IP Library Granted Patent US 10,634,704
Granted Patent B2
US 10,634,704 · App. 15/679,624 · Granted Apr 28, 2020

Optical pockels voltage sensor assembly device and methods of use thereof

Inventors: Atul Pradhan (Pittsford, NY); Michael Oshetski (Horseheads, NY); Scott Stelick (Slaterville Springs, NY); Joshua Andrew Sperrick (Corning, NY); William Laratta (Paris, FR)
Assignee: MICATU, INC.
G01R15/242G01R1/071G01R1/44G01R15/247
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 10,634,704
App. No.
15/679,624
Granted
Apr 28, 2020
Kind
B2
Abstract

An optical voltage sensor assembly includes an input fiber-optic collimator positioned and configured to collimate input light beam from a light source. A crystal material is positioned to receive the input light beam from the light source and configured to exhibit the Pockels effect when an electric field is applied through the crystal material. An output fiber-optic collimator is positioned to receive an output light beam from the crystal material and configured to focus the output light beam from the crystal onto a detector. Methods of using the optical voltage sensor assembly are also disclosed.

Claims (40)

1. An optical voltage sensor assembly comprising:

an input collimator positioned and configured to collimate an input light beam from a light source;

a crystal material positioned to receive the input light beam from the light source and configured to exhibit the Pockels effect when an electric field is applied through the crystal material;

an output collimator positioned to receive an output light beam from the crystal material and configured to focus the output light beam from the crystal material onto a detector configured to measure the optical phase change between the input light beam and the output light beam based on the Pockels effect;

a temperature sensor configured to measure temperature in the area of the optical voltage sensor assembly; and

a sensor computing device coupled to the detector and the temperature sensor, the sensor computing device comprising a processor and a memory coupled to the processor, wherein the processor executes programmed instructions stored in the memory to:

determine, based on the measured optical phase change based on the Pockels effect, a voltage drop across the crystal material; and

apply one or more calibration factors to the determined voltage drop across the crystal material based on the measured temperature from the temperature sensor to determine a corrected voltage.

2. The optical voltage sensor assembly of claim 1 , wherein the crystal material is a non-centrosymmetric crystal material.

3. The optical voltage sensor assembly of claim 2 , wherein the non-centrosymmetric crystal material is one of crystal point group symmetry 3m, 42m, 43m, m3m, 4 mm, 2 mm, or 23.

4. The optical voltage sensor assembly of claim 1 , wherein the crystal material is selected from the group consisting of C 6 H 5 O 2 N, Pb 0.814 La 0.124 (Ti 0.6 Zr 0.4 )O 3 (PLZT), β-Zns, ZnSe, ZnTe, Bi 12 SiO 20 , Ba 0.25 Sr 0.75 Nb 2 O 6 , Kta 0.35 Sr 0.75 Nb 0.65 O 3 , CsH 2 AsO 4 , NH 4 H 2 PO 4 , NH 4 D 2 PO 4 , KD 2 PO 4 , KH 2 PO 4 , Lithium Niobate (LiNbO 3 ), LiTaO 3 , BaTiO 3 SrTiO 3 , Ag 3 AsS 3 , KNbO 3 , and electro-optic polymers.

5. The optical voltage sensor assembly of claim 1 , further comprising:

an input linear polarizer positioned and configured to polarize the input light beam from the light source; and

an output linear polarizer positioned and configured to polarize the output light beam from the crystal material.

6. The optical voltage sensor assembly of claim 5 , wherein the input linear polarizer and the output linear polarizer have a thickness of less than about 1.0 mm.

7. The optical voltage sensor assembly of claim 1 further comprising:

a retro-prism device coupled to the crystal material and positioned to receive light directed from the input collimator through the crystal material, wherein the retro-prism device is configured to redirect the light received through the crystal material back through the crystal material to the output collimator.

8. The optical voltage sensor assembly of claim 1 , wherein the temperature sensor is coupled to a component of the optical voltage sensor assembly.

9. The optical voltage sensor assembly of claim 1 , wherein the temperature sensor comprises one of a GaAs bandgap fiber-optic temperature sensor, a fluorescence fiber-optic temperature sensor, an electrical temperature sensor, or a mechanical temperature sensor.

10. The optical voltage sensor assembly of claim 1 further comprising:

a pair of electrodes in contact with the crystal material, wherein the pair of electrodes are positioned to provide a voltage potential across the crystal material.

11. A method for measuring voltage comprising:

providing the optical voltage sensor assembly of claim 1 ;

subjecting the crystal material of the optical voltage sensor assembly to an applied electric field;

measuring the optical phase change between the input light beam and the output light beam based on the Pockels effect; and

determining the voltage drop across the crystal material based on the measured optical phase change between the input light beam and the output light beam and one or more properties of the crystal material.

12. The method of claim 11 further comprising:

measuring the temperature near the crystal material of the optical voltage using the temperature sensor; and

applying one or more calibration factors to the determined voltage drop across the crystal material based on the measured temperature to determine the corrected voltage.

13. The method of claim 12 , wherein the temperature sensor is coupled to a component of the optical voltage sensor assembly.

14. The method of claim 11 , wherein the temperature sensor comprises one of a GaAs bandgap fiber-optic temperature sensor, a fluorescence fiber-optic temperature sensor, an electrical temperature sensor, or a mechanical temperature sensor.

15. The method of claim 11 , wherein the crystal material is a non-centrosymmetric crystal material.

16. The method of claim 15 , wherein the non-centrosymmetric crystal material is one of crystal point group symmetry 3m, 42m, 43m, m3m, 4 mm, 2 mm, or 23.

17. The method of claim 11 , wherein the crystal material is selected from the group consisting of C 6 H 5 O 2 N, Pb 0.814 La 0.124 (Ti 0.6 Zr 0.4 )O 3 (PLZT), β-Zns, ZnSe, ZnTe, Bi 12 SiO 20 , Ba 0.25 Sr 0.75 Nb 2 O 6 , Kta 0.35 Sr 0.75 Nb 0.65 O 3 , CsH 2 AsO 4 , NH 4 H 2 PO 4 , NH 4 D 2 PO 4 , KD 2 PO 4 , KH 2 PO 4 , Lithium Niobate (LiNbO 3 ), LiTaO 3 , BaTiO 3 SrTiO 3 , Ag 3 AsS 3 , KNbO 3 , and electro-optic polymers.

18. The method of claim 11 , wherein the optical voltage sensor assembly further comprises an input linear polarizer positioned and configured to polarize the input light beam from the light source, and an output linear polarizer positioned and configured to polarize the output light beam from the crystal material.

19. The method of claim 18 , wherein the input linear polarizer and the output linear polarizer have a thickness of less than about 1.0 mm.

20. The method of claim 11 , wherein the optical voltage sensor assembly further comprises:

a retro-prism device coupled to the crystal material and positioned to receive light directed from the input collimator through the crystal material, wherein the retro-prism device is configured to redirect the light received through the crystal material back through the crystal material to the output collimator.

21. The method of claim 11 , wherein the optical voltage sensor assembly further comprises:

a pair of electrodes in contact with the crystal material, wherein the pair of electrodes are positioned to provide a voltage potential across the crystal material.

Assignments (5)
RELEASE OF SECURITY INTEREST Recorded Jan 9, 2023
From: SILICON VALLEY BANK
To: MICATU INC.
Reel/Frame 062312/0124 →
LIEN Recorded Dec 19, 2022
From: SILICON VALLEY BANK
To: MICATU HOLDINGS, INC.
Reel/Frame 062143/0771 →
SECURITY INTEREST Recorded Jan 25, 2022
From: MICATU INC.
To: TRANSAMERICA LIFE INSURANCE COMPANY
Reel/Frame 058838/0781 →
INTELLECTUAL PROPERTY SECURITY AGREEMENT Recorded Jan 8, 2021
From: MICATU INC.
To: SILICON VALLEY BANK
Reel/Frame 054940/0803 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 19, 2018
From: PRADHAN, ATUL; OSHETSKI, MICHAEL; SPERRICK, JOSHUA ANDREW; LARATTA, WILLIAM
To: MICATU, INC.
Reel/Frame 044964/0823 →
Continuity (4)
Provisional Application 62376147 · Aug 17, 2016
Provisional Application 62450784 · Jan 26, 2017
Provisional Application 62468091 · Mar 7, 2017
Related Publication 20180052192A1 · Feb 22, 2018