Single stage ramped power amplifiers
View Patent ↗Single stage ramped power amplifiers in accordance with embodiments of the invention are disclosed. In one embodiment, a single stage ramped power amplifier includes a RF transceiver, a ramp voltage, a power supply, and an output circuit, wherein the ramp voltage is coupled to a resistor that is coupled to a first inductor, the power supply is coupled to a second inductor, the RF transceiver is coupled to the second inductor and a first capacitor, the first capacitor is coupled to a PIN diode, the PIN diode is coupled to the first inductor and a second capacitor, the second capacitor is coupled to a first transistor, the first transistor is coupled to a third capacitor, the third capacitor is coupled to a third inductor, the third inductor is coupled to a second transistor, and the second transistor is coupled to the output circuit.
1. A single stage ramped power amplifier, comprising:
a RF transceiver;
a ramp voltage;
a power supply; and
an output circuit;
wherein:
the ramp voltage is coupled to a resistor that is coupled to a first inductor;
the power supply is coupled to a second inductor;
the RF transceiver is coupled to the second inductor and a first capacitor;
the first capacitor is coupled to a PIN diode;
the PIN diode is coupled to the first inductor and a second capacitor;
the second capacitor is coupled to a first transistor;
the first transistor is coupled to a third capacitor;
the third capacitor is coupled to a third inductor;
the third inductor is coupled to a second transistor; and
the second transistor is coupled to the output circuit.
2. The single stage ramped power amplifier of claim 1 , wherein the single stage ramped power amplifier and the output circuit comprise a Class E amplifier.
3. The single stage ramped power amplifier of claim 1 , wherein the RF transceiver is implemented using an integrated narrowband RF transceiver.
4. The single stage ramped power amplifier of claim 1 , wherein the power supply provides 2.5V.
5. The single stage ramped power amplifier of claim 1 , wherein the PIN diode is forward biased.
6. The single stage ramped power amplifier of claim 1 , wherein the PIN diode is reverse biased.
7. The single stage ramped power amplifier of claim 1 , wherein the PIN diode comprises a package of a plurality of PIN diodes.
8. The single stage ramped power amplifier of claim 7 , wherein the package of PIN diodes comprises four PIN diodes.
9. The single stage ramped power amplifier of claim 1 , wherein the second transistor comprises a metal-oxide-semiconductor field-effect transistor.
10. The single stage ramped power amplifier of claim 1 , wherein the RF transceiver provides an RF signal at 173 MHz.
11. The single stage ramped power amplifier of claim 1 , wherein the RF transceiver provides an RF signal at a frequency selected from the group consisting of 850 MHz, 900 MHz, 1800 MHz, and 1900 MHz.
12. The single stage ramped power amplifier of claim 1 , wherein the RF transceiver provides an RF signal at a frequency selected from the group consisting of 700 MHz, 850 MHz, 1700 MHz, 1900 MHz, and 2100 MHz.
13. The single stage ramped power amplifier of claim 1 , wherein the RF transceiver provides an RF signal at a frequency selected from the group consisting of 700 MHz, 850 MHz, 1700 MHz, 1800 MHz, 1900 MHz, 2100 MHz, 2300 MHz, and 2500 MHz.
14. The single stage ramped power amplifier of claim 1 , wherein the output circuit comprises a matching circuit and a low pass filter.
15. The single stage ramped power amplifier of claim 14 , wherein the low pass filter is coupled to an antenna circuit.
16. The single stage ramped power amplifier of claim 1 , wherein the second capacitor is coupled to a fourth inductor.