Transimpedance amplifier with variable inductance input reducing peak variation over gain
A transimpedance amplifier (TIA) structure includes an input node with a variable inductance component serving to reduce variation in peak amplitude over different gain conditions. According to certain embodiments, an inductor at the TIA input has a first node in communication with a Field Effect Transistor (FET) drain, and a second node in communication with the FET source. A control voltage applied to the FET gate effectively controls the input inductance by adding a variable impedance across the inductor. Under low gain conditions, lowering of inductance afforded by the control voltage applied to the FET reduces voltage peaking. TIAs in accordance with embodiments may be particularly suited to operate over a wide dynamic range to amplify incoming electrical signals received from a photodiode.
1. A method for reducing peaking at an amplifier output under low gain conditions between the amplifier output and an output signal of a photodiode, the method comprising:
providing a transimpedance amplifier (TIA) having an input node; and
connecting the input node of the TIA to a variable inductance component having a first terminal in electrical communication with the output signal of the photodiode;
connecting a second terminal of the variable inductance component to be in electrical communication with the input node of the TIA; and
connecting a third terminal of the variable inductance component to be in electrical communication with a variable control voltage to change an effective inductance at the input node of the TIA, the variable inductance component comprising,
an inductor having a first node in electrical communication with the output signal of the photodiode, a second node in electrical communication with the input node of the TIA, and
a switching device having a first contact in communication with the first node, a second contact in electrical communication with the second node, and a third contact being in electrical communication with the variable control voltage.
2. The method of claim 1 wherein:
the switching device comprises a SiGe bi-CMOS field-effect transistor (bi-CMOS FET);
the first contact comprises a drain of the bi-CMOS FET;
the second contact comprises a source of the bi-CMOS FET; and wherein
the third contact comprises a gate of the bi-CMOS FET in communication with a variable voltage source through a resistor.
3. The method of claim 1 wherein:
the switching device comprises a field-effect transistor (FET);
the first contact comprises a drain of the FET;
the second contact comprises a source of the FET; and wherein
the third contact comprises a gate of the FET in communication with a variable voltage source.
4. The method of claim 3 wherein the FET comprises a MOSFET.
5. The method of claim 4 wherein the MOSFET comprises a p-channel MOSFET.
6. The method of claim 4 wherein the MOSFET comprises an n-channel MOSFET.
7. The method of claim 4 wherein the FET comprises a JFET.
8. The method of claim 1 wherein the switching device comprises a micro-electrical mechanical system having a moveable element.
9. The method of claim 1 wherein the TIA is configured to operate with a dynamic range of about 18 dB to about 20 dB.
10. The method of claim 1 wherein the variable control voltage to change an effective inductance at the input node of the TIA is configured to reduce peaking at an output node of the TIA under low gain conditions.
11. A fiber optic communications system having a photodiode with an output signal, the fiber optic communications system comprising:
a transimpedance amplifier (TIA) having an input node; and
a variable inductance component having a first terminal in electrical communication with the output signal of the photodiode, a second terminal electrically connected to the input node of the TIA, and a third terminal electrically connected to a variable control voltage to change an effective inductance at the input node of the TIA, the variable inductance component comprising,
an inductor having a first node in electrical communication with the photodiode,
a second node in communication with the input node of the TIA and
a switching device having a first contact in communication with the first node, a second contact in electrical communication with the second node, and a third contact being connected to the variable control voltage.
12. The system of claim 11 wherein:
the switching device comprises a SiGe bi-CMOS field-effect transistor (bi-CMOS FET);
the first contact comprises a drain of the bi-CMOS FET;
the second contact comprises a source of the bi-CMOS FET; and wherein
the third contact comprises a gate of the bi-CMOS FET in communication with a variable voltage source through a resistor.
13. The system of claim 11 wherein:
the switching device comprises a field-effect transistor (FET);
the first contact comprises a drain of the FET;
the second contact comprises a source of the FET; and wherein the third contact comprises a gate of the FET in communication with a variable voltage source.
14. The system of claim 13 wherein the FET comprises a MOSFET.
15. The system of claim 14 wherein the MOSFET comprises a p-channel MOSFET.
16. The system of claim 14 wherein the MOSFET comprises an n-channel MOSFET.
17. The system of claim 14 wherein the FET comprises JFET.
18. The system of claim 11 wherein the switching device comprises a micro-electrical mechanical system having a moveable element.
19. The system of claim 11 wherein the TIA is configured to operate with a dynamic range of about 18 dB to about 20 dB.
20. The system of claim 11 wherein the TIA is configured to operate with a dynamic range of about 15 dB to about 18 dB.