Light-emitting device
A light-emitting device includes: a rectangular shape with a 1 st side, a 2 nd side opposite to the 1 st side, and a 3 rd side connecting the 1 st and the 2 nd sides; a first electrode pad formed adjacent to the 3 rd side; a second electrode pad formed adjacent to the 2 nd side; a first extension electrode, extending from the first electrode pad in a direction away from the 3 rd side and bended toward the 2 nd side; and a second extension electrode, including a first and a second branches respectively extending from the second electrode pad; wherein a distance between the first electrode pad and the 3 rd side is smaller than a distance between the second electrode pad and the 3 rd side; wherein an end portion of the first branch includes a first arc bending to the 3 rd side and a minimum distance between the first branch and the 1 st side is smaller than a minimum distance between the second branch and the 1 st side.
1. A light-emitting device, comprising:
a rectangular shape with a first side, a second side opposite to the first side, and a third side connecting the first side and the second side;
a first electrode pad formed adjacent to the third side;
a second electrode pad formed adjacent to the second side;
a first extension electrode, extending from the first electrode pad in a direction away from the third side and bended toward the second side; and
a second extension electrode, comprising a first branch and a second branch respectively extended from the second electrode pad;
wherein a distance between the first electrode pad and the third side is smaller than a distance between the second electrode pad and the third side;
wherein an end portion of the first branch comprises a first arc bending to the third side and a minimum distance between the first branch and the first side is smaller than a minimum distance between the second branch and the first side.
2. The light-emitting device according to claim 1 , further comprising a substrate and a light-emitting structure formed on the substrate;
wherein the light-emitting structure comprises a lower semiconductor layer, an active layer, and an upper semiconductor layer;
wherein the first extension electrode is formed on the lower semiconductor layer and the second extension electrode is formed on the upper semiconductor layer.
3. The light-emitting device according to claim 2 , further comprising a transparent conductive layer formed on the upper semiconductor layer.
4. The light-emitting device according to claim 1 , further comprising a current blocking layer under the first electrode pad.
5. The light-emitting device according to claim 1 , wherein the first branch comprises a stripe between the second electrode pad and the first arc and is parallel with the third side.
6. The light-emitting device according to claim 1 , wherein the second branch comprises a second arc connecting the second electrode pad and a stripe connecting to the arc, and the stripe is parallel with the third side.
7. The light-emitting device according to claim 1 , wherein the first extension electrode comprises a stripe parallel to the third side.
8. The light-emitting device according to claim 2 , wherein the second electrode pad is located near one corner of the substrate.
9. The light-emitting device according to claim 8 , wherein the first electrode pad and the second electrode pad are located on the substrate in a diagonal direction.
10. A light-emitting device, comprising:
a light-emitting stack comprising a rectangular shape with a first side, a second side opposite to the first side, a third side connecting the first side and the second side, and a fourth side opposite to the third side;
a transparent conductive layer, formed on the light-emitting stack;
a mesa formed in the light-emitting stack, adjacent to the third side;
a first electrode formed on the mesa, comprising a first stripe and a bending portion, wherein the first electrode is elongated from the third side in a direction away from the third side and bends toward the second side, and the bending portion is between the first stripe and the third side;
a second electrode formed on the light-emitting stack, comprising:
a second electrode pad adjacent to the second side;
a first branch and a second branch formed on the transparent conductive layer, and respectively extending from the second electrode pad,
wherein an end portion of the first branch bends to the third side and a minimum distance between the first branch and the first side is smaller than a minimum distance between the second branch and the first side.
11. The light-emitting device according to claim 10 , wherein the light-emitting stack comprises a n-type semiconductor layer, an active layer, and a p-type semiconductor layer; wherein the mesa is a top surface of the n-type semiconductor layer not covered by the active layer and the p-type semiconductor layer.
12. The light-emitting device according to claim 10 , further comprising a current blocking layer under the second electrode pad.
13. The light-emitting device according to claim 10 , further comprising a current blocking layer under the first electrode.
14. The light-emitting device according to claim 10 , further comprising an imaginary line connecting a distal end of the first branch to a distal end of the second branch, and wherein the bending portion of the first electrode is located between the second electrode pad and the imaginary line.
15. The light-emitting device according to claim 10 , wherein the first stripe of the first electrode is parallel with the third side.
16. The light-emitting device according to claim 10 , wherein the first stripe is located between the first branch and the second branch.
17. The light-emitting device according to claim 10 , wherein the second branch comprises an arc connecting to the second electrode pad and a second stripe connecting to the arc, and the second stripe is parallel with the first stripe.