IP Library Granted Patent US 10,276,224
Granted Patent B2
US 10,276,224 · App. 15/700,769 · Granted Apr 30, 2019

Magnetic memory having metal portions and magnetic memory array including same

Inventors: Hirofumi Morise (Kanagawa, JP); Tsuyoshi Kondo (Kanagawa, JP); Nobuyuki Umetsu (Kanagawa, JP); Yasuaki Ootera (Kanagawa, JP); Susumu Hashimoto (Tokyo, JP); Masaki Kado (Kanagawa, JP); Takuya Shimada (Kanagawa, JP); Michael Arnaud Quinsat (Kanagawa, JP); Shiho Nakamura (Kanagawa, JP)
Assignee: Toshiba Memory Corporation
G11C11/161G11C11/1655G11C11/1673G11C11/1675G11C19/0841H01L43/08G11C11/1659
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Quick Facts
Patent No.
US 10,276,224
App. No.
15/700,769
Granted
Apr 30, 2019
Kind
B2
Abstract

According to an embodiment, a magnetic memory includes a first magnetic portion, a second magnetic portion, a first nonmagnetic portion, and a controller. The first magnetic portion includes a first portion and a second portion. The controller in a first operation supplies a first current from the first portion toward the second portion. The controller in a second operation supplies a second current to from the second portion toward the first portion. A first electrical resistance value can be different from a second electrical resistance value. The first electrical resistance value is between the second magnetic portion and the portion of the first magnetic portion before the first operation and the second operation are performed. The second electrical resistance value is between the second magnetic portion and the portion of the first magnetic portion after the first operation and the second operation are performed.

Claims (67)

1. A magnetic memory, comprising:

a first magnetic portion including a first portion, a second portion, a plurality of third portions, and a plurality of fourth portions, the plurality of third portions and the plurality of fourth portions being provided alternately in a first direction between the first portion and the second portion, the first direction being from the first portion toward the second portion;

a second magnetic portion;

a first nonmagnetic portion provided between the second magnetic portion and a portion of the first magnetic portion;

a plurality of first metal portions including a first metal material, the plurality of first metal portions respectively overlapping the plurality of third portions in a second direction crossing the first direction; and

a controller performing a first operation and a second operation, the controller being electrically connected to the first portion and the second portion, the controller in the first operation supplying a first current to the first magnetic portion from the first portion toward the second portion, the controller in the second operation after the first operation supplying a second current to the first magnetic portion from the second portion toward the first portion,

a first electrical resistance value can be different from a second electrical resistance value, the first electrical resistance value being a value of an electrical resistance between the second magnetic portion and the portion of the first magnetic portion before the first operation and the second operation are performed, the second electrical resistance value being a value of an electrical resistance between the second magnetic portion and the portion of the first magnetic portion after the first operation and the second operation are performed.

2. The magnetic memory according to claim 1 , wherein

the first magnetic portion includes a plurality of first regions and a plurality of second regions provided alternately along the first direction,

a length in the second direction of the first region is longer than a length in the second direction of the second region,

one of the plurality of third portions includes one of the plurality of first regions and one of the plurality of second regions, and

one of the plurality of fourth portions includes another one of the plurality of first regions and another one of the plurality of second regions.

3. The magnetic memory according to claim 2 , wherein

the one of the plurality of third portions and the one of the plurality of fourth portions are in contact in the first direction, and

a position in the first direction of a boundary between the one of the plurality of third portions and the one of the plurality of fourth portions is between a position in the first direction of the one of the plurality of first regions and a position in the first direction of the other one of the plurality of second regions.

4. The magnetic memory according to claim 1 , further comprising a plurality of second metal portions including a second metal material, the second metal material being different from the first metal material,

the plurality of first metal portions and the plurality of second metal portions being provided alternately in the first direction,

the plurality of second metal portions respectively overlapping the plurality of fourth portions in the second direction.

5. The magnetic memory according to claim 4 , wherein

the first metal portion includes at least one material selected from the group consisting of Au, Ir, Al, Pb, Ta, W, and Hf, and

the second metal portion includes at least one material selected from the group consisting of Pt, Pd, and Rh.

6. The magnetic memory according to claim 1 , further comprising a plurality of insulating portions,

the plurality of first metal portions and the plurality of insulating portions being provided alternately in the first direction,

the plurality of insulating portions respectively overlapping the plurality of fourth portions in the second direction.

7. The magnetic memory according to claim 1 , wherein an orientation of a magnetization of the first magnetic portion is aligned with the second direction.

8. The magnetic memory according to claim 1 , wherein

the first magnetic portion further includes a plurality of first regions and a plurality of second regions provided alternately along the first direction,

a length in a second direction of the first region being longer than a length in the second direction of the second region, the second direction crossing the first direction,

one of the plurality of third portions including one of the plurality of first regions and one of the plurality of second regions,

one of the plurality of fourth portions including another one of the plurality of first regions and another one of the plurality of second regions.

