Composition and polyamideimide composite and polyamideimide film and electronic device

1. A composition comprising:

a polyamideimide precursor modified with an alkoxysilane group and

an oligosilica compound,

wherein the polyamideimide precursor is polyamide-co-poly(amic acid), and

wherein the oligosilica compound is a condensation product of an organosilane diol and an alkoxysilane compound.

2. The composition of claim 1 , wherein the composition comprises water in a trace amount of less than or equal to about 100 parts per million.

3. The composition of claim 1 , wherein the composition does not comprise water.

4. The composition of claim 1 , wherein the organosilane diol is represented by Chemical Formula 1:

wherein, in Chemical Formula 1,

R 1 and R 2 are independently a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C3 to C8 cycloalkyl group, a substituted or unsubstituted C2 to C20 alkenyl group, a substituted or unsubstituted C2 to C20 alkynyl group, or a substituted or unsubstituted C6 to C20 aryl group, and

n is an integer ranging from 1 to 10.

5. The composition of claim 4 , wherein at least one of R 1 and R 2 of Chemical Formula 1 is a substituted or unsubstituted C6 to C20 aryl group.

6. The composition of claim 1 , wherein the alkoxysilane compound includes trialkoxysilane, tetraalkoxysilane, or a combination thereof.

7. The composition of claim 6 , wherein the alkoxysilane compound is tetramethoxysilane, tetraethoxysilane, or a combination thereof.

8. The composition of claim 1 , wherein the oligosilica compound is obtained by a non-hydrolytic condensation reaction of the organosilane diol and the alkoxysilane compound in the presence of an alkaline-earth metal hydroxide.

9. The composition of claim 1 , wherein an amount of the oligosilica compound is about 0.1 percent by weight to about 30 percent by weight based on a total amount of the composition.

10. The composition of claim 1 , wherein an amount of the oligosilica compound is about 5 percent by weight to about 20 percent by weight based on a total amount of the composition.

11. The composition of claim 1 , wherein the polyamideimide precursor modified with an alkoxysilane group is a reaction product of (i) a polyamideimide precursor obtained from an anhydride compound, a diamine compound, and a dicarboxylic acid compound, and (ii) a reactive organosilane compound.

12. The composition of claim 11 , wherein the reactive organosilane compound is represented by Chemical Formula 2:

wherein, in Chemical Formula 2,

R 1 to R 3 are independently a C1 to C6 alkyl group or a C1 to C6 alkoxy group, provided that one or more of R 1 to R 3 is a C1 to C6 alkoxy group,

L is a single bond, a substituted or unsubstituted C1 to C12 alkylene group, a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C1 to C12 heteroarylene group, or a combination thereof, and

A is —NH 2 , an anhydride group, or a carboxylic acid group.

13. The composition of claim 12 , wherein the reactive organosilane compound is gamma aminopropyl trimethoxysilane, aminophenyl trimethoxysilane, 3-(triethoxysilyl)propyl succinyl anhydride, or a combination thereof.

14. A polyamideimide composite comprising a cured product of the composition of claim 1 .

15. The polyamideimide composite of claim 14 , wherein the cured product comprises:

a polyamideimide matrix, and

an oligosilica compound bound to the polyamideimide matrix.

16. The polyamideimide composite of claim 15 , wherein an amount of silicon (Si) in the composite is about 4 percent by weight to about 14 percent by weight based on a total amount of the composite.

17. A polyamideimide film comprising the polyamideimide composite of claim 14 .

18. The polyamideimide film of claim 17 , wherein the polyamideimide film has average light transmittance of greater than or equal to about 80% for light in a wavelength range of 300 to 800 nanometers and haze of less than or equal to about 2.0.

19. The polyamideimide film of claim 18 , wherein the polyamideimide film has a yellow index (YI) of less than or equal to about 3.5.

20. An electronic device includes the polyamideimide film of claim 17 .

21. A method of manufacturing a polyamideimide film, comprising:

preparing a polyamideimide precursor,

reacting the polyamideimide precursor with a reactive organosilane compound to prepare a polyamideimide precursor modified with an alkoxysilane group,

preparing an oligosilica compound through a non-hydrolytic condensation reaction of the organosilane diol and an alkoxysilane compound,

mixing the polyamideimide precursor modified with an alkoxysilane group with the oligosilica compound, and

curing the mixture,

wherein the polyamideimide precursor is polyamide-co-poly(amic acid).

22. The method of claim 21 , wherein the oligosilica compound is prepared in the presence of an alkaline-earth metal hydroxide.