Semiconductor light-emitting device
View Patent ↗A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.
1. A semiconductor light-emitting device comprising:
an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the side surface and the first portion;
wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion;
wherein in a cross-sectional view the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.
2. The semiconductor light-emitting device according to claim 1 , wherein the main light-extraction surface comprises a first light-extraction region corresponding to the first portion and a second light-extraction region corresponding to the second portion, and when the semiconductor light-emitting device is driven, a near-field luminous intensity in the first light-extraction region is larger than a near-field luminous intensity in the second light-extraction region.
3. The semiconductor light-emitting device according to claim 2 , wherein the main light-extraction surface further comprises a maximum near-field luminous intensity, and the near-field luminous intensity in the first light-extraction region is between 70% and 100% of the maximum near-field luminous intensity, the near-field luminous intensity in the second light-extraction region is between 0% and 70% of the maximum near-field luminous intensity, and a ratio of an area of the first light-extraction region to an area of the second light-extraction region is between 0.25 and 0.45.
4. The semiconductor light-emitting device according to claim 2 , wherein the second light-extraction region is between the first light-extraction region and the side surface.
5. The semiconductor light-emitting device according to claim 1 , wherein the epitaxial structure comprises a first semiconductor stack, a second semiconductor stack, and an active layer between the first semiconductor stack and the second semiconductor stack, and the main light-extraction surface is on the first semiconductor stack and the lower surface is on the second semiconductor stack.
6. The semiconductor light-emitting device according to claim 5 , wherein the concentration of the doping material in the second semiconductor stack in the second portion is over 1*10 18 /cm 3 , and that in the first semiconductor stack in the second portion is lower than 1*10 18 /cm 3 .
7. The semiconductor light-emitting device according to claim 1 , wherein the second portion exposes on the side surface.
8. The semiconductor light-emitting device according to claim 1 , wherein the doping material comprises Zn, Te or Sb.
9. The semiconductor light-emitting device according to claim 8 , wherein the concentration of the doping material in the second portion decreases along a direction from the lower surface to the main light-extraction surface.
10. The semiconductor light-emitting device according to claim 2 , wherein a shape of the first light-extraction region is the same as a shape of the main light-extraction surface.
11. The semiconductor light-emitting device according to claim 1 , wherein a shape of the main light-extraction surface comprises a circle or a regular polygon.
12. The semiconductor light-emitting device according to claim 1 , further comprising an upper electrode connecting the main light-extraction surface and a second ohmic contact structure connecting the lower surface.
13. The semiconductor light-emitting device according to claim 12 , wherein the upper electrode, the second ohmic contact structure and the first portion are overlapped in a vertical direction.
14. The semiconductor light-emitting device according to claim 12 , wherein an area of the upper electrode is between 1% and 10% of an area of the main light-extraction surface, and an area of the second ohmic contact structure is between 1% and 10% of the area of the lower surface.
15. The semiconductor light-emitting device according to claim 12 , wherein a material of the second ohmic contact structure comprises transparent conductive material.
16. The semiconductor light-emitting device according to claim 12 , further comprising a reflective stack covering the second ohmic contact structure and the second semiconductor stack.
17. The semiconductor light-emitting device according to claim 16 , further comprising a conductive substrate and an adhesive layer between the reflective stack and the conductive substrate.
18. The semiconductor light-emitting device according to claim 1 , wherein the main light-extraction surface comprises a circumference and a ratio of a thickness of the epitaxial structure to the circumference is between 2% and 20%.
19. The semiconductor light-emitting device according to claim 1 , further comprising a boundary between the first portion and the second portion, wherein the boundary is a curve.