IP Library Granted Patent US 10,283,543
Granted Patent B2
US 10,283,543 · App. 15/719,174 · Granted May 7, 2019

Image sensors with diffractive lenses

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Quick Facts
Patent No.
US 10,283,543
App. No.
15/719,174
Granted
May 7, 2019
Kind
B2
Abstract

An image sensor may include an array of imaging pixels. Each imaging pixel may have a photosensitive area that is covered by a respective diffractive lens to focus light onto the photosensitive area. The diffractive lenses may have a higher index of refraction than the surrounding materials. The diffractive lenses may be formed on an upper or lower surface of a planarization layer or may be embedded within the planarization layer. In some cases, multiple diffractive lenses may be formed over the imaging pixels. Some of the multiple diffractive lenses may have refractive indexes lower than the planarization layer such that the diffractive lenses defocus light. Focusing and defocusing diffractive lenses may be used to tune the response of the imaging pixels to incident light.

Claims (31)

1. An image sensor comprising a plurality of imaging pixels, wherein each imaging pixel of the plurality of imaging pixels comprises:

a photodiode;

a color filter element formed over the photodiode; and

a diffractive lens formed over the color filter element, wherein the diffractive lens of each imaging pixel is formed from a first material that has a first index of refraction, wherein there is a gap between each diffractive lens and respective adjacent diffractive lenses, and wherein a layer that is formed from a second material having a second index of refraction that is different than the first index of refraction fills each gap and extends continuously between each diffractive lens and respective adjacent diffractive lenses.

2. The image sensor defined in claim 1 , wherein the diffractive lens of each imaging pixel has a planar upper surface and a planar lower surface.

3. The image sensor defined in claim 2 , wherein no microlens with a curved surface is formed over the diffractive lens of each pixel.

4. The image sensor defined in claim 1 , wherein the diffractive lens comprises silicon nitride.

5. The image sensor defined in claim 1 , further comprising:

a planarization layer that is formed over the plurality of imaging pixels.

6. The image sensor defined in claim 5 , wherein each diffractive lens is formed on a surface of the planarization layer.

7. The image sensor defined in claim 5 , wherein the layer that is formed from the second material comprises a planarization layer and wherein each diffractive lens is embedded within the planarization layer.

8. An imaging pixel comprising:

a photosensitive area;

a color filter element formed over the photosensitive area;

a planarization layer formed over the color filter element; and

a diffractive lens formed over the color filter element, wherein the diffractive lens is transparent, wherein the diffractive lens has first and second opposing surfaces, wherein the first and second surfaces of the diffractive lens are planar, wherein the diffractive lens has a first index of refraction, and wherein the planarization layer has a second index of refraction that is lower than the first index of refraction; and

an additional diffractive lens formed below the diffractive lens, wherein a portion of the planarization layer is interposed between the diffractive lens and the additional diffractive lens.

9. The imaging pixel defined in claim 8 , wherein the diffractive lens is embedded within the planarization layer.

10. The imaging pixel defined in claim 8 , wherein the additional diffractive lens has a third index of refraction and wherein the second index of refraction is greater than the third index of refraction.

11. The imaging pixel defined in claim 8 , wherein the additional diffractive lens has a third index of refraction and wherein the second index of refraction is less than the third index of refraction.

12. An image sensor comprising a plurality of imaging pixels, wherein each imaging pixel of the plurality of imaging pixels comprises:

a photosensitive area;

a planar diffractive lens formed over the photosensitive area, wherein the planar diffractive lens focuses incident light onto the photosensitive area and wherein the planar diffractive lens has an upper surface, a lower surface, and edge surfaces; and

a planarization layer, wherein the upper surface, the lower surface, and the edge surfaces of the planar diffractive lens directly contact the planarization layer.

13. The image sensor defined in claim 12 , wherein the planar diffractive lens of each imaging pixel has a greater index of refraction than the planarization layer.

14. The image sensor defined in claim 12 , wherein the planar diffractive lens comprises silicon nitride.

15. The image sensor defined in claim 6 , wherein the layer that is formed from the second material is formed on the surface of the planarization layer and wherein only the layer that is formed from the second material and the diffractive lenses are formed in direct contact with the surface of the planarization layer.

16. The imaging pixel defined in claim 8 , wherein the additional diffractive lens is transparent, wherein the additional diffractive lens has first and second opposing surfaces, wherein the first and second surfaces of the additional diffractive lens are planar, and wherein the additional diffractive lens has a third index of refraction that is different than the first index of refraction and the second index of refraction.

17. The imaging pixel defined in claim 8 , wherein the portion of the planarization layer is in direct contact with the diffractive lens and wherein the portion of the planarization layer is in direct contact with the additional diffractive lens.

18. The imaging pixel defined in claim 8 , wherein the diffractive lens and the additional diffractive lens are both embedded in the planarization layer.

19. The imaging pixel defined in claim 18 , wherein the diffractive lens is formed in a first plane, wherein the additional diffractive lens is formed in a second plane that is parallel to the first plane and positioned below the first plane, and wherein the portion of the planarization layer is formed in a third plane that is parallel to the first plane and that is interposed between the first and second planes.

Assignments (3)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 046530, FRAME 0460 Recorded Jun 23, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064075/0001 →
PATENT SECURITY AGREEMENT Recorded Jul 11, 2018
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 046530/0460 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 29, 2017
From: LEE, BYOUNGHEE
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 043739/0555 →