Stacked semiconductor chip RGBZ sensor
An apparatus is described that includes a first semiconductor chip having a first pixel array. The first pixel array has visible light sensitive pixels. The apparatus includes a second semiconductor chip having a second pixel array. The first semiconductor chip is stacked on the second semiconductor chip such that the second pixel array resides beneath the first pixel array. The second pixel array has IR light sensitive pixels for time-of-flight based depth detection.
1. An image sensor comprising:
a backside illumination pixel array including (i) pixels of a first type, and, (ii) for each pixel, a light guide structure between the pixel and a front side surface of the backside illumination pixel array; and
a front side illumination pixel array on which the backside illumination pixel array is stacked, the front side illumination pixel array including (i) pixels of a second type, and, (ii) for each pixel, a light guide structure between the pixel and a front side surface of the front side pixel array.
2. The image sensor of claim 1 , wherein:
the pixels of the first type comprise visible light sensitive pixels, and
the pixels of the second type comprise infrared light sensitive pixels.
3. The image sensor of claim 1 , wherein the pixels of the second type are larger than the pixels of the first type.
4. The image sensor of claim 1 , wherein corresponding light guide structures of the backside illumination pixel array and the front side illumination pixel array are coupled to allow incident light that passes through the pixels of the first type in the backside illumination pixel array to flow to the pixels of the second type in the front side pixel array.
5. The image sensor of claim 1 , wherein the pixels of the first type absorb light of the first type and allow light of the second type to pass through.
6. The image sensor of claim 1 , wherein the front side illumination pixel array is thicker than the backside illumination pixel array.
7. The image sensor of claim 1 , wherein the backside illumination pixel array comprises:
a semiconductor die layer; and
a front side metallization layer.
8. The image sensor of claim 1 , wherein the front side illumination pixel array comprises:
a semiconductor die layer; and
an interconnect metallization layer.
9. A camera comprising:
an image sensor comprising:
a backside illumination pixel array including (i) pixels of a first type, and, (ii) for each pixel, a light guide structure between the pixel and a front side surface of the backside illumination pixel array, and
a front side illumination pixel array on which the backside illumination pixel array is stacked, the front side illumination pixel array including (i) pixels of a second type, and, (ii) for each pixel, a light guide structure between the pixel and a front side surface of the front side pixel array.
10. The camera of claim 9 , wherein:
the pixels of the first type comprise visible light sensitive pixels, and
the pixels of the second type comprise infrared light sensitive pixels.
11. The camera of claim 9 , wherein the pixels of the second type are larger than the pixels of the first type.
12. The camera of claim 9 , wherein corresponding light guide structures of the backside illumination pixel array and the front side illumination pixel array are coupled to allow incident light that passes through the pixels of the first type in the backside illumination pixel array to flow to the pixels of the second type in the front side pixel array.
13. The camera of claim 9 , wherein the pixels of the first type absorb light of the first type and allow light of the second type to pass through.
14. The camera of claim 9 , wherein the front side illumination pixel array is thicker than the backside illumination pixel array.
15. The camera of claim 9 , wherein the backside illumination pixel array comprises:
a semiconductor die layer; and
a front side metallization layer.
16. The camera of claim 9 , wherein the front side illumination pixel array comprises:
a semiconductor die layer; and
an interconnect metallization layer.
17. A system comprising:
a camera comprising an image sensor comprising:
a backside illumination pixel array including (i) pixels of a first type, and, (ii) for each pixel, a light guide structure between the pixel and a front side surface of the backside illumination pixel array, and
a front side illumination pixel array on which the backside illumination pixel array is stacked, the front side illumination pixel array including (i) pixels of a second type, and, (ii) for each pixel, a light guide structure between the pixel and a front side surface of the front side pixel array; and
a processor configured to perform a time of flight calculation based on one or more signals output by one or more of the pixels of the second type.
18. The system of claim 17 , wherein:
the pixels of the first type comprise visible light sensitive pixels, and
the pixels of the second type comprise infrared light sensitive pixels.
19. The system of claim 17 , wherein the pixels of the second type are larger than the pixels of the first type.
20. The system of claim 17 , wherein corresponding light guide structures of the backside illumination pixel array and the front side illumination pixel array are coupled to allow incident light that passes through the pixels of the first type in the backside illumination pixel array to flow to the pixels of the second type in the front side pixel array.