Direct texture transparent conductive oxide served as electrode or intermediate layer for photovoltaic and display applications
The present invention provides transparent semiconducting films for constructing a translucent electrode that possess a high transparency and low sheet resistance. Further, the transparent semiconducting films have a high light diffusion property, which is capable to be a translucent front/back electrode in a light-emitting device for improving the light emission efficiency and a front/intermediate/back electrode in a multi-junction solar cell for improving the light trapping effect. Related fabrication method and how they are applied in different fields are also provided in the present invention.
1. A transparent semiconductor comprising:
at least a bottom layer and at least a top layer sequentially deposited on a base substrate, wherein said bottom layer and top layer are made of at least two different metal oxides having two different crystalline temperatures,
wherein said top layer is direct textured to form a plurality of pyramid-like structures on the surface thereof having only an orientation peak at 34±0.4 degrees two theta in a XRD pattern thereof.
2. The transparent semiconductor according to claim 1 , wherein one of the at least two metal oxides is selected from indium oxide (In 2 O 3 ), SnO 2 , ZnO, CdO, InO 1.5 , GaO 1.5 , NiO, or CuMO 2 , where M is Al, Ga, In, Sc, Cr, Y, or B; and the other of the at least two metal oxides is zinc oxide (ZnO) or tin oxide (SnO 2 ) sequentially deposited on said base substrate.
3. The transparent semiconductor according to claim 2 , wherein said indium oxide based bottom layer is doped with a metal oxide selected from the group consisting of titanium oxide (TiO 2 ), cerium oxide (CeO 2 ), tungsten oxide (WO 3 ) and tin oxide (SnO 2 ).
4. The transparent semiconductor according to claim 2 , wherein the zinc oxide based top layer is doped with a metal oxide selected from the group consisting of gallium oxide (Ga 2 O 3 ), aluminum oxide (Al 2 O 3 ) and boron oxide (B 2 O 3 ).
5. The transparent semiconductor according to claim 2 , wherein the tin oxide based top layer is doped with a metal oxide selected from the group consisting of gallium oxide (Ga 2 O 3 ), aluminum oxide (Al 2 O 3 ) and antimony oxide (Sb 2 O 3 ).
6. The transparent semiconductor according to claim 3 , wherein the titanium oxide has a weight ratio from 1% to 5% with respect to the total weight of said indium oxide based bottom layer doped with said titanium oxide (ITiO).
7. The transparent semiconductor according to claim 3 , wherein the cerium oxide has a weight ratio of 10% with respect to the total weight of said indium oxide based bottom layer doped with said cerium oxide (ICO).
8. The transparent semiconductor according to claim 3 , wherein the tungsten oxide has a weight ratio of 1% with respect to the total weight of said indium oxide based bottom layer doped with said tungsten oxide (IWO).
9. The transparent semiconductor according to claim 3 , wherein the film thickness of said bottom layer is 150 nm to 600 nm.
10. The transparent semiconductor according to claim 4 , wherein the film thickness of said top layer is 150 nm to 2,200 nm.
11. A method for fabricating a transparent semiconductor on a base substrate comprising:
sequentially depositing a first metal oxide and a second metal oxide having two different crystalline temperatures forming at least two semiconducting layers on said base substrate by at least two rounds of sputtering under a first processing temperature and a second processing temperature, respectively; and
controlling thickness for each of said layers during said sequential depositing,
wherein a top layer of said at least two semiconducting layers is direct textured by said sputtering to form a plurality of pyramid-like structures on the surface thereof.
12. The method according to claim 11 , wherein said first metal oxide is selected from indium oxide (In 2 O 3 ), SnO 2 , ZnO, CdO, InO 1.5 , GaO 1.5 , NiO, or CuMO 2 , where M is Al, Ga, In, Sc, Cr, Y, or B; and said second metal oxide is zinc oxide (ZnO) or tin oxide (SnO 2 ).
13. The method according to claim 11 , wherein the first processing temperature for depositing the first metal oxide based semiconducting layer is at about 25° C., room temperature, or a temperature below the crystalline temperature of any of said metal oxides.
14. The method according to claim 11 , wherein the second processing temperature for depositing the second metal oxide based semiconducting layer is from 25° C., room temperature, or a temperature below the crystalline temperature of any of said metal oxides to 350° C.
15. The method according to claim 11 , wherein the thickness of the first metal oxide based semiconducting layer is from 150 nm to 600 nm.
16. The method according to claim 11 , wherein the thickness of the second metal oxide based semiconducting layer is from 150 nm to 2,200 nm.
17. The method according to claim 12 , wherein said indium oxide (In 2 O 3 ) is doped with a metal oxide selected from the group consisting of titanium oxide (TiO 2 ), cerium oxide (CeO 2 ), tungsten oxide (WO 3 ) and tin oxide (SnO 2 ).
18. The method according to claim 12 , wherein said zinc oxide (ZnO) is doped with a metal oxide selected from the group consisting of gallium oxide (Ga 2 O 3 ), aluminum oxide (Al 2 O 3 ) and boron oxide (B 2 O 3 ).
19. A multi-junction solar comprising a surface electrode, stacks of a photovoltaic semiconducting layer, an intermediate layer, and a backside electrode, being sequentially formed on a base substrate, wherein said intermediate layer is the transparent semiconductor according to claim 1 .
20. A nitride-based light-emitting device comprising a buffer layer, n-doped nitride based semiconducting layer, a nitride based quantum-well layer, a p-doped nitride based semiconducting layer, a transparent conducting electrode, being sequentially formed on a base substrate, wherein said transparent conducting electrode is the transparent semiconductor according to claim 1 .