9. The magnetic memory according to claim 8 , wherein

the one of the plurality of third portions and the one of the plurality of fourth portions are in contact in the first direction, and

a position in the first direction of a boundary between the one of the plurality of third portions and the one of the plurality of fourth portions is between a position in the first direction of the one of the plurality of first regions and a position in the first direction of the other one of the plurality of second regions.

10. The magnetic memory according to claim 8 , wherein

each of the plurality of first metal portions includes a third region and a fourth region, a thickness in the second direction of the fourth region being thicker than a thickness in the second direction of the third region,

the third region included in the one of the plurality of first metal portions is provided around the one of the plurality of first regions included in the one of the plurality of third portions, and

the fourth region included in the one of the plurality of first metal portions is provided around the one of the plurality of second regions included in the one of the plurality of third portions.

11. The magnetic memory according to claim 10 , further comprising:

a third magnetic portion; and

a second nonmagnetic portion provided between the third magnetic portion and another portion of the first magnetic portion.

12. The magnetic memory according to claim 1 , further comprising a plurality of second metal portions including a second metal material, the second metal material being different from the first metal material,

the plurality of first metal portions and the plurality of second metal portions being provided alternately in the first direction,

the plurality of second metal portions being provided respectively around the plurality of fourth portions.

13. The magnetic memory according to claim 12 , further comprising:

a plurality of first insulating layers; and

a plurality of second insulating layers,

the plurality of first insulating layers being provided respectively around the plurality of first metal portions,

the plurality of second insulating layers being provided respectively around the plurality of second metal portions,

the plurality of first insulating layers including the first metal material.

14. The magnetic memory according to claim 1 , wherein the controller performs a third operation between the first operation and the second operation, the controller in the third operation not causing a current to flow between the first portion and the second portion.

15. The magnetic memory according to claim 1 , wherein

the controller performs a third operation between the first operation and the second operation,

the controller in the third operation supplies a third current to the first magnetic portion, the third current having an orientation from the first portion toward the second portion or an orientation from the second portion toward the first portion, and

the absolute value of a current value of the third current is less than the absolute value of a current value of the first current and less than the absolute value of a current value of the second current.

16. A magnetic memory array, comprising:

a plurality of the magnetic memories according to claim 1 ;

a word line;

a switching element including a first terminal, a second terminal, and a gate, the first terminal being electrically connected to the first portion of one of the plurality of magnetic memories, the second terminal being connected to a fixed potential, the gate being connected to the word line; and

a bit line electrically connected to the second portion of the one of the plurality of magnetic memories,

the controller being electrically connected to the word line and the gate.

17. A magnetic memory, comprising:

a first magnetic portion including a first portion, a second portion, a plurality of third portions, and a plurality of fourth portions, the plurality of third portions and the plurality of fourth portions being provided alternately in a first direction between the first portion and the second portion, the first direction being from the first portion toward the second portion, the first magnetic portion having a tubular configuration;

a second magnetic portion;

a first nonmagnetic portion provided between the second magnetic portion and a portion of the first magnetic portion;

a plurality of first metal portions including a first metal material, the plurality of first metal portions being provided respectively around the plurality of third portions; and

a controller performing a first operation and a second operation, the controller being electrically connected to the first portion and the second portion, the controller in the first operation supplying a first current to the first magnetic portion from the first portion toward the second portion, the controller in the second operation after the first operation supplying a second current to the first magnetic portion from the second portion toward the first portion,

a first electrical resistance value can be different from a second electrical resistance value, the first electrical resistance value being a value of an electrical resistance between the second magnetic portion and the portion of the first magnetic portion before the first operation and the second operation are performed, the second electrical resistance value being a value of an electrical resistance between the second magnetic portion and the portion of the first magnetic portion after the first operation and the second operation are performed.

Assignments (5)
MERGER Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 055659/0471 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 055669/0001 →
CHANGE OF NAME AND ADDRESS Recorded Jan 22, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 055669/0401 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 5, 2018
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 044830/0819 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 18, 2017
From: MORISE, HIROFUMI; KONDO, TSUYOSHI; UMETSU, NOBUYUKI; OOTERA, YASUAKI; HASHIMOTO, SUSUMU; KADO, MASAKI; SHIMADA, TAKUYA; QUINSAT, MICHAEL ARNAUD; NAKAMURA, SHIHO
To: KABUSHIKI KAISHA TOSHIBA
Reel/Frame 043890/0422 →
Priority Claims (1)
JP 2017-039600 · Mar 2, 2017 · national
Continuity (1)
Related Publication 20180254076A1 · Sep 6, 2018