Circuit substrate and semiconductor device
To improve a TCT characteristic of a circuit substrate. The circuit substrate comprises a ceramic substrate including a first and second surfaces, and first and second metal plates respectively bonded to the first and second surfaces via first and second bonding layers. A three-point bending strength of the ceramic substrate is 500 MPa or more. At least one of L 1 /H 1 of a first protruding portion of the first bonding layer and L 2 /H 2 of a second protruding portion of the second bonding layer is 0.5 or more and 3.0 or less. At least one of an average value of first Vickers hardnesses of 10 places of the first protruding portion and an average value of second Vickers hardnesses of 10 places of the second protruding portion is 250 or less.
1. A circuit substrate comprising:
a ceramic substrate including a first surface and a second surface;
a first metal plate bonded to the first surface via a first bonding layer; and
a second metal plate bonded to the second surface via a second bonding layer,
wherein the first bonding layer has a first portion protruding from between the first surface and the first metal plate and extending onto the first surface,
wherein the second bonding layer has a second portion protruding from between the second surface and the second metal plate and extending onto the second surface,
wherein at least one of the first bonding layer or the second bonding layer contains Ag, Cu, and Ti,
wherein a three-point bending strength of the ceramic substrate is 500 MPa or more,
wherein at least one of a ratio L 1 /H 1 of a length L 1 (μm) of the first portion to a thickness H 1 (μm) thereof or a ratio L 2 /H 2 of a length L 2 (μm) of the second portion to a thickness H 2 (μm) thereof is 0.5 or more and 3.0 or less, and
wherein at least one of an average value of first Vickers hardnesses of 10 places of the first portion or an average value of second Vickers hardnesses of 10 places of the second portion is 90 or more and 250 or less.
2. The circuit substrate according to claim 1 ,
wherein at least one of the average value of the first Vickers hardnesses or the average value of the second Vickers hardnesses is 90 or more and 230 or less.
3. The circuit substrate according to claim 1 ,
wherein at least one of the average value of the first Vickers hardnesses or the average value of the second Vickers hardnesses is 100 or more and 170 or less.
4. The circuit substrate according to claim 1 ,
wherein at least one of the ratio L 1 /H 1 and the ratio L 2 /H 2 is 1.0 or more and 2.0 or less.
5. The circuit substrate according to claim 1 ,
wherein the ceramic substrate is a silicon nitride substrate.
6. The circuit substrate according to claim 1 ,
wherein at least one of the first metal plate or the second metal plate is a copper plate,
wherein a thickness of the copper plate is 0.6 mm or more, and
wherein a thickness of the ceramic substrate is 0.4 mm or less.
7. The circuit substrate according to claim 1 ,
wherein at least one of the length L 1 or the length L 2 is 40 μm or less.
8. The circuit substrate according to claim 1 ,
wherein in a cross section of the first metal plate along a thickness direction thereof, a side surface of the first metal plate is inclined toward the edge of an outer surface of the first metal plate, and
wherein in a cross section including a thickness direction of the second metal plate a side surface of the second metal plate is inclined toward the edge of an outer surface of the second metal plate.
9. The circuit substrate according to claim 1 ,
wherein at least one of a difference between a maximum value and a minimum value of the first Vickers hardness or a difference between a maximum value and a minimum value of the second Vickers hardness is 50 or less.
10. The circuit substrate according to claim 1 ,
wherein each of the first and second bonding layers contains Ag, Cu, and Ti.
11. The circuit substrate according to claim 10 ,
wherein at least one of the first bonding layer or the second bonding layer further contains at least one element selected from the group consisting of In, Sn, and C.
12. The circuit substrate according to claim 1 , comprising
a plurality of the first metal plates.
13. The circuit substrate according to claim 1 , comprising
a plurality of the first metal plates,
wherein a shortest distance between one of the first metal plates and another one of the first metal plates is 1.1 mm or less.
14. A semiconductor device comprising
the circuit substrate according to claim 1 ; and
a semiconductor element mounted on the circuit substrate.
15. The semiconductor device according to claim 14 , comprising
a plurality of the semiconductor elements.
16. The circuit substrate according to claim 1 ,
wherein the ceramic substrate is a silicon nitride substrate having a heat conductivity of 80 W/mK and a thickness of 0.30 mm or less.
17. The circuit substrate according to claim 1 ,
wherein at least one of the first metal plate or the second metal plate is a copper plate having a thickness of 0.6 mm or more.
18. The circuit substrate according to claim 17 , comprising
a plurality of the first metal plates,
wherein the shortest distance between one of the first metal plates and another one of the first metal plates is 1.1 mm or less.
19. The circuit substrate according to claim 1 ,
wherein the mass ratio of cupper to silver is 2.4 or less in at least one of the first portion or the second portion.
20. The circuit substrate according to claim 19 ,
wherein at least one of the first metal plate or the second metal plate is a copper plate having a thickness of 0.6 mm or more.
21. The circuit substrate according to claim 20 , comprising
a plurality of the first metal plates,
wherein a shortest distance between one of the first metal plates and another of the first metal plates is 1.1 mm or less.