Resonator device

1. A resonator device, comprising:

a resonator including a lower electrode, a plurality of upper electrodes, and a piezoelectric film disposed between the lower electrode and the plurality of upper electrodes;

an upper lid having a first and second opposing surfaces with the first surface facing the plurality of upper electrodes of the resonator to seal an upper surface of the resonator;

a lower lid having a first and second opposing surfaces with the first surface facing the lower electrode of the resonator to seal a lower surface of the resonator;

at least one power terminal electrically connected to at least one of the plurality of upper electrodes; and

a ground terminal disposed on the second surface of the upper lid and electrically connected to the lower electrode via the upper lid,

wherein the upper lid comprises a semiconductor layer with an insulating layer disposed on the first and second opposing surfaces, and

wherein the ground terminal is disposed on the second surface of the upper lid at a position where the insulating layer is removed so that the ground terminal is directly connected to the semiconductor layer.

2. The resonator device according to claim 1 , further comprising:

at least one first through hole extending through the upper lid;

a wire that connects the at least one power terminal with the at least one of the plurality of upper electrodes via the at least one first through hole, respectively; and

an insulating layer interposed between the upper lid and the at least one first through hole.

3. The resonator device according to claim 2 ,

wherein the upper lid is electrically connected to the ground terminal and the lower electrode, and

wherein a capacitance is formed between the upper lid and the at least one power terminal with the insulating layer interposed therebetween.

4. The resonator device according to claim 1 , further comprising a junction layer disposed between the upper lid and the resonator that electrically connects the ground terminal to the lower electrode.

5. The resonator device according to claim 4 , wherein the piezoelectric film of the resonator comprises a via with a conductive layer disposed in the via to electrically connect the junction layer to the lower electrode.

6. The resonator device according to claim 1 , further comprising:

a through hole extending through the upper lid; and

a wire disposed in the through hole to electrically connect the lower electrode to the ground terminal via the through hole.

7. The resonator device according to claim 6 , further comprising a junction layer disposed between the upper lid and the resonator that electrically connects the ground terminal to the lower electrode, wherein the piezoelectric film of the resonator comprises a via with a conductive layer disposed in the via of the piezoelectric film to electrically connect the junction layer to the lower electrode.

8. The resonator device according to claim 1 , wherein the plurality of upper electrodes comprises three upper electrodes electrically connected to each other and extending in a first direction and two upper electrodes electrically connected to each other and extending in a second direction opposite to the first direction and interposed, respectively, between the three upper electrodes.

9. The resonator device according to claim 8 , wherein the at least one power terminal comprises a first power terminal electrically connected to the three upper electrodes and a second power terminal connected to the two upper electrodes, such that neighboring upper electrodes vibrate in opposite phase when an alternating electric field is applied in a c-axis direction of the piezoelectric film.

10. A resonator device comprising:

a resonator including a lower electrode, a plurality of upper electrodes, and a piezoelectric film disposed between the lower electrode and the plurality of upper electrodes;

an upper lid having a first and second opposing surfaces with the first surface facing the plurality of upper electrodes of the resonator to seal an upper surface of the resonator;

a lower lid having a first and second opposing surfaces with the first surface facing the lower electrode of the resonator to seal a lower surface of the resonator;

at least one power terminal electrically connected to at least one of the plurality of upper electrodes; and

a ground terminal disposed on the second surface of the upper lid and electrically connected to the lower electrode via the upper lid,

wherein the upper lid comprises a semiconductor layer with an insulating layer disposed on the first and second opposing surfaces, and

wherein the semiconductor layer comprises degenerate silicon.

11. A resonator device, comprising:

a resonator including a piezoelectric film, a lower electrode disposed on a first surface of the piezoelectric film, a plurality of upper electrodes disposed on a second surface of the piezoelectric film, the plurality of upper electrodes including at least one first upper electrode and at least one second upper electrode electrically isolated from each other;

an upper lid having inner and outer opposing surfaces with the inner surface facing the plurality of upper electrodes of the resonator to seal the resonator;

a lower lid having inner and outer opposing surfaces with the inner surface facing the lower electrode of the resonator to seal the resonator;

a pair of power terminals disposed on the outer surface of the upper lid and respectively coupled to the at least one first and at least one second upper electrodes by respective through holes extending through the upper lid; and

a ground terminal disposed on the outer surface of the upper lid and electrically connected to the lower electrode via the upper lid,

wherein the upper lid comprises a semiconductor layer with an insulating layer disposed on the inner and outer opposing surfaces, and

wherein the ground terminal is disposed on the outer surface of the upper lid at a position where the insulating layer is removed so that the ground terminal is directly connected to the semiconductor layer.

12. The resonator device according to claim 11 ,

wherein the upper lid is electrically connected to the ground terminal and the lower electrode, and

wherein a capacitance is formed between the upper lid and at least one of the pair of power terminals with the insulating layer interposed therebetween.

13. The resonator device according to claim 11 , wherein the semiconductor layer comprises degenerate silicon.

14. The resonator device according to claim 13 , further comprising a junction layer disposed between the upper lid and the resonator that electrically connects the ground terminal to the lower electrode.