Method of producing optoelectronic semiconductor components and optoelectronic semiconductor component

1. A method of producing optoelectronic semiconductor components comprising:

A) providing a semiconductor layer sequence on a carrier top of a carrier,

B) patterning the semiconductor layer sequence such that at least one mesa structure is formed with side faces,

C) applying at least a portion of a cladding to the semiconductor layer sequence with the mesa structure by a conformal coating method such that all free surfaces are covered by the cladding), and

D) anisotropically etching the cladding such that a flank coating is created from the cladding, which coating is limited with a tolerance of at most 200% of a mean thickness of the flank coating to the side faces of the mesa structure and completely encloses the mesa structure,

wherein step D) takes place without an additional etching mask for the anisotropic etching,

in step C) and before step D) an etching mask layer for isotropic etching is applied isotropically and all over to the cladding, and

the etching mask layer is completely removed in a following method step.

2. A method of producing optoelectronic semiconductor components comprising:

A) providing a semiconductor layer sequence on a carrier top of a carrier,

B) patterning the semiconductor layer sequence such that at least one mesa structure is formed with side faces,

C) applying at least a portion of a cladding to the semiconductor layer sequence with the mesa structure by a conformal coating method such that all free surfaces are covered by the cladding), and

D) anisotropically etching the cladding such that a flank coating is created from the cladding, which coating is limited with a tolerance of at most 200% of a mean thickness of the flank coating to the side faces of the mesa structure and completely encloses the mesa structure,

wherein step D) takes place without an additional etching mask for the anisotropic etching,

the mean thickness of the flank coating is 10 nm to 1 μm,

a mean angle of the side faces to a growth direction of the semiconductor layer sequence is 2° to 40° and to the carrier top is 50° to 88°, and

at least a portion of the cladding is deposited by atomic layer deposition.

3. The method according to claim 2 , wherein

an active zone of the semiconductor layer sequence for the production of light is located in the mesa structure and the active zone is enclosed by the flank coating,

the finished semiconductor components are light-emitting diodes,

the carrier top is exposed in places in step B), and

in step D), the carrier top and a mesa top of the mesa structure remote from the carrier are freed from the cladding and the flank coating is retained as far as the carrier top and as far as the mesa top, respectively, with a tolerance of at most 100% of the mean thickness of the flank coating.

4. The method according to claim 2 , wherein

the mesa structure following step D) projects above the flank coating in a direction away from the carrier by at least 20 nm and at most 0.5 μm,

the active zone reaches as far as the side faces and on the side faces is covered completely by the flank coating, and

the active zone inside the associated mesa structure is a continuous, coherent and unbroken layer.

5. The method according to claim 2 , wherein

the carrier comprises a sacrificial layer on the carrier top, and

the sacrificial layer is removed following step D) completely in regions not covered by the mesa structure and is removed partially in regions between the mesa structure and the carrier such that the mesa structure temporarily projects above the sacrificial layer all around.

6. The method according to claim 5 , wherein

the sacrificial layer is etched selectively with respect to the flank coating,

the partial removal of the sacrificial layer by etching only takes place following completion of the flank coating, and

a complete detachment of the semiconductor layer sequence from the carrier takes place by mechanical force.

7. An optoelectronic semiconductor component comprising:

a semiconductor layer sequence with an active zone for the production of light, and

a flank coating,

wherein

the flank coating has an inner first sublayer with a constant layer thickness and an outer second sublayer,

the semiconductor layer sequence is patterned to a mesa structure with side faces lying externally,

the active zone reaches as far as the side faces and is covered by both sublayers all around on the side faces,

the second sublayer projects beyond the first sublayer along the side faces when seen in cross section such that the first sublayer is completely enclosed by the second sublayer together with the semiconductor layer sequence, and

the flank coating is limited to the side faces and covers the side faces to at least 90%.

