MEMS isolation structures
View Patent ↗A device may comprise a substrate formed of a first semiconductor material and a trench formed in the substrate. A second semiconductor material may be formed in the trench. The second semiconductor material may have first and second portions that are isolated with respect to one another and that are isolated with respect to the first semiconductor material.
1. A device comprising:
a substrate having a first outer surface and a second outer surface opposite said first outer surface;
a channel formed in said substrate, said channel having a first opening defined by said first outer surface of said substrate;
circuitry material disposed in said channel; and
a gap formed in said circuitry material in said channel, said gap separating said circuitry material into a first region and a second region; and wherein
said first region of said circuitry material is mechanically isolated from said second region of said circuitry material such that said first region of said circuitry material is moveable relative to said second region of said circuitry material;
said channel includes a second opening defined by said second outer surface of said substrate;
said substrate includes a first region and a second region;
said first region of said substrate defines a portion of said first outer surface of said substrate and a portion of said second outer surface of said substrate;
said second region of said substrate defines a portion of said first outer surface of said substrate and a portion of said second outer surface of said substrate;
said channel is disposed between said first region of said substrate and said second region of said substrate; and
said first region of said substrate and said second region of said substrate are mechanically isolated from one another; and
said first region of said substrate is movable with respect to said second region of said substrate.
2. The device of claim 1 , wherein at least one of said first region of said circuitry material and said second region of said circuitry material extends over said first outer surface of said substrate.
3. The device of claim 1 , wherein said first region of said circuitry material and said second region of said circuitry material are electrically isolated from one another.
4. The device of claim 1 , wherein said first region of said circuitry material is mechanically isolated from at least a portion of said substrate.
5. The device of claim 1 , wherein said second opening of said channel is formed by thinning said substrate from said second outer surface.
6. The device of claim 1 , wherein:
said first region of said circuitry material is mechanically isolated from said first region of said substrate and said second region of said substrate; and
said second region of said circuitry material is mechanically isolated from said first region of said substrate and said second region of said substrate.
7. The device of claim 1 , wherein:
said substrate is a MEMS actuator substrate;
said first region of said circuitry material comprises a moving structure of said MEMS actuator substrate;
said second region of said circuitry material comprises a stationary structure of said MEMS actuator substrate; and
said gap facilitates mechanical and electrical separation between said moving structure and said stationary structure.
8. The device of claim 1 , further comprising an insulating material disposed between said first region of said circuitry material and said substrate and between said second region of said circuitry material and said substrate.