Multiple trigger monomer containing photoresist compositions and method
The present disclosure relates to novel multiple trigger monomer containing negative working photoresist compositions and processes. The processes involve removing acid-labile protecting groups from crosslinking functionalities in a first step and crosslinking the crosslinking functionality with an acid sensitive crosslinker in a second step. The incorporation of a multiple trigger pathway in the resist catalytic chain increases the chemical gradient in areas receiving a low dose of irradiation, effectively acting as a built in dose depend quencher-analog and thus enhancing chemical gradient and thus resolution, resolution blur and exposure latitude. The photoresist compositions utilize novel monomers and mixtures of novel monomers. The methods are ideal for fine pattern processing using, for example, ultraviolet radiation, beyond extreme ultraviolet radiation, extreme ultraviolet radiation, X-rays and charged particle rays.
1. A multiple-trigger, negative-working photoresist composition comprising:
a. A polymer comprising crosslinkable functionalities, wherein the at least 90% of the crosslinkable functionalities are attached to acid-labile protecting groups,
b. An acid activatable crosslinker,
c. A photoacid generator or a thermal acid generator, and
d. A monomer component with the following structure:
wherein X and Y is the same or different and each comprise crosslinkable functionalities with acid labile protecting groups attached to the functionalities, wherein R1, R2, R3 and R4 is the same or different and is a branched or unbranched, substituted or unsubstituted, saturated or unsaturated divalent alkyl chain of 1-16 carbon atoms with or without one or more heteroatoms substituted into the chain, a substituted or unsubstituted aromatic group, a heteroaromatic group, a fused aromatic or fused heteroaromatic group, an aralkyl group, a cycloaliphatic group, or a cyclic, bicyclic, or multicyclic ring formed when any 2 or more of R1, R2, R3 and R4 covalently attach to each other.
2. The photoresist composition of claim 1 , comprising a mixture of monomers with structures I-IV.
3. The photoresist composition of claim 2 , wherein at least one of X or Y comprises
(alkyl) j -(aryl) k -(O) p —(COO) q -ALPG
wherein j, k, p, and q take the values in the following table:
-alkyl-
-aryl-
—O—
—COO—
j
k
p
q
1
1
1
1
1
1
0
1
1
1
1
0
1
0
0
1
1
0
1
0
0
1
1
1
0
1
0
1
0
1
1
0
0
0
0
1
wherein alkyl is a branched or unbranched, substituted or unsubstituted, saturated or unsaturated divalent alkyl chain of 1-16 carbon atoms with or without one or more heteroatoms substituted into the chain, aryl is a substituted or unsubstituted aromatic group, a heteroaromatic group, or a fused aromatic or fused heteroaromatic group, and wherein ALPG is a leaving group.
4. The photoresist composition of claim 3 , wherein ALPG is a tertiary alkyl or tertiary cycloalkyl group, an alicyclic group, a ketal or cyclic aliphatic ketal, or an acetal.
5. The photoresist composition of claim 2 , wherein the at least one photoacid generator comprises an onium salt compound, a sulfonium salt, a triphenylsulphonium salt, a sulfonimide, a halogen-containing compound, a sulfone, a sulfone imide, a sulfonate ester, a quinone-diazide, a diazomethane, an iodonium salt, an oxime sulfonate, a dicarboxyimidyl sulfate ester, an ylideneaminooxy sulfonic acid ester, a sulfonyldiazomethane, or a mixture thereof which are capable of generating an acid when exposed to at least one of UV, deep UV, extreme UV, x-ray, or e-beam actinic radiation.
6. The photoresist composition of claim 2 , wherein the at least one acid activated crosslinker comprises an aliphatic, aromatic or aralkyl monomer, oligomer, a resin or polymer, comprising at least one of a glycidyl ether, glycidyl ester, an oxetane, a glycidyl amine, a methoxyrnethyl group, an ethoxy methyl group, a butoxyrnethyl group, a benzyloxymethyl group, dimethylamino methyl group, diethylamino methyl amino group, a dialkylolmethyl amino group, a dibutoxymethyl amino group, a dimethylolmethyl amino group, diethylolmethyl amino group, a dibutylolmethyl amino group, a morpholinomethyl group, acetoxymethyl group, benzyloxymethyl group, formyl group, acetyl group, vinyl group or an isopropenyl group.
7. The photosensitive composition of claim 2 , further comprising a solvent, wherein the solvent comprises an ester, an ether, an ether-ester, a hydroxy ester, a hydroxy ether, a ketone, a keto-ester, a hydrocarbon, an aromatic compound, a halogenated solvent, an alkyl-aryl ether or a combination thereof.
8. The photoresist composition of claim 2 , wherein the acid-labile protecting group is capable of being removed when exposed to a photogenerated acid and optionally during a post exposure baking process, providing a functionality capable of crosslinking with the crosslinker when the crosslinker is exposed to the photogenerated acid.
9. The photoresist composition of claim 2 , wherein monomers (I), (II), (III) and (IV) are monomers with structure (V), (VI), (VII) or (VIII), respectively:
10. The photoresist composition of claim 9 , wherein at least one of X or Y comprise:
-(alkyl) j -(aryl) k -(O) p —(COO) q -ALPG
wherein j, k, p, and q take the values in the following table:
-alkyl-
-aryl-
—O—
—COO—
j
k
p
q
1
1
1
1
1
1
0
1
1
1
1
0
1
0
0
1
1
0
1
0
0
1
1
1
0
1
0
1
0
1
1
0
0
0
0
1
wherein alkyl is a branched or unbranched, substituted or unsubstituted, saturated or unsaturated divalent alkyl chain of 1-16 carbon atoms with or without one or more heteroatoms substituted into the chain, aryl is a substituted or unsubstituted aromatic group, a heteroaromatic group, or a fused aromatic or fused heteroaromatic group, and wherein ALPG is a leaving group.
11. The photoresist composition of claim 10 , wherein ALPG is a tertiary alkyl or tertiary cycloalkyl group, an alicyclic group, a ketal or cyclic aliphatic ketal, or an acetal.
12. The photosensitive composition of claim 10 , further comprising a solvent, wherein the solvent comprises an ester, an ether, an ether-ester, a hydroxy ester, a hydroxy ether, a ketone, a keto-ester, a hydrocarbon, an aromatic compound, a halogenated solvent, an alkyl-aryl ether or a combination thereof.
13. The photoresist composition of claim 10 , wherein the acid-labile protecting group is capable of being removed when exposed to a photogenerated acid and optionally during a post exposure baking process, providing a functionality capable of crosslinking with the crosslinker when the crosslinker is exposed to the photogenerated acid.