Antireflective compositions with thermal acid generators
New methods and substrates are provided that include antireflective compositions that comprise one or more thermal acid generators.
1. A method for forming a photoresist relief image, comprising:
a) applying on a substrate a layer of a coating composition comprising: 1) a resin; and 2) a solvent component; and 3) a thermal acid generator comprising a structure of Formula (I):
X⊖⊕YH (I)
wherein Y has a structure of Formula (II):
each R 1 is independently C 1 -C 6 haloalkyl, —CN, —NO 2 , —COR 2 , —COOR 2 , —CONR 2 or —SO 2 R 2 ;
R 2 is independently hydrogen, C 1 -C 6 alkyl, C 3 -C 6 cycloalkyl or phenyl, which may be optionally substituted;
n is an integer from 1 to 5; and
X is an anion component; and
b) applying a layer of a photoresist composition above the coating composition layer; and
c) exposing the photoresist layer to patterned activating radiation and developing the exposed photoresist layer to form a photoresist life image.
2. A method of any one of claim 1 wherein the coating composition comprises a hydrophilic resin.
3. The method of claim 1 wherein each R 1 is independently —COR 2 , —COOR 2 , —CONR 2 or —SO 2 R 2 .
4. The method of claim 1 wherein each R 1 is independently CF 3 , —CN, —NO 2 , acetyl or ester.
5. The method of claim 1 wherein R 1 is ester that is not reactive during lithographic processing.
6. The method of claim 1 wherein the thermal acid generator compound has a structure of the following Formula (A), (B) or (C):
7. The method of claim 1 wherein YH of Formula (II) is one of the following structures:
8. A coated substrate comprising:
a substrate comprising
a) a coating composition comprising: 1) a resin; and 2) a thermal acid generator comprising a structure of Formula (I):
X⊖⊕YH (I)
wherein Y has a structure of Formula (II):
each R 1 is independently halogen, C 1 -C 6 haloalkyl, —CN, —NO 2 , —COR 2 , —COOR 2 , —CONR 2 or —SO 2 R 2 ;
R 2 is independently hydrogen, C 1 -C 6 alkyl, C 3 -C 6 cycloalkyl or phenyl, which may be optionally substituted;
n is an integer from 1 to 5; and
X is an anion component; and
b) a layer of a photoresist composition above the coating composition layer.
9. The substrate of claim 8 wherein YH of Formula (I) is one of the following structures:
10. The substrate of claim 8 wherein each R 1 is independently —COR 2 , —COOR 2 , —CONR 2 or —SO 2 R 2 .
11. The substrate of claim 8 wherein each R′ is independently CF 3 , —CN, —NO 2 , acetyl or ester.
12. The substrate of claim 8 wherein R 1 is ester that is not reactive during lithographic processing.