IP Library Granted Patent US 10,153,446
Granted Patent B2
US 10,153,446 · App. 15/682,649 · Granted Dec 11, 2018

Display device having pixels including different semiconductor materials

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Quick Facts
Patent No.
US 10,153,446
App. No.
15/682,649
Granted
Dec 11, 2018
Kind
B2
Abstract

A display device having an improved display characteristics and reduced manufacturing cost is provided. The display device includes a plurality of pixels arranged on a surface of a substrate. The plurality of pixels each include: a light-emitting element; a driving transistor; a selecting transistor; and a retention capacitor. The driving transistor has a bottom-gate structure. The driving transistor has a semiconductor layer containing a first semiconductor. The retention capacitor has a first electrode and a second electrode. The first electrode doubles as a gate of the driving transistor. The second electrode is disposed at a lower layer than the first electrode and contains a second semiconductor.

Claims (19)

1. A display device including a plurality of pixels arranged on a surface of a substrate, the plurality of pixels each comprising:

a light-emitting element;

a driving transistor;

a selecting transistor; and

a retention capacitor,

wherein the driving transistor has a bottom-gate structure, and includes a semiconductor layer containing a first semiconductor,

the retention capacitor has a first electrode and a second electrode,

the first electrode doubles as a gate of the driving transistor,

the second electrode is disposed at a lower layer than the first electrode and contains a second semiconductor, and

the selecting transistor has a gate disposed at the same layer as the gate of the driving transistor.

2. The display device according to claim 1 , wherein the driving transistor has a channel region having an area overlapping the second electrode in a plan view.

3. The display device according to claim 1 , wherein the selecting transistor has a bottom-gate structure, and includes a semiconductor layer containing the first semiconductor and disposed at the same layer as the semiconductor layer of the driving transistor.

4. The display device according to claim 1 , wherein the selecting transistor has a top-gate structure, and includes

a semiconductor layer containing the second semiconductor and disposed at the same level as the second electrode.

5. The display device according to claim 1 , further comprising a peripheral circuit disposed on the surface of the substrate, including a plurality of transistors having the second semiconductor, and controlling light emission of the plurality of pixels.

6. The display device according to claim 1 , the plurality of pixels each further comprising:

a first contact electrode provided in a first contact hole and connected to a source electrode of the driving transistor, the first contact hole extending from a higher layer than the driving transistor to the source electrode of the driving transistor; and

a second contact electrode provided in a second contact hole and connected to a drain of the driving transistor and the second electrode, the second contact hole extending from a higher layer than the driving transistor to the second electrode.

7. The display device according to claim 1 , wherein the first semiconductor is an oxide semiconductor, and the second semiconductor is polycrystalline silicon.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 22, 2025
From: JAPAN DISPLAY INC.
To: MAGNOLIA WHITE CORPORATION
Reel/Frame 072130/0313 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 22, 2017
From: MARUYAMA, SATOSHI
To: JAPAN DISPLAY INC.
Reel/Frame 043351/0909 →