Magnetic memory device

1. A magnetic memory device comprising a stacked structure including a first magnetic layer having a variable magnetization direction, a nonmagnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the nonmagnetic layer and having a fixed magnetization direction, wherein:

as viewed in a direction parallel to a stack direction of the stacked structure, a pattern of a lower surface of the first magnetic layer is located inside a pattern of an upper surface of the first magnetic layer, a pattern of an upper surface of the second magnetic layer is located inside a pattern of a lower surface of the second magnetic layer, the pattern of the upper surface of the first magnetic layer substantially conforms to a pattern of a lower surface of the nonmagnetic layer, and the pattern of the lower surface of the second magnetic layer substantially conforms to a pattern of an upper surface of the nonmagnetic layer, and

wherein an angle formed between a side surface of the first magnetic layer and the lower surface of the first magnetic layer is greater than 90 degrees, an angle formed between the side surface of the first magnetic layer and the upper surface of the first magnetic layer is smaller than 90 degrees, an angle formed between a side surface of the second magnetic layer and the lower surface of the second magnetic layer is smaller than 90 degrees, and an angle formed between the side surface of the second magnetic layer and the upper surface of the second magnetic layer is greater than 90 degrees.

2. The device of claim 1 , wherein as viewed in the direction parallel to the stack direction of the stacked structure, the patterns of the lower surface and the upper surface of the first magnetic layer, the patterns of the lower surface and the upper surface of the nonmagnetic layer, and the patterns of the lower surface and the upper surface of the second magnetic layer are circular.

3. The device of claim 1 , wherein a first resistance of the stacked structure when the magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer are parallel to each other is lower than a second resistance of the stacked structure when the magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer are antiparallel to each other.

4. The device of claim 1 , wherein:

the stacked structure further includes a third magnetic layer which is provided on the second magnetic layer, and has a fixed magnetization direction which is antiparallel to the magnetization direction of the second magnetic layer; and

as viewed in the direction parallel to the stack direction of the stacked structure, a pattern of an upper surface of the third magnetic layer is located inside a pattern of a lower surface of the third magnetic layer or substantially conforms to the pattern of the lower surface of the third magnetic layer.

5. The device of claim 4 , wherein an angle formed between a side surface of the third magnetic layer and the lower surface of the third magnetic layer is equal to 90 degrees or smaller than 90 degrees.

6. The device of claim 4 , wherein an angle formed between a side surface of the third magnetic layer and the upper surface of the third magnetic layer is equal to 90 degrees or greater than 90 degrees.

7. The device of claim 4 , wherein as viewed in the direction parallel to the stack direction of the stacked structure, the pattern of the upper surface of the second magnetic layer substantially conforms to the pattern of the lower surface of the third magnetic layer.

8. The device of claim 4 , wherein as viewed in the direction parallel to the stack direction of the stacked structure, the patterns of the lower surface and the upper surface of the third magnetic layer are circular.

9. The device of claim 4 , wherein:

the stacked structure further includes an upper conductive layer provided on the third magnetic layer; and

as viewed in the direction parallel to the stack direction of the stacked structure, a pattern of an upper surface of the upper conductive layer is located inside a pattern of a lower surface of the upper conductive layer, or substantially conforms to the pattern of the lower surface of the upper conductive layer.

10. The device of claim 9 , wherein as viewed in the direction parallel to the stack direction of the stacked structure, the pattern of the upper surface of the third magnetic layer substantially conforms to the pattern of the lower surface of the upper conductive layer.

11. The device of claim 9 , wherein the upper conductive layer is a hard mask layer.

12. The device of claim 1 , wherein the stacked structure further includes a lower conductive layer on which the first magnetic layer is provided.

13. The device of claim 12 , wherein an angle formed between a side surface of the lower conductive layer and a lower surface of the lower conductive layer is smaller than 90 degrees.

14. The device of claim 12 , wherein an angle formed between a side surface of the lower conductive layer and an upper surface of the lower conductive layer is smaller than 90 degrees.

15. The device of claim 12 , wherein as viewed in the direction parallel to the stack direction of the stacked structure, the pattern of the lower surface of the first magnetic layer substantially conforms to a pattern of an upper surface of the lower conductive layer.

16. The device of claim 1 , wherein as viewed in the direction parallel to the stack direction of the stacked structure, the pattern of the upper surface of the first magnetic layer substantially conforms to the pattern of the lower surface of the second magnetic layer.

17. The device of claim 2 , wherein a diameter of the pattern of the lower surface of the first magnetic layer is smaller than a diameter of the pattern of the lower surface of the second magnetic layer.