INTEGRATED IMAGING SENSOR WITH TUNABLE FABRY-PEROT INTERFEROMETER
An integrated device including a photodetector, a transparent substrate, and one or more spacers. The photodetector is formed in a portion of a wafer. The one or more spacers separate the photodetector and the transparent substrate.
1 . An integrated device, comprising:
a photodetector formed in a portion of a wafer;
a transparent substrate; and
one or more spacers, wherein the one or more spacers separate the photodetector and the transparent substrate.
2 . The integrated device as in claim 1 , wherein the one or more spacers are bonded to the transparent substrate.
3 . The integrated device as in claim 1 , wherein the one or more spacers are bonded to the photodetector.
4 . The integrated device as in claim 1 , wherein the transparent substrate is silver coated.
5 . The integrated device as in claim 1 , wherein the photodetector includes light sensing elements.
6 . The integrated device as in claim 5 , wherein the light sensing elements comprise one of the following: a PN junction, a complementary metal oxide semiconductor, or a charge coupled device.
7 . The integrated device as in claim 1 , wherein the photodetector includes metal lines.
8 . The integrated device as in claim 1 , wherein a handle wafer is attached to the photodetector.
9 . The integrated device as in claim 8 , wherein the handle wafer comprises one of the following: a silicon handle wafer, a glass handle wafer, or an aluminum wafer.
10 . The integrated device as in claim 1 , wherein the wafer is thinned on a side.
11 . The integrated device as in claim 10 , wherein one or more films are applied to the wafer on the side that was thinned.
12 . The integrated device as in claim 11 , wherein the one or more films comprise one or more of the following: a reflective film, a partially reflective film, an anti-reflective film, or a color filtering film.
13 . The integrated device as in claim 10 , wherein the wafer is thinned by grinding, etching, or polishing.
14 . The integrated device as in claim 1 , wherein the one or more spacers are made from silicon dioxide, silicon nitride, or polyimide.
15 . The integrated device as in claim 1 , wherein the one or more spacers are made from a piezoelectric material.
16 . The integrated device as in claim 1 , wherein a spacer height is able to be adjusted by applying an electric signal to the piezoelectric material via electrodes.
17 . A method for manufacture of an integrated device, comprising:
providing a photodetector formed in a portion of a wafer;
providing a transparent substrate; and
providing one or more spacers, wherein the one or more spacers separate the photodetector and the transparent substrate.