8. A method of producing optoelectronic semiconductor components comprising:

A) providing a semiconductor layer sequence on a carrier top of a carrier,

B) patterning the semiconductor layer sequence such that at least one mesa structure is formed with side faces,

C) applying at least a portion of a cladding to the semiconductor layer sequence with the mesa structure by a conformal coating method such that all free surfaces are covered by the cladding), and

D) anisotropically etching the cladding such that a flank coating is created from the cladding, which coating is limited with a tolerance of at most 200% of a mean thickness of the flank coating to the side faces of the mesa structure and completely encloses the mesa structure,

wherein step D) takes place without an additional etching mask for the anisotropic etching,

the cladding and the flank coating are each composed of several sublayers directly following one another, and

the sublayers have materials different from one another and have different extensions along the side faces when seen in cross section.

9. The method according to claim 8 , further comprising:

F) applying only a second of the sublayers after step D),

E) between steps D) and F), a first of the sublayers produced directly on the mesa structure in step D), isotropically etched such that the first sublayer no longer touches the carrier top after step E),

the second sublayer touches the carrier top in places after step F), and

G) anisotropically etching the second sublayer after step F).

10. The method according to claim 9 , wherein

the sublayers are applied by different application methods in steps C) and F),

the second sublayer is thicker than the first sublayer by at least a factor of 3, and

the sublayers are transmissive for visible light and electrically insulating.

11. A method of producing optoelectronic semiconductor components comprising:

A) providing a semiconductor layer sequence on a carrier top of a carrier,

B) patterning the semiconductor layer sequence such that at least one mesa structure is formed with side faces,

C) applying at least a portion of a cladding to the semiconductor layer sequence with the mesa structure by a conformal coating method such that all free surfaces are covered by the cladding), and

D) anisotropically etching the cladding such that a flank coating is created from the cladding, which coating is limited with a tolerance of at most 200% of a mean thickness of the flank coating to the side faces of the mesa structure and completely encloses the mesa structure,

wherein step D) takes place without an additional etching mask for the anisotropic etching,

the carrier is removed completely from the semiconductor layer sequence after step D), and

the semiconductor layer sequence is grown on the carrier in step A).

12. A method of producing optoelectronic semiconductor components comprising:

A) providing a semiconductor layer sequence on a carrier top of a carrier,

B) patterning the semiconductor layer sequence such that at least one mesa structure is formed with side faces,

C) applying at least a portion of a cladding to the semiconductor layer sequence with the mesa structure by a conformal coating method such that all free surfaces are covered by the cladding), and

D) anisotropically etching the cladding such that a flank coating is created from the cladding, which coating is limited with a tolerance of at most 200% of a mean thickness of the flank coating to the side faces of the mesa structure and completely encloses the mesa structure,

wherein step D) takes place without an additional etching mask for the anisotropic etching,

after step D), the carrier is singulated in regions between the mesa structures,

the singulation takes place by laser radiation, sawing or grinding, and

during singulation, no material of the flank coating is removed and singulation trenches are spaced from the flank coating.

13. A method of producing optoelectronic semiconductor components comprising:

A) providing a semiconductor layer sequence on a carrier top of a carrier,

B) patterning the semiconductor layer sequence such that at least one mesa structure is formed with side faces,

C) applying at least a portion of a cladding to the semiconductor layer sequence with the mesa structure by a conformal coating method such that all free surfaces are covered by the cladding), and

D) anisotropically etching the cladding such that a flank coating is created from the cladding, which coating is limited with a tolerance of at most 200% of a mean thickness of the flank coating to the side faces of the mesa structure and completely encloses the mesa structure,

wherein step D) takes place without an additional etching mask for the anisotropic etching,

a first sublayer of the flank coating comprises at least one of the following materials or consists of one or more of these materials: aluminum oxide and aluminum nitride,

a second sublayer of the flank coating comprises at least one of the following materials or consists of one or more of these materials: an oxide of Al or Si or Ti or Ta, a nitride of Al or Si or Ti or Ta or W, TiWN, a parylene, a silicone, a silazane, a photoresist and an ormocer,

the semiconductor layer sequence is based on AlInGaAs, AlInGaN or AlInGaP, and

the carrier comprises at least one of the following materials or consists of one or more of these materials: Si, Ge, Mo and sapphire.