlO layer is formed on or above the first TFT,
a second undercoat is formed covering the AlO layer,
the second TFT is formed on the second undercoat.
8. The display device according to claim 7 ,
wherein the Poly-Si layer and the oxide semiconductor layer do not overlap each other in a plan view.
9. The display device according to claim 7 ,
wherein a second interlayer insulating film is formed on the second TFT,
a second through hole is formed through the second interlayer insulating film and a second gate insulating film formed on the Poly-Si layer, a second source/drain electrode connects with the second TFT through the second through hole,
a first through hole is formed through the second interlayer insulating film, the second gate insulating film, the second undercoat and the AlO layer, a first source/drain electrode connects with the first TFT through the first through hole.
10. The display device according to claim 7 ,
wherein the second undercoat includes a SiO layer, the SiO layer contacts with the AlO layer.
11. The display device according to claim 7 ,
wherein the second undercoat is formed by plural films including a SiO layer and a SiN layer.
12. The display device according to claim 7 ,
wherein a first interlayer insulating film including a SiO layer is formed between the first TFT and the AlO layer.
13. The display device according to claim 9 ,
wherein a first interlayer insulating film including a SiO layer is formed between the first TFT and the AlO layer, the first through hole penetrate the first interlayer insulating film,
the first source/drain electrode connects with the first TFT through the first through hole.
14. The display device according to claim 9 ,
wherein the first through hole further penetrates a first gate insulating film covering the oxide semiconductor layer,
the first source/drain electrode connects with the first TFT through the first through hole.
15. The display device according to claim 9 ,
wherein the first TFT is bottom gate type.
16. The display device according to claim 14 ,
wherein the first TFT is top gate type.