Wavelength converted semiconductor light emitting device

1. A method comprising:

forming a plurality of wavelength converting elements, said forming comprising:

forming a first wavelength converting layer, the first wavelength converting layer being a wavelength converting ceramic,

forming a second wavelength converting layer, the second wavelength converting layer including a wavelength converting material mixed in a binder material;

fusing the second wavelength converting layer to the first wavelength converting layer to produce a composite sheet that includes the first wavelength converting layer and the second wavelength converting layer, and

dicing the composite sheet to form the plurality of wavelength converting elements, the dicing being performed after the first wavelength converting layer and the second wavelength converting layer are fused; and

attaching each of the wavelength converting elements to a different one of a plurality of semiconductor light emitting devices such that, for each of the wavelength converting elements, the first wavelength converting layer is disposed between the second wavelength converting layer and the semiconductor light emitting devices.

2. The method of claim 1 , wherein forming the first wavelength converting layer comprises sintering a phosphor into a wafer.

3. The method of claim 1 , wherein forming the second wavelength converting layer comprises:

mixing a wavelength converting material with a glass to produce a mixture; and

rolling the mixture into a sheet.

4. The method of claim 1 , wherein:

the binder material includes a glass;

fusing the first wavelength converting layer to the second wavelength converting layer includes heating the first wavelength converting layer and the second wavelength converting layer to a temperature greater than a reflow temperature of the glass.

5. The method of claim 1 , wherein forming the second wavelength converting layer comprises:

mixing a wavelength converting material with a glass to produce a mixture;

depositing the mixture on the first wavelength converting layer;

spreading the mixture to form a substantially uniform thickness layer.

6. The method of claim 1 , further comprising thinning the first wavelength converting layer prior to fusing the second wavelength converting layer to the first wavelength converting layer.

7. The method of claim 1 , further comprising thinning the second wavelength converting layer after fusing the second wavelength converting layer to the first wavelength converting layer.

8. The method of claim 1 , further comprising:

attaching the plurality of semiconductor light emitting devices to a mount before each of the wavelength converting elements is attached to a different one of the plurality of semiconductor light emitting devices; and

disposing reflective material in spaces between neighboring semiconductor light emitting devices in the plurality.

9. The method of claim 8 , wherein the first wavelength converting layer and the second wavelength converting layer are configured to emit different colors of light.

10. The method of claim 1 , wherein dicing the composite sheet includes forming an angled sidewall on each wavelength converting element.

11. The method of claim 1 , wherein dicing the composite sheet comprises:

forming on a first portion of each wavelength converting element a sidewall having a first angle relative to a top surface of the wavelength converting element; and

forming on a second portion of each wavelength converting element a sidewall having a second angle relative to the top surface of the wavelength converting element,

wherein the first angle is different from the second angle.