Metal-contact-free photodetector
A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has responsivity of 1.24 A/W, corresponding to 99.2% quantum efficiency. Dark current is 40 nA at −4 V reverse bias. 3-dB bandwidth is 30 GHz.
1. A photodetector, comprising:
a substrate;
a device layer, including a waveguide, on a surface of the substrate;
a first doped semiconductor contact in the device layer;
a second doped semiconductor contact in the device layer;
a semiconductor body, in electrical contact with the first doped semiconductor contact and the second doped semiconductor contact, the semiconductor body capable of generating electrical signals by absorbing electromagnetic radiation;
a first metal terminal, in electrical communication with said first doped semiconductor contact; and
a second metal terminal, in electrical communication with said second doped semiconductor contact;
wherein the first and second metal terminals are configured to provide the electrical signals to external circuitry;
wherein the first doped semiconductor contact comprising a first portion underneath the semiconductor body, a second portion underneath the first metal terminal, and a connecting slab extending in the device layer between the first and second portions; and
wherein the second doped semiconductor contact comprising a first portion underneath the semiconductor body, a second portion underneath the second metal terminal, and a connecting slab extending in the device layer between the first and second portions.
2. The photodetector according to claim 1 , wherein the connecting slab of at least one of the first and second doped semiconductor contacts comprises a higher doping level than the respective first portion.
3. The photodetector according to claim 1 , wherein the connecting slab of at least one of the first and second doped semiconductor contacts comprises a doping level intermediate the respective first and second portions.
4. The photodetector according to claim 1 , wherein sheet resistance of the second portion of at least one of the first and second doped semiconductor contacts is an order of magnitude smaller than that of the respective connecting slab.
5. The photodetector according to claim 1 , wherein at least one of said first doped semiconductor contact and said second doped semiconductor contact comprises a doped silicon contact.
6. The photodetector according to claim 1 , wherein the semiconductor body comprises germanium.
7. The photodetector according to claim 1 , wherein the semiconductor body comprises intrinsic germanium.
8. The photodetector according to claim 1 , wherein said first doped semiconductor contact comprises a p-type contact; and wherein said second doped semiconductor contact comprises an n-type contact.
9. The photodetector according to claim 1 , wherein said semiconductor body comprises a plurality of facets providing a non-planar faceted shape.
10. The photodetector according to claim 9 , wherein said semiconductor body comprises a triangular cross section.
11. The photodetector according to claim 10 , wherein one of the facets is oriented at an angle between 15° and 75° to an upper surface of the substrate.
12. A method of fabricating a semiconductor photodetector, comprising:
patterning an device layer of a semiconductor wafer by lithography;
etching the device layer to create waveguide portions and contact portions on a substrate;
doping the contact portions by implantation;
annealing the contact portions to form a p-type contact and an n-type contact, each contact comprising first and second portions, and a connecting slab extending between the first and second portions;
performing epitaxial deposition to provide a semiconductor body in contact with the first portion of the n-type contact and the first portion of the p-type contact; and
applying metallization to form first and second contact terminals in electrical communication with the second portion of the p-type contact and the second portion of the n-type contact, respectively, but lacking direct contact with the semiconductor body.
13. The method according to claim 12 , wherein the doping step comprising doping the connecting slab with a higher doping level than the first portion.
14. The method according to claim 12 , wherein the doping step comprises doping the connecting slab to a level intermediate the first and second portions.
15. The method according to claim 12 , wherein the semiconductor body comprises intrinsic germanium.
16. The method according to claim 12 , wherein said epitaxial deposition step comprises forming a plurality of facets providing a non-planar faceted shape.
17. The method according to claim 16 , wherein the epitaxial deposition step includes mechanically or chemical-mechanical polishing the semiconductor body.
18. The method according to claim 16 , wherein the non-planar faceted shape comprises a triangular cross section.
19. The method according to claim 18 , wherein said epitaxial deposition step comprises forming one of the facets to be oriented at an angle between 15° and 75° to an upper surface of the substrate.