IP Library Granted Patent US 10,007,004
Granted Patent B2
US 10,007,004 · App. 15/697,127 · Granted Jun 26, 2018

Apparatus and method of manufacturing radiation detection panel

Inventors: Hitoshi Chiyoma (Otawara, JP); Atsuya Yoshida (Nasushiobara, JP); Wataru Matsuyama (Nasushiobara, JP); Toyoo Yamamoto (Nasushiobara, JP); Hiroshi Aida (Otawara, JP); Yuichi Shimba (Utsunomiya, JP)
Assignee: TOSHIBA ELECTRON TUBES & DEVICES CO., LTD.
G01T1/20C23C14/0694C23C14/225C23C14/24C23C14/505G01T1/202
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Quick Facts
Patent No.
US 10,007,004
App. No.
15/697,127
Granted
Jun 26, 2018
Kind
B2
Abstract

According to one embodiment, an apparatus of manufacturing a radiation detection panel, includes an evaporation source configured to evaporate a scintillator material and emit the scintillator material vertically upward, a holding mechanism located vertically above the evaporation source, and holding a photoelectric conversion substrate, and a heat conductor arranged opposite to the holding mechanism with a gap.

Claims (17)

1. A method of manufacturing a radiation detection panel, comprising:

positioning a photoelectric conversion substrate vertically above an evaporation source such that a deposition surface of the photoelectric conversion substrate is exposed to the evaporation source and inclined with respect to a vertical axis; and

evaporating a scintillator material and emitting the scintillator material vertically upward by the evaporation source to deposit a fluorescent film on the deposition surface,

wherein

when the scintillator material is deposited on the deposition surface, the photoelectric conversion substrate is rotated,

the photoelectric conversion substrate is positioned to satisfy 45′≤θ≤70° at a center of the deposition surface, where θ is an angle made inside between an incident direction of the scintillator material and a normal line of the deposition surface; and

the photoelectric conversion substrate is rotated by setting a rotation axis as an axis along a normal line of the center of the deposition surface.

2. The method of claim 1 , wherein

the photoelectric conversion substrate is positioned to satisfy 50°≤θ≤65° at the center of the deposition surface.

3. The method of claim 1 , wherein

an angle between a vertical axis passing through the scintillator material and the deposition surface is less than 30°.

4. The method of claim 1 , wherein

a vacuum deposition method in which deposition is performed under a vacuum pressure of 1×10 −2 Pa or less is utilized.

5. The method of claim 1 , wherein

the photoelectric conversion substrate is rotated at a rotational speed of 4 rpm or more.

6. The method of claim 1 , wherein

the scintillator material contains cesium iodide (CsI) as a main component.

Assignments (1)
CHANGE OF NAME Recorded Dec 11, 2018
From: TOSHIBA ELECTRON TUBES & DEVICES CO., LTD.
To: CANON ELECTRON TUBES & DEVICES CO., LTD.
Reel/Frame 047788/0490 →
Priority Claims (4)
JP 2011-276157 · Dec 16, 2011 · national
JP 2011-276158 · Dec 16, 2011 · national
JP 2011-276207 · Dec 16, 2011 · national
JP 2011-276208 · Dec 16, 2011 · national
Continuity (3)
Continuation 14301460 · Jun 11, 2014
Continuation PCTJP2012081674 · Dec 6, 2012
Related Publication 20170363751A1 · Dec 21, 2017