Light emitting device with wavelength converting side coat
View Patent ↗Embodiments of the invention include a semiconductor light emitting device, a first wavelength converting member disposed on a top surface of the semiconductor light emitting device, and a second wavelength converting member disposed on a side surface of the semiconductor light emitting device. The first and second wavelength converting members include different wavelength converting materials.
1. A light-emitting device comprising:
a light-emitting semiconductor structure having a first surface, a second surface opposite the first surface, and a plurality of sides surfaces;
a plurality of contacts disposed in contact with the first surface of the light-emitting semiconductor structure;
a wavelength converting tile having a first surface, a second surface opposite the first surface, and a plurality of side surfaces, the wavelength converting tile being disposed on the light-emitting semiconductor structure such that the second surface of the wavelength converting tile is adjacent the second surface of the light-emitting semiconductor structure, the wavelength converting tile comprising a first wavelength converting material; and
a sheet of a second wavelength converting material that is laminated on one or more of the plurality of side surfaces of the light-emitting semiconductor structure and one or more of the plurality of side surfaces of the wavelength converting tile, the sheet of the second wavelength converting material being arranged to cover at least a portion of the one or more of the plurality of side surfaces of the wavelength converting tile, while leaving the first surface of the wavelength converting tile uncovered.
2. The light-emitting device of claim 1 , wherein the first wavelength converting material is different from the second wavelength converting material.
3. The light-emitting device of claim 1 , wherein the light-emitting semiconductor structure has a first thickness, and the wavelength converting tile has a second thickness that is greater than the first thickness.
4. The light-emitting device of claim 1 , wherein the second surface of the wavelength converting tile is coupled to the second surface of the light-emitting semiconductor structure by a layer of bonding material.
5. The light-emitting device of claim 1 , wherein the wavelength converting tile further includes a first substrate and a second substrate, such that a layer of the first wavelength converting material is disposed between the first substrate and the second substrate.
6. The light-emitting device of claim 1 , wherein the sheet of the second wavelength converting material is arranged to cover at least a portion of each of the plurality of side surfaces of the wavelength converting tile.
7. The light-emitting device of claim 1 , wherein the wavelength converting tile includes a first substrate, and the first substrate and a layer of the first wavelength converting material are sintered together to form the wavelength converting tile.
8. A light-emitting device comprising:
a light-emitting semiconductor structure having a first surface, a second surface opposite the first surface, a plurality of side surfaces, and a first thickness;
a plurality of contacts disposed in contact with the first surface of the light-emitting semiconductor structure;
a wavelength converting tile having a first surface, a second surface opposite the first surface, and a plurality of side surfaces, the wavelength converting tile being disposed on the light-emitting semiconductor structure such that the second surface of the wavelength converting tile is adjacent the second surface of the light-emitting semiconductor structure, the wavelength converting tile including a first substrate, a second substrate, and a layer of a first wavelength converting material disposed between the first substrate and the second substrate, the wavelength converting tile having a second thickness that is greater than the first thickness; and
a sheet of wavelength converting material that is laminated on one or more of the plurality of side surfaces of the wavelength converting tile, the sheet of wavelength converting material being arranged to cover at least a portion of the plurality of side surfaces of the wavelength converting tile, while leaving the first surface of the wavelength converting tile uncovered.
9. The light-emitting device of claim 8 , wherein the sheet of the wavelength converting material also includes the first wavelength converting material.
10. The light-emitting device of claim 8 , wherein the sheet of the wavelength converting material includes a second wavelength material that is different from the first wavelength converting material.
11. The light-emitting device of claim 8 , wherein the second surface of the wavelength converting tile is coupled to the second surface of the light-emitting semiconductor structure by a layer of bonding material that is disposed between the second surface of the wavelength converting tile and the second surface of the light-emitting semiconductor structure.
12. The light-emitting device of claim 8 , wherein the first substrate and the second substrate include glass without a wavelength converting material.
13. The light-emitting device of claim 8 , wherein the sheet of the wavelength converting material only partially covers the one or more of the plurality of side surfaces of the tile.
14. The light-emitting device of claim 8 , wherein the sheet of the wavelength converting material is also applied on one or more of the plurality of side surfaces of the light-emitting semiconductor structure.
15. A method for manufacturing a light-emitting device, comprising:
forming a light-emitting semiconductor structure having a first surface, a second surface opposite the first surface, a plurality of side surfaces, and a first thickness;
forming a plurality of contacts in contact with the first surface of the light-emitting semiconductor structure;
disposing a prefabricated wavelength converting tile on the second surface of the light-emitting semiconductor structure, the prefabricated wavelength converting tile having a first surface, a second surface opposite the first surface, a plurality of side surfaces, and a second thickness that is greater than the first thickness, the second surface of the prefabricated wavelength converting tile being disposed adjacent the second surface of the light-emitting semiconductor structure; and
after disposing the prefabricated wavelength converting tile on the second surface of the light-emitting semiconductor structure, laminating a preformed sheet of wavelength converting material on one or more of the plurality of side surfaces of the prefabricated wavelength converting tile, the sheet of wavelength converting material being arranged to cover at least a portion of the one or more of the plurality of side surfaces of the pre-fabricated wavelength converting tile, while leaving the first surface of the tile uncovered.
16. The method of claim 15 , wherein the laminating the preformed sheet of the wavelength converting material includes forming a flexible sheet of the wavelength converting material and laminating the flexible sheet of the wavelength converting material on the one or more of the plurality of side surfaces of the prefabricated wavelength converting tile.
17. The method of claim 15 , wherein the prefabricated wavelength converting tile and the preformed sheet of the wavelength converting material both include a same wavelength converting material.
18. The method of claim 15 , wherein the prefabricated wavelength converting tile includes a first wavelength converting material, and the preformed sheet of the wavelength converting material includes a second wavelength converting material that is different from the first wavelength converting material.
19. The method of claim 15 , wherein the preformed sheet of the wavelength converting material is also applied on one or more of the plurality of side surfaces of the light-emitting semiconductor structure.