MULTIPLE WAFER SINGLE BATH ETCHER
An etcher comprises a bath, a plurality of blades, and a tunnel. The bath includes a first electrode at a first end and a second electrode at a second end. The plurality of blades is configured to fit in the bath. At least one blade of the plurality of blades holds a wafer. At least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.
1 . An etcher, comprising:
a bath with a first electrode at a first end and a second electrode at a second end;
a plurality of blades configured to fit in the bath, wherein at least one blade of the plurality of blades holds a wafer, wherein the first blade holds the wafer using a vacuum clamp at a backside outer edge of the wafer; and
at least one tunnel, wherein the at least one tunnel is configured to fit between adjacent blades of the plurality of blades in the bath.
2 . An etcher of claim 1 , further comprising a lid that covers the bath.
3 . An etcher of claim 1 , wherein the vacuum clamp comprises a vacuum space between two concentric seals and the backside outer edge of the wafer.
4 . An etcher of claim 1 , wherein the first blade has a seal at an outer edge.
5 . An etcher of claim 1 , wherein the first blade has one or more robot grasping features.
6 . An etcher of claim 5 , wherein a grasping feature of the one or more robot grasping feature comprises one or more of the following: a hole, a ledge, a peg, a lip, or a slot.
7 . An etcher of claim 1 , wherein the tunnel includes one or more top slots.
8 . An etcher of claim 1 , wherein the tunnel is attached to a holder.
9 . An etcher of claim 1 , further comprising a sparger.
10 . An etcher of claim 9 , wherein the sparger includes holes to enable liquid to move near an etch side of the wafer.
11 . An etcher of claim 10 , wherein the holes are situated circumferentially at a shallow angle to the etch side of the wafer.
12 . An etcher of claim 9 , wherein the sparger is attached to the tunnel.
13 . An etcher of claim 1 , further comprising a temperature controller.
14 . An etcher of claim 1 , wherein the first electrode comprises a wire mesh.
15 . An etcher of claim 14 , wherein the wire mesh comprises a platinum mesh with a 1 to 10 mm grid spacing.
16 . An etcher of claim 15 , wherein the minimum wire density is achieved using a wire size of 0.25 to 2 mm diameter with a 1 to 10 mm grid spacing.
17 . A method for etching, comprising:
providing a bath with a first electrode at a first end and a second electrode at a second end;
providing a plurality of blades configured to fit the bath, wherein a first blade of the plurality of blades holds a wafer, wherein the first blade holds the wafer using a vacuum clamp at a backside outer edge of the wafer;
providing a tunnel, wherein the tunnel is configured to fit between the first blade of the plurality of blades and a second blade of the plurality of blades in the bath; and
etching the wafer.