Simulation-assisted wafer rework determination
Aspects of the disclosed technology relate to techniques for using hotspot simulation to make wafer rework decisions. Metrology data of photoresist patterns created based on a layout design for a circuit design by a photolithographic processing step are received during a lithographic process. Hotspots of interest are selected based on comparing the metrology data with simulated metrology data associated with hotspots. The simulated metrology data and information of the hotspots are generated by performing lithographic simulation on the layout design before the lithographic process and stored in a library of potential hotspots. Lithography simulation is performed on the selected hotspots of interest using process conditions of the photolithographic processing step to generate simulated hotspot data. The simulated hotspot data are analyzed to determine whether rework of the one or more wafers or a wafer lot to which the one or more wafers belong is needed.
1. A method, executed by at least one processor of a computer, comprising:
receiving metrology data of photoresist patterns on one or more wafers, the metrology data comprising values of critical dimension data, overlay error data or both, the photoresist patterns being created based on a layout design for a circuit design by a photolithographic processing step during a lithographic process;
selecting hotspots of interest based on comparing the metrology data with simulated metrology data associated with hotspots, wherein the simulated metrology data and information of the hotspots are generated by performing lithographic simulation on the layout design before the lithographic process and stored in a non-transitory computer-readable medium;
performing lithography simulation on the hotspots of interest for the one or more wafers using process conditions of the photolithographic processing step to generate simulated hotspot data; and
analyzing the simulated hotspot data to determine whether rework of the one or more wafers or a wafer lot to which the one or more wafers belong is needed.
2. The method recited in claim 1 , further comprising:
performing a next processing step on the one or more wafers or the wafer lot if the rework is not needed; and
removing the photoresist patterns and performing the photolithographic processing step on the one or more wafers or the wafer lot if the rework is needed.
3. The method recited in claim 1 , wherein the process conditions comprise focus, dose, mask bias, misalignment, or any combination thereof.
4. The method recited in claim 1 , wherein the analyzing comprises:
deriving defect-related data in the simulated hotspot data; and
comparing the defect-related data with predetermined threshold values.
5. The method recited in claim 4 , wherein the defect-related data comprise minimum spacing values for bridge-type hotspots, minimum overlapping area values for overlay-type hotspots, or both.
6. The method recited in claim 1 , wherein the information of the hotspots comprises location information of the hotspots and information of failure mechanism associated with the hotspots.
7. One or more non-transitory computer-readable media storing computer-executable instructions for causing one or more processors to perform a method, the method comprising:
receiving metrology data of photoresist patterns on one or more wafers, the metrology data comprising values of critical dimension data, overlay error data or both, the photoresist patterns being created based on a layout design for a circuit design by a photolithographic processing step during a lithographic process;
selecting hotspots of interest based on comparing the metrology data with simulated metrology data associated with hotspots, wherein the simulated metrology data and information of the hotspots are generated by performing lithographic simulation on the layout design before the lithographic process and stored in a non-transitory computer-readable medium;
performing lithography simulation on the hotspots of interest for the one or more wafers using process conditions of the photolithographic processing step to generate simulated hotspot data; and
analyzing the simulated hotspot data to determine whether rework of the one or more wafers or a wafer lot to which the one or more wafers belong is needed.
8. The one or more non-transitory computer-readable media recited in claim 7 , wherein the method further comprises:
performing a next processing step on the one or more wafers or the wafer lot if the rework is not needed; and
removing the photoresist patterns and performing the photolithographic processing step on the one or more wafers or the wafer lot if the rework is needed.
9. The one or more non-transitory computer-readable media recited in claim 7 , wherein the process conditions comprise focus, dose, mask bias, misalignment, or any combination thereof.
10. The one or more non-transitory computer-readable media recited in claim 7 , wherein the analyzing comprises:
deriving defect-related data in the simulated hotspot data; and
comparing the defect-related data with predetermined threshold values.
11. The one or more non-transitory computer-readable media recited in claim 10 , wherein the defect-related data comprise minimum spacing values for bridge-type hotspots, minimum overlapping area values for overlay-type hotspots, or both.
12. The one or more non-transitory computer-readable media recited in claim 7 , wherein the information of the hotspots comprises location information of the hotspots and information of failure mechanism associated with the hotspots.
13. A system, comprising:
one or more processors, the one or more processors programmed to perform a method, the method comprising:
receiving metrology data of photoresist patterns on one or more wafers, the metrology data comprising values of critical dimension data, overlay error data or both, the photoresist patterns being created based on a layout design for a circuit design by a photolithographic processing step during a lithographic process;
selecting hotspots of interest based on comparing the metrology data with simulated metrology data associated with hotspots, wherein the simulated metrology data and information of the hotspots are generated by performing lithographic simulation on the layout design before the lithographic process and stored in a non-transitory computer-readable medium;
performing lithography simulation on the hotspots of interest for the one or more wafers using process conditions of the photolithographic processing step to generate simulated hotspot data; and
analyzing the simulated hotspot data to determine whether rework of the one or more wafers or a wafer lot to which the one or more wafers belong is needed.
14. The system recited in claim 13 , wherein the analyzing comprises:
deriving defect-related data in the simulated hotspot data; and
comparing the defect-related data with predetermined threshold values.
15. The system recited in claim 14 , wherein the defect-related data comprise minimum spacing values for bridge-type hotspots, minimum overlapping area values for overlay-type hotspots, or both.
16. The system recited in claim 13 , wherein the process conditions comprise focus, dose, mask bias, misalignment, or any combination thereof.
17. The system recited in claim 13 , wherein the information of the hotspots comprises location information of the hotspots and information of failure mechanism associated with the hotspots.