Display device
View Patent ↗A display device comprising: a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate, a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate, a source/drain electrode of the first TFT connects with the silicon (Si) via a first through hole, a source/drain electrode of the second TFT connects with the oxide semiconductor via a second through hole, metal films are made on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view, the channel has a channel width, an AlO layer is formed on the metal films and the oxide semiconductor, the second source/drain electrode and the metal films are connected via the second through hole formed in the AlO layer.
1. A display device comprising:
a first TFT using silicon (Si) and a second TFT using oxide semiconductor are formed on a substrate,
a distance between the silicon (Si) and the substrate is smaller than a distance between the oxide semiconductor and the substrate,
a first source/drain electrode of the first TFT connects with the silicon (Si) via a first through hole,
a second source/drain electrode of the second TFT connects with the oxide semiconductor via a second through hole,
metal films are made directly on the oxide semiconductor sandwiching a channel of the oxide semiconductor in a plan view,
an aluminum oxide layer is formed on the metal films and the oxide semiconductor,
the second source/drain electrode and the metal films are connected via the second through hole formed in the aluminum oxide layer.
2. The display device according to claim 1 , wherein
the aluminum oxide layer is formed to cover the display area except the area of the first through hole and the area of the second through hole in a plan view.
3. The display device according to claim 1 , wherein
the aluminum oxide layer is formed to cover the display area except the area of the silicon (Si) of the first TFT and the area of the second through hole in a plan view.
4. The display device according to claim 1 , wherein
the channel has a channel width, and
a width of the channel width direction of the metal film is bigger than the channel width.
5. The display device according to claim 1 , wherein
the oxide semiconductor, the metal films and the second through hole overlap in a plan view.
6. The display device according to claim 3 , wherein
the oxide semiconductor and the second through hole do not overlap each other in a plan view.
7. The display device according to claim 1 , wherein
the channel has a channel width, and
a width of the second through hole in the channel width direction is smaller than a width of the metal films in the channel width direction.
8. The display device according to claim 1 , wherein
the first TFT is a top gate type TFT; a light shielding film of the second TFT is formed simultaneously with the gate electrode of the first TFT.
9. The display device according to claim 1 , wherein
the first TFT is a bottom gate type TFT; a gate electrode of the second TFT is formed simultaneously with the gate electrode of the first TFT.
10. The display device according to claim 1 , wherein
the second TFT is formed in a display area.
11. The display device according to claim 1 , wherein
the first TFT is formed in a peripheral circuit area that is set at a periphery of the display area.
12. The display device according to claim 1 , wherein
the metal films are formed by either one of Ti, Mo, W or Cr or alloys of those metals.
13. The display device according to claim 1 , wherein
the display device is a liquid crystal display device.
14. The display device according to claim 1 , wherein
the display device is an organic EL display device.