Method of manufacturing semiconductor device

1. A method of manufacturing a semiconductor device, the method comprising:

forming a SOG film on a wafer, the wafer comprising a semiconductor substrate and a polyimide film exposed on a surface of the wafer, and the SOG film being formed so as to cover the polyimide film;

applying a protection tape on a surface of the SOG film;

processing the wafer on which the protection tape is applied;

peeling the protection tape from the wafer;

exposing the SOG film to light so as to form an opening in the SOG film after the protection tape is peeled; and

forming a metal film in the opening,

wherein the SOG film comprises photosensitivity.

2. The method of claim 1 , further comprising:

plasma-processing the surface of the wafer on which the polyimide film is exposed before the formation of the SOG film.