Light-emitting structure
View Patent ↗A light-emitting structure includes an epitaxial structure including a plurality of trenches; a conductive connecting layer, disposed under the epitaxial structure; a first isolation layer; a crossover metal layer, disposed under the first isolation layer and including a plurality of protruding portions protruding into the epitaxial structure through the plurality of trenches; a second isolation layer, disposed under the crossover metal layer; a bonding layer disposed under the second isolation layer; a substrate, disposed under the bonding layer; and an electrode, electrically connected to the conductive connecting layer and disposed adjacent to the epitaxial structure in a cross-sectional view.
1. A light-emitting structure comprising:
an epitaxial structure comprising a plurality of trenches;
a conductive connecting layer, disposed under the epitaxial structure;
a first isolation layer;
a crossover metal layer, disposed under the first isolation layer and comprising a plurality of protruding portions protruding into the epitaxial structure through the plurality of trenches;
a second isolation layer, disposed under the crossover metal layer;
a bonding layer disposed under the second isolation layer;
a substrate, disposed under the bonding layer; and
an electrode, electrically connected to the conductive connecting layer and disposed adjacent to the epitaxial structure in a cross-sectional view.
2. The light-emitting structure of claim 1 , wherein the epitaxial structure comprises:
a first conductive semiconductor layer;
an active layer, disposed under the first conductive semiconductor layer, and
a second conductive semiconductor layer, disposed under the active layer.
3. The light-emitting structure of claim 2 , wherein the plurality of trenches extends from the second conductive semiconductor layer to the first conductive semiconductor layer and is devoid of passing through the epitaxial structure.
4. The light-emitting structure of claim 3 , wherein the plurality of protruding portions contacts the first conductive semiconductor layer through the plurality of trenches.
5. The light-emitting structure of claim 1 , wherein the first isolation layer comprises a portion disposed on a side wall of each of the plurality of trenches.
6. The light-emitting structure of claim 5 , wherein the first isolation layer comprises another portion disposed under the conductive connecting layer.
7. The light-emitting structure of claim 1 , wherein the electrode is not covered by the epitaxial structure.
8. The light-emitting structure of claim 1 , wherein the conductive connecting layer surrounds the plurality of protruding portions.
9. The light-emitting structure of claim 1 , wherein a top surface of the epitaxial structure is roughened.
10. The light-emitting structure of claim 1 , wherein a width of the conductive connecting layer is substantially equal to that of the light-emitting structure in a top view.
11. The light-emitting structure of claim 1 , wherein in a top view, the conductive connecting layer comprising a plurality of openings substantially corresponding to the plurality of trenches.
12. The light-emitting structure of claim 1 , wherein the epitaxial structure comprises a plurality of epitaxial units electrically connecting each other in a cross-sectional view.
13. The light-emitting structure of claim 1 , further comprising a conductive layer formed between the epitaxial structure and the substrate.
14. The light-emitting structure of claim 13 , wherein a material of the conductive layer comprises silver or aluminum.
15. The light-emitting structure of claim 1 , wherein a material of the conductive connecting layer comprises indium tin oxide, cadmium tin oxide, antimony tin oxide, indium zinc oxide, aluminum zinc oxide, or zinc tin oxide.