Manufacturing method for semiconductor device
Provided is a manufacturing method for a semiconductor device using stamping press working which is capable of securing an island having substantially the same size as that of a related art even when a lead frame thickness is increased. A portion between the island and the inner lead is punched with a punch having a width of equal to or larger than a minimum required plate thickness for stamping press working. A periphery of the island is squeezed from an island back surface. A gap between the island and the inner lead is set to be smaller than a thickness of the lead frame, and at the same time, the thickness of the lead frame in the periphery of the island is set smaller than an original plate thickness of the lead frame, thereby obtaining a required area of the island.
1. A manufacturing method for a semiconductor device, the method comprising:
preparing a lead frame material;
punching the lead frame material with a stamping press die to manufacture a lead frame, the lead frame having a constant plate thickness and the stamping press having a width equal to or larger than the constant plate thickness, the lead frame comprising:
an island configured to mount a semiconductor element thereon;
an inner lead; and
an outer lead contiguous to the inner lead;
squeezing a periphery of the island from a back surface of the island after punching to increase an area of the island,
wherein, after squeezing, a gap between the island and the inner lead is smaller than the constant plate thickness of the lead frame;
fixing the semiconductor element to a front surface of the island with a die attach material;
sealing the semiconductor element, the island, and the inner lead with a sealing resin without exposing the back surface of the island; and
cutting the semiconductor device from the lead frame, the semiconductor device having the outer lead protruding from the sealing resin, and having the semiconductor element, the island, and the inner lead sealed with the sealing resin.
2. The manufacturing method for a semiconductor device according to claim 1 , wherein the constant plate thickness of the lead frame is equal to or larger than one-fourth of a thickness of the sealing resin after sealing.
3. The manufacturing method for a semiconductor device according to claim 1 , wherein cutting comprises cutting a suspended lead extending from the island.
4. The manufacturing method for a semiconductor device according to claim 1 , wherein cutting comprises cutting a suspended lead extending from the